Abstract: Disclosed is a flat panel display that prevents image quality degradation by preventing the current leakage to the organic light emitting diode. The flat panel display comprises: a first switching element whose control electrode is electrically coupled to a scan line, being electrically coupled between a data line and a first voltage line; a second switching element whose control electrode is electrically coupled to the scan line, being electrically coupled between the first switching element and first voltage line; a capacitive element whose first electrode is electrically coupled between the first and second switching elements; a drive transistor whose control electrode is electrically coupled to the second switching element, being electrically coupled between the first voltage line and a second voltage line; and an organic light emitting diode electrically coupled between the drive transistor and second voltage line.

Abstract: A method for manufacturing a nitride-based semiconductor device includes: preparing a substrate; forming a buffer layer on the substrate, the buffer layer preventing dislocation with the substrate; forming a spacer on the buffer layer; forming a barrier layer on the spacer, the barrier layer forming a hetero-structure with the spacer; forming a protecting layer on the barrier layer; and forming an HfO2 layer the protecting layer through RF sputtering.

Abstract: A liquid crystal display panel includes a touch sensor and the touch sensor includes a plurality of x-axis read-out lines, a plurality of y-axis read-out lines crossing the x-axis read-out lines, a plurality of sensor units provided in a plurality of regions defined by the x-axis read-out lines and the y-axis read-out lines. Each sensor unit comprises a reset unit that outputs a sampling voltage based on a reset voltage, a capacitance detector that generates a modified sampling voltage from the sampling voltage based on a variation of a cell gap of the display panel caused by a touch of the display panel, a first output unit that changes an electric potential of a corresponding x-axis read-out line in response to the modified sampling voltage and a second output unit that changes an electric potential of a corresponding y-axis read-out line in response to the modified sampling voltage.

Abstract: A method for manufacturing a nitride-based semiconductor device includes: preparing a substrate; forming a buffer layer on the substrate, the buffer layer preventing dislocation with the substrate; forming a spacer on the buffer layer; forming a barrier layer on the spacer, the barrier layer forming a hetero-structure with the spacer; forming a protecting layer on the barrier layer; and forming an HfO2 layer the protecting layer through RF sputtering.

Abstract: A display device with a touch screen includes: first sensing units, each first sensing unit comprising first optical sensors connected in series, each first sensing unit comprising a first terminal for receiving a first voltage, each first sensing unit extending in a first direction; second sensing units, each second sensing unit comprising second optical sensors connected in series, each second sensing unit comprising a first terminal for receiving a second voltage, each second sensing unit extending in a second direction transverse to the first direction; a reset unit for applying a reset voltage to a second terminal of each of the first and second sensing units; and a read-out unit for sensing a touch position based on voltage changes at the second terminals of the first and second sensing units.

Abstract: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.

Abstract: A display device has a plurality of pixels, where each pixel includes a light emitting element, a capacitor, a driving transistor having a control terminal, an input terminal, and an output terminal and supplying a driving current to the light emitting element to emit light, a first switching unit diode-connecting the driving transistor and supplying a data voltage to the capacitor in response to a scanning signal, and a second switching unit supplying a driving voltage to the driving transistor and connecting the capacitor to the driving transistor in response to the emission signal, wherein the capacitor is connected to the driving transistor through the first switching unit, stores a control voltage depending on the data voltage and the threshold voltage of the driving transistor, and is connected to the driving transistor through the second switching unit to supply the control voltage to the driving transistor.

Abstract: A thin film transistor, which has a first passivation layer and a second passivation layer to maintain high reliability while preventing hydrogen from being induced to a semiconductor layer, and a method for fabricating the thin film transistor are provided. The method includes providing a substrate including an insulation substrate, forming a gate electrode on the substrate, forming a gate insulation layer on the substrate and the gate electrode, forming a semiconductor layer on the gate insulation layer, forming source/drain electrodes on the semiconductor layer to expose a portion of a top portion of the semiconductor layer, forming a first passivation layer to cover exposed top portions of the gate insulation layer, the semiconductor layer and the source/drain electrodes, and forming a second passivation layer on the first passivation layer, wherein the forming of the second passivation layer comprises performing deposition at a higher temperature than the forming of the first passivation layer.

Abstract: Provided are a thin film transistor having a passivation layer capable of annealing at low temperature and having stable electric characteristics, and a flexible display using the same. In one embodiment, the thin film transistor includes a passivation layer formed on an active layer, the passivation layer including a fluoropolymer.

Abstract: The present invention provides a novel structure of picture elements in current programming-type semiconductor devices, and in particular, the structure of picture elements of an active matrix organic light emitting diode (OLED) display. The device makes a self-compensation for OLED current deviations due to the deterioration in threshold voltage and uneven electric characteristic in thin film transistors. The invention also provides a method for driving a data driver capable of compensating for the uneven electric characteristic of thin film transistors in the driver for driving picture elements in the current programming-type active matrix OLED display device.

Abstract: A touch sensor configured to be disposed in a liquid crystal display panel includes a plurality of x-axis read-out lines crossing and insulated from a plurality of y-axis read-out lines and a plurality of sensor units. Each sensor unit includes a reset unit, a capacitance detector, a first output unit, and a second output unit. The reset unit outputs a first reset signal based on a first control signal. The capacitance detector changes the first reset signal based on a variation of a cell gap of the liquid crystal display panel caused by a touch event. The first output unit changes an electric potential of a corresponding x-axis read-out line in response to the first reset signal changed in the capacitance detector. The second output unit changes an electric potential of a corresponding y-axis read-out line in response to the first reset signal changed in the capacitance detector.

Abstract: Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate.

Abstract: A display device includes a light emitting diode, and first and second driving transistors connected between a driving voltage and the light emitting diode to supply driving electric current to the light emitting diode. A control voltage or control voltages differentiated in polarity from each other is/are applied to control terminals of the first and the second driving transistors. The first driving transistor has a control electrode located below a semiconductor layer of the light emitting diode while the second driving transistor has a control electrode located over the semiconductor layer. Two driving transistors are formed at each pixel, and an area occupied thereof within the pixel is reduced. Control voltages differentiated in polarity from each other are applied to the respective driving transistors, substantially preventing deterioration of the driving transistors.

Abstract: Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist pattern, and patterning the semiconductor layer and the insulating layer into a channel layer and an etch stop layer, respectively, thereby simplifying the manufacturing process of the thin film transistor.

Abstract: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.

Abstract: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.

Abstract: Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask.

Abstract: An organic light emitting display that can minimize degradation of a drive transistor comprising a first switching element whose control electrode is electrically coupled to a scan line, being electrically coupled between a data line and a first voltage line for transmitting a data signal; a drive transistor whose control electrode is electrically coupled to the first switching element, being electrically coupled between the first and second voltage lines; an organic light emitting diode electrically coupled to the drive transistor, displaying an image by a current supplied through the drive transistor; a first capacitive element electrically coupled between the control electrode of the drive transistor and the first switching element; a second capacitive element electrically coupled between the first capacitive element and the second voltage line; a second switching element electrically coupled between the first voltage line and the control electrode of the drive transistor; a third switching element electri

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract: A thin film transistor, which has a first passivation layer and a second passivation layer to maintain high reliability while preventing hydrogen from being induced to a semiconductor layer, and a method for fabricating the thin film transistor are provided. The method includes providing a substrate including an insulation substrate, forming a gate electrode on the substrate, forming a gate insulation layer on the substrate and the gate electrode, forming a semiconductor layer on the gate insulation layer, forming source/drain electrodes on the semiconductor layer to expose a portion of a top portion of the semiconductor layer, forming a first passivation layer to cover exposed top portions of the gate insulation layer, the semiconductor layer and the source/drain electrodes, and forming a second passivation layer on the first passivation layer, wherein the forming of the second passivation layer comprises performing deposition at a higher temperature than the forming of the first passivation layer.