Abstract: A tunneling method includes: managing a session entry table for storing information used for multicasting data transmitted from a first network having a first address format to a second network having a second address format different from the first address format; and tunneling multicasting data, generated by the first network, to the second network in accordance with the session entry table.

Abstract: The present invention relates to a method of manufacturing a flash memory device using a shallow trench isolation process and a self-aligned source etch process. A plurality of isolating cell isolation films are formed by means of the shallow trench isolation process so that an active region is defined between sources and sources in each of unit cells. Thus, trenches are not formed in a common source line between the isolating cell isolation films and portions of the common source line between the isolating cell isolation films are overlapped with word lines like in the sources of the unit cells. Thus, an electrical characteristic of the common source line can be uniformly kept. The productivity and yield of the device can be improved due to simplified process. Also, the width of the common source line is reduced and the level of integration in the semiconductor device can be increased.

Abstract: The present invention relates to a method of manufacturing a flash memory device using a shallow trench isolation process and a self-aligned source etch process. A plurality of isolating cell isolation films are formed by means of the shallow trench isolation process so that an active region is defined between sources and sources in each of unit cells. Thus, trenches are not formed in a common source line between the isolating cell isolation films and portions of the common source line between the isolating cell isolation films are overlapped with word lines like in the sources of the unit cells. Thus, an electrical characteristic of the common source line can be uniformly kept. The productivity and yield of the device can be improved due to simplified process. Also, the width of the common source line is reduced and the level of integration in the semiconductor device can be increased.

Abstract: The invention relates to a flash EEPROM cell and method of manufacturing the same.

Abstract: The invention relates to a flash EEPROM cell and method of manufacturing the same.

Abstract: A vehicle levelling device includes a vehicle body with a rear section and a rear axle carried under the rear section of the vehicle body to provide support therefor. A support yoke is hingedly mounted to the vehicle body for pivotal movement about a transverse axis in a vertical plane. The support yoke holds the rear axle in a manner that the rear axle can rotate about a longitudinal axis. A hydraulic cylinder is attached to the vehicle body at a first end and to the support yoke at a second end so that it can be operated to lower or raise the rear section of the vehicle body with respect to the rear axle to thereby bring a tilted forklift into a horizontal position. Operation of the hydraulic cylinder is controlled by an electronic controller which in turn receives a tilt signal from a tilt sensor.