Abstract: Described herein is a chamber component having a body comprising one or more aluminum alloy compositions. A surface of the chamber component has an aluminum alloy composition comprising aluminum (Al), wherein the Al is included in an amount of about 85 wt % to about 98 wt %, based on total weight of the alloy composition, and magnesium (Mg), wherein the Mg is included in an amount of about 1 wt % to about 5 wt %, based on total weight of the alloy composition. The aluminum alloy composition further includes one or more additional chemical elements that form an equiaxed grain structure of an aluminum matrix of the alloy composition.

Abstract: A planter suitable for block seeds that relates to the technical field of agricultural seeding machinery is disclosed. The planter includes a frame, a fertilizing tank, a fertilizing box, a seeding mechanism, a control mechanism, a seed box, a ridging mechanism, land wheels, a seeding furrower, a fertilizing furrower, a seed-clearing mechanism, and a replanting mechanism. The fertilizing tank, the fertilizing furrower, the fertilizing box, the seeding furrower, the seeding mechanism, the land wheels, the control mechanism, the seed box, and the ridging mechanism are mounted in turn from one end to the other end of the frame. A photoelectric sensor of an active infrared intrusion detector is adopted to dynamically monitor the presence of the seed potatoes on a seed-discharge spoon in a conveying process. Seeds are replanted with the control mechanism when the seeds are sowed with an empty spoon.

Abstract: Methods and apparatus provide in-situ pressure sensors for apparatus used in semiconductor manufacturing processes. In some embodiments, the apparatus may comprise a showerhead body, a first gas channel of the showerhead body, a second gas channel of the showerhead body, one or more first gas pressure sensors positioned on a surface of the first gas channel, and one or more second gas pressure sensors positioned on a surface of the second gas channel. The apparatus may be formed by additive manufacturing including the pressure sensors and electrical connections to the pressure sensors. In some embodiments, a controller may be utilized to control semiconductor processes based on the pressure readings from the in-situ pressure sensors.

Abstract: A method of redialing with user equipment (UE) under handover limitation is disclosed. The method includes establishing a Voice over Wi-Fi (VoWiFi) call between the UE and a network, ending the VoWiFi call by the UE if a signal quality of the VoWiFi call is lower than a first threshold and a quality of another Radio Access Technology (RAT) is higher than a second threshold for calling, and sending a Session Initiation Protocol (SIP) INVITE message with the another RAT, from the UE to the network, to initiate a redialing after ending the VoWiFi call.

Abstract: The invention provides a chip carrier, a chip testing module and a chip handling module. The chip carrier for carrying a plurality of chips comprises a main body with an upper surface and a lower surface. The main body has a plurality of air guide holes, and two ends of each air guide hole are respectively exposed on the upper surface and the lower surface. A part of the air guide holes are defined as a first group, and the air guide holes of the first group are connected. The main body is made of conductive material.

Abstract: Disclosed in the present application are a non-volatile ferroelectric capacitor and a display driving circuit. The non-volatile ferroelectric capacitor comprises: a ferroelectric capacitor, which is formed on the surface of a substrate; and a first channel layer and a second channel layer, which are respectively formed on the surface of the substrate. The ferroelectric capacitor comprises a bottom electrode, a ferroelectric thin film and a top electrode, which are sequentially arranged in a stacked manner; the first channel layer is in contact with the bottom electrode; a dielectric material is formed on the surfaces of the ferroelectric capacitor, the first channel layer and the second channel layer; and a first gate electrode and a second gate electrode are formed on the surface of the dielectric material, such that the structure of the ferroelectric capacitor is obtained.

Abstract: The present invention discloses a hybridoma cell line for secreting monoclonal antibody against rabies virus M protein and application thereof, relates to the field of biotechnology. A classification of the hybridoma cell line is named as hybridoma cell line 4A1, and the hybridoma cell line was deposited on Apr. 1, 2019 in the China Center for Type Culture Collection, Wuhan University, Wuhan, China, with a deposit number CCTCC NO: C201947. The monoclonal antibody prepared by the hybridoma cell line has high titer, good specificity and excellent biological characteristics. The present invention identifies the variant antigen epitope recognized by the RABV M protein, the hybridoma cell line can be used to distinguish Flury strain and other RABV strains, prepare kit for detecting rabies virus RABV, detect RABV infection and differential diagnosis vaccine Flury strain and other RABV strains.

Abstract: A ferroelectric film phase shifter includes a substrate layer; an isolated signal layer located on the substrate layer; first, second and third top transmission line electrodes distributed on the isolated signal layer at intervals; the first and second top transmission line electrodes located at both ends of the isolated signal layer, and the third top transmission line electrode located on a middle region of the isolated signal layer; a bottom transmission line electrode located in the isolated signal layer; an intermediate transmission line structure located in a middle region of the bottom transmission line electrode and adjacent to the third top transmission line electrode; MIM hafnium oxide-based ferroelectric capacitor structures located at two ends of the bottom transmission line electrode; and metal transmission line structures located between each MIM hafnium oxide-based ferroelectric capacitor structure and each of the first top transmission line electrode and the second top transmission line electr

Abstract: A method and an apparatus for integrated circuit testing are provided. The method includes: operating a tester to perform a qualitative testing on devices in the integrated circuit by following electrical addresses of the devices, and to introduce an original verification pattern during the qualitative testing, such that a verification pattern corresponding to the original verification pattern can be converted from a raw data of a result of the qualitative testing; converting the raw data to a test graph presented by physical addresses, by using pre-determined scramble equations; and identifying portions of the verification pattern appeared in the test graph and comparing the portions of the verification pattern with corresponding portions of the original verification pattern by pattern recognition, and correcting the pre-determined scramble equations according to comparison result.

Abstract: A method and an apparatus for integrated circuit testing are provided. The method includes: operating a tester to perform a qualitative testing on devices in the integrated circuit by following electrical addresses of the devices, and to introduce an original verification pattern during the qualitative testing, such that a verification pattern corresponding to the original verification pattern can be converted from a raw data of a result of the qualitative testing; converting the raw data to a test graph presented by physical addresses, by using pre-determined scramble equations; and identifying portions of the verification pattern appeared in the test graph and comparing the portions of the verification pattern with corresponding portions of the original verification pattern by pattern recognition, and correcting the pre-determined scramble equations according to comparison result.

Abstract: A gate-last ferroelectric field effect transistor includes a substrate, isolation regions, a gate structure, a side wall spacer, source and drain regions, a first metal silicide layer and an interlayer dielectric layer which are sequentially arranged from bottom to top; the present disclosure further provides a manufacturing method of a gate-last ferroelectric field effect transistor; according to structural characteristics of the gate-last ferroelectric field effect transistor and crystalline characteristics of a hafnium oxide-based ferroelectric film, a dummy gate is first introduced in a manufacturing process of the gate-last ferroelectric field effect transistor; afterwards, high-temperature annealing is performed to make sure that an unannealed hafnium oxide-based film is crystallized to form a ferroelectric phase; finally the dummy gate is removed and a gate electrode layer is deposited to meet performance requirements of the gate-last ferroelectric field effect transistor; and the gate-last ferroelectr

Abstract: A molecular marker for diagnosing primary biliary cholangitis and a method for detecting same are provided. The anti-human multimer immunoglobulin receptor antibody is adopted as the primary biliary cholangitis diagnosis molecular marker so as to prepare the diagnosis reagent; the human multimer immunoglobulin receptor antibody is remarkably increased in serum of PBC AMA-M2 subtype positive and negative patients, which indicates that in the attack of PBC, the serum anti-human multimer immunoglobulin receptor antibody specifically targets human multimer immunoglobulin receptors on small and medium bile ducts in the liver, thereby causing damage to the small and medium bile ducts.

Abstract: A mainboard device and an update method of the basic input-output system thereof are provided. The mainboard device includes a flash memory, a universal serial bus (USB) port, and a microprocessor. The code of the basic input-output system is stored in the flash memory. The USB port is connected to an external USB device, wherein the external USB device includes a supply power and stores an update code. The microprocessor includes a power-switching device coupled to the system power and the USB port. When the power-switching device detects that the system power does not provide power and the USB port is provided with the supply power, the microprocessor provides power to the flash memory based on the supply power, and the microprocessor accesses the update code of the external USB device to perform an update operation on the code in the flash memory.

Abstract: A CIS has a monolithic transfer gate electrode embedded in the semiconductor substrate. In some embodiments, the transfer gate electrode is below the surface. In some embodiments, the top of the transfer gate electrode is nearly even with or below a bottom of a floating diffusion region. In some embodiments, the transfer gate electrode wraps partially around the area of the floating diffusion region. In some embodiments, the transfer gate electrode wraps entirely around the area of the floating diffusion region. Embedding the transfer gate in the substrate reduces surface crowding and allows a scale reduction. The wrapping of the transfer gate electrode around the area of the floating diffusion region increases the area of the transfer gate channel while limiting the area that is occupied by the transfer gate.

Abstract: A NAND ferroelectric memory cell with a three-dimensional structure and a preparation method thereof are provided, the ferroelectric memory cell comprises: an oxide insulating layer, a channel layer, a channel buffer layer, a ferroelectric layer, and/or a gate buffer layer, and a gate arranged successively from the inside to the outside. In the memory cell of the present disclosure, the buffer layer has the following effects: 1. It can induce the crystallization of ferroelectric film to form ferroelectric phase; 2. It can reduce adverse effects caused by different crystalline characteristics of the channel layer and the ferroelectric layer, improve the quality and uniformity of the deposited film; 3. It can enhance the interface property of the channel layer, reduce leakage current, and enhance endurance of the device. Therefore, the buffer layer can improve the overall storage property and homogeneity of memory cells with a three-dimensional structure.

Abstract: Methods and apparatus for a baking chamber for processing a chamber component are provided herein. In some embodiments, a baking chamber includes: an enclosure defining a first chamber, wherein the first chamber comprises: a first chamber body having a first floor and first sidewalls that couple the first floor to a first lid of the first chamber body to define a first interior volume; a first support disposed in the first interior volume; a first gas line disposed in the first interior volume proximate the first lid; a first showerhead disposed between the first gas line and the first support; a first exhaust coupled to the first floor; and a first heater disposed in the first interior volume between the first support and the first floor; and wherein the enclosure includes a door configured to facilitate transferring the chamber component into and out of the enclosure.

Abstract: A system with sound adjustment capability is provided. The system includes a head-mounted device, a first loudspeaker and a processor. The first loudspeaker is detachable from the head-mounted device. The processor is configured to detect a plurality of positions and a plurality of orientations of the head-mounted device and the first loudspeaker to determine whether the first loudspeaker is detached from the head-mounted device. The processor is further configured to modify a first audio signal by at least one first filter or at least one second filter to generate a filtered first audio signal. The at least one first filter is used when the first loudspeaker is coupled to the head-mounted device, and the at least one second filter is used when the first loudspeaker is detached from the head-mounted device. The filtered first audio signal is configured to drive the first loudspeaker.

Abstract: The present disclosure is directed to a system and method to identify and track parts of a semiconductor processing chamber, as well as the status of the parts, and store status information in a centralized location as status changes over time.

Abstract: This invention discloses an internet-based remote interactive system for sex toys, comprising: an APP server used for storing data of different users and handling different user data requests; a sex toy that can receive signals, in which, the sex toy is configured to produce actions based on the received signals; a wireless mobile device with an APP for sending signals to the sex toy, in which, the APP can send signals to the sex toy to control the sex toy action based on the user-operated virtual control panel, and can also send signals to the sex toy to control the sex toy action based on the control commands received from the APP server.

Abstract: The present invention discloses a vessel collision avoiding system and method based on Artificial Potential Field algorithm, the method comprises the following steps: (S1) obtaining a vessel information, at least one obstacle information and a target information; (S2) establishing an Artificial Potential Field (APF) by the vessel information, the at least one obstacle information and the target information, wherein the Artificial Potential Field comprises an attractive field of the target and a repulsive field of the obstacle; (S3) combining the attractive field and the repulsive field to obtain a first resultant force; (S4) Adding an external force to the Artificial Potential Field based on the vessel information or the obstacle information; (S5) combining the first resultant force and the external force to obtain a second resultant force; and (S6) the vessel sails in the direction of the second resultant force to avoid the obstacle.