Abstract: A semiconductor device includes a first transistor in a first region of a substrate and a second transistor in a second region of the substrate. The first transistor includes multiple first semiconductor patterns; a first gate electrode; a first gate dielectric layer; a first source/drain region; and an inner-insulating spacer. The second transistor includes multiple second semiconductor patterns; a second gate electrode; a second gate dielectric layer; and a second source/drain region. The second gate dielectric layer extends between the second gate electrode and the second source/drain region and is in contact with the second source/drain region. The first source/drain region is not in contact with the first gate dielectric layer.

Abstract: A display panel includes a substrate, light emitting elements in a display area of the substrate, and configured to emit light, an organic encapsulation layer on the light emitting elements, a first dam in a non-display area of the substrate, and organic patterns spaced apart from each other outside the first dam in the non-display area of the substrate, and including a first organic pattern and a second organic pattern adjacent to each other and having a gap therebetween.

Abstract: An apparatus for quantum-based physically unclonable functions is disclosed. The apparatus for quantum-based physically unclonable functions according to an embodiment of the present embodiment comprises a random nanostructure formed on a substrate by hydrothermal synthesis, wherein the random nanostructure emits a laser light of a predetermined pattern through the quantum activity of the random nanostructure.

Abstract: A battery pack assembly for an electrified vehicle includes a top cover, a cooling plate, a bottom plate and a main body assembly. The main body assembly comprises a structural frame support assembly having a front beam, a rear beam, a first side beam and a second side beam. A middle beam provides structural support to the cooling plate. A front support member is disposed at least partially between the cooling plate and the bottom plate. A rear support member is disposed at least partially between the cooling plate and the bottom plate. First structural glue is disposed between the front support member and the cooling plate.

Abstract: A battery pack assembly for an electrified vehicle includes a main body assembly comprising a structural frame support assembly. The structural frame support assembly includes a first floor module support frame, a first floor cooling plate, a second floor module support frame, a second floor cooling plate and a holding pad. The second floor module support frame can support an upper battery housing. The holding pad can be disposed between the second floor module support frame and the second floor cooling plate. The holding pad can have first structural glue disposed thereon between the holding pad and the second floor cooling plate. The holding pad can further have second structural glue disposed between the holding pad and the second floor module support frame. The first and second structural glue inhibits relative movement between the second floor cooling plate, holding pad and second floor module support frame.

Abstract: A battery pack assembly for an electrified vehicle includes a main body assembly comprising a structural frame support assembly including a floor module support frame and a cooling plate. The floor module support frame includes a central body, a first protrusion support and a second protrusion support. The central body has an upper surface that extends along a central body plane. The first protrusion support can be configured along a first edge and have an upper surface that extends along a first support plane that is offset from the central body plane. The second protrusion support can be configured along a second end and have an upper surface that extends along a second support plane that is offset from the central body plane. The first and second protrusion supports can inhibit relative movement between the cooling plate and floor module support frame.

Abstract: The present disclosure relates to a method and a device operating in a wireless communication system. The present disclosure relates to a method, and a device therefor, the method comprising the steps of: transmitting configuration information for direct device-to-device communication to a second device; and receiving a message including a header and a payload from the second device, wherein the header includes an extension flag field including a plurality of bits, and an extension data field corresponding to each of data types identified in the extension flag field, and the transmission period of a message related to the second device is adjusted on the basis of information about the quality of service (QOS) level of the second device included in the header.

Abstract: A display device includes a display panel including a display area in which pixels are placed to display an image, and a non-display area located around the display area; and a cover window including a light blocking area overlapping the non-display area of the display panel in a thickness direction of the display panel, and a through hole penetrating through the light blocking area, wherein the display panel further includes a first power supply line located in the non-display area to apply a first power supply voltage, and wherein the first power supply line does not overlap the through hole in the thickness direction of the display panel.

Abstract: A Soft Vehicle to Everything (V2X) server in a wireless communication system, and including a receiver configured to receive messages from a plurality of user equipments (UEs); a controller configured to determine an assessment risk between a pair of UEs included in the plurality of UEs based on the received messages, and determine at least one primary candidate UE among the pair of UEs to be included in a risk candidate list based on the determined assessment risk between the pair of UEs; and a transmitter configured to transmit the risk candidate list to the plurality of UEs.

Abstract: A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.

Abstract: A hot water returning system according to the present disclosure includes a hot water generator that generates hot water, a hot water line that supplies the hot water to a source of demand, a water returning line that returns the hot water to the hot water generator for preheating the hot water in the hot water line, a pump which pumps the hot water for returning of the hot water, and a processor electrically connected to the pump, and the processor is configured to determine a need for preheating corresponding to whether it is necessary to preheat the hot water and a status for use of hot water corresponding to whether the hot water is supplied to a source of demand, and control the pump based on the need for preheating and the status for use of hot water.

Abstract: Some embodiments relate to an integrated chip structure. The integrated chip structure includes a substrate having a first device region and a second device region. A plurality of first transistor devices are disposed in the first device region and respectively include epitaxial source/drain regions disposed on opposing sides of a first gate structure. The epitaxial source/drain regions have an epitaxial material. A plurality of second transistor devices are disposed in the second device region and respectively include implanted source/drain regions disposed on opposing sides of a second gate structure. A dummy region includes one or more dummy structures. The one or more dummy structures have dummy epitaxial regions including the epitaxial material.

Abstract: The present invention relates to a battery pack that may reduce risks caused by a large amount of gas. In addition, the present invention may provide a battery pack that discharges a gas but prevents internally generated flames from being exposed to the outside. In addition, the present invention may provide an electric device including one or more battery packs.

Abstract: The battery module according to the present disclosure comprises a plurality of battery cells stacked in one direction; a module case accommodating the plurality of battery cells; and a vent positioned on top of the plurality of battery cells, wherein the vent comprises a plurality of partitions forming a plurality of flow channels distinguished from each other.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The a semiconductor structure includes: a substrate; a gate electrode disposed within the substrate; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate electrode adjacent to the plurality of first structures; and an insulating layer between the second protection structure and the gate electrode.

Abstract: A method of a terminal for transmitting channel state information for one or more beams comprises the steps of: determining whether group-based beam reporting is configured based on channel state information (CSI) reporting configuration information; measuring reference signal received power (RSRP) for one or more channel state information reference signals (CSI-RS) received through one or more CSI-RS resources; and transmitting, to a base station, the channel state information including a value in a table configured in advance based on whether the group-based beam reporting is configured and one or more CSI-RS RSRP measurement results obtained by the measurement.

Abstract: Provided are a printed circuit board and a method for manufacturing the same, the printed circuit board including: an insulating member; a first pad disposed in the insulating member; a plurality of first vias respectively disposed on a lower side of the first pad in the insulating member and connected to the first pad; and a second via disposed on an upper side of the first pad in the insulating member and connected to the first pad.

Abstract: Integrated circuit devices may include an upper transistor structure on a substrate, the upper transistor structure comprising an upper channel region and an upper gate electrode on the upper channel region; a lower transistor structure between the substrate and the upper transistor structure, the lower transistor structure comprising a lower channel region and a lower gate electrode on the lower channel region; and an intergate contact between the lower gate electrode and the upper gate electrode. The lower gate electrode may be electrically connected to the upper gate electrode through the intergate contact, and a portion of a lower surface of the intergate contact may protrude beyond a side surface of the lower gate electrode.

Abstract: An integrated circuit device comprising: an upper transistor structure on a substrate, the upper transistor structure comprising a pair of upper source/drain regions spaced apart from each other in a first horizontal direction and an upper gate electrode between the pair of upper source/drain regions; a lower transistor structure between the substrate and the upper transistor structure, the lower transistor structure comprising a lower gate electrode; an upper insulating layer on the lower transistor structure, wherein the upper gate electrode is in the upper insulating layer; and a lower gate contact extending through the upper insulating layer and contacting the lower gate electrode, a center of the upper gate electrode in a second horizontal direction and a center of the lower gate electrode in the second horizontal direction are offset from each other in the second horizontal direction, and the second horizontal direction is perpendicular to the first horizontal direction.

Abstract: The present disclosure relates to a method for manufacturing a positive electrode for a lithium-sulfur battery including: (1) mixing a sulfur-carbon composite and a binder to prepare a slurry for a positive electrode active material; (2) applying the slurry for the positive electrode active material to one surface of the current collector; (3) a first drying step of drying the current collector, to which the slurry is applied, using hot air and medium wave infrared radiation; and (4) a second drying step of drying the current collector, to which the slurry is applied, using a laser heat source after the first drying step (3).