Abstract: The apparatus for supplying hot water comprises: at least one processor; a heat exchanger connected to the at least one processor, and configured to receive tap water through a tap water inflow pipe, heat the supplied tap water by means of heat exchange to thereby generate hot water, and discharge the generated hot water through a hot water supply pipe; a burner configured to directly or indirectly provide heat required to generate the hot water; a mixing valve connected to the at least one processor and installed on a mixing pipe connecting the tap water inflow pipe and the hot water supply pipe, and configured to mix the tap water with the hot water discharged from the heat exchanger and flowing through the hot water supply pipe; and a memory connected to the at least one processor and configured to store instructions.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.

Abstract: A semiconductor device having a gate-all-around structure includes a first fin pattern and a second fin pattern separated by a first trench and extending in a first direction, a first nanosheet on the first fin pattern, a second nanosheet on the second fin pattern, a first fin liner extending along at least a portion of a sidewall and a bottom surface of the first trench, a first field insulation layer disposed on the first fin liner and filling a portion of the first trench, and a first gate structure overlapping an end portion of the first fin pattern and including a first gate spacer. A height from the bottom surface of the first trench to a lower surface of the first gate spacer is greater than a height from the bottom surface of the first trench to an upper surface of the first field insulation layer.

Abstract: A computer-implemented system and a method for automatic electronic order creation are disclosed. The system and method may be configured to: receive a digitized document comprising embedded metadata related to contents of the digitized document; analyze the embedded metadata to extract a boundary parameter; generate a unique reference identifier associated with the digitized document and the boundary parameter; receive a first input data setting one or more target measurements for one or more predefined periods of time, wherein a sum of the one or more target measurements is less than or equal to the boundary parameter; receive a second input data setting configuration data for achieving the one or more target measurements; and generate an electronic order based on the configuration data.

Abstract: Disclosed is a method for manufacturing high-carbon bearing steel, which include: heating a billet at a temperature of about 950 to 1,050° C. for about 70 to 120 minutes, rolling the billet to manufacture a wire rod, winding the wire rod to manufacture a wire rod coil, cooling the wire rod coil, and subsequently heat treating the wire rod coil for spheroidizing and carbonitriding, respectively. The bearing steel may include an amount of about 0.9 to 1.3 wt % of carbon (C), an amount of about 1.1 to 1.6 wt % of silicon (Si), an amount of about 1.0 to 1.5 wt % of manganese (Mn), an amount of about 1.5 to 1.9 wt % of chromium (Cr), an amount of about 0.2 to 0.6 wt % of nickel (Ni), an amount of about 0.1 to 0.3 wt % of molybdenum (Mo), and the balance iron (Fe) based on the total weight thereof.

Abstract: The present disclosure is directed to providing to a smart window system capable of controlling a state of a display element (e.g., at least one of transparency, color, pattern, gradation degree, and displayed information) through various kinds of input devices and a control method thereof. In accordance with one aspect of the present disclosure, a smart window system may include a display element; an input device configured to receive a control command for the display element; and a controller configured to determine at least one of transparency, color, pattern, and gradation of the display element and information displayed on the display element on the basis of the control command.

Abstract: A computer-implemented system for optimizing cost of goods sold is configured to: receive supplier configuration data of a supplier associated with the at least one product, supplier configuration data being extracted from an agreement defining parameters associated with one or more tiers; receive an order history associated with the supplier; determine a current tier and current progress within the current tier based on the order history, the current tier being specified by the supplier configuration data; determine an additional quantity necessary to reach a next tier according to the supplier configuration data; determine one or more trade-off parameters affected by the additional quantity, the one or more trade-off parameters being determined by a computerized model simulating future customer demand; and transmit a request to initiate a new order for the additional quantity based on the one or more trade-off parameters.

Abstract: A dynamic voltage supply circuit of a nonvolatile memory device includes a voltage amplification/output circuit and a dynamic voltage output circuit. The voltage amplification/output circuit receives a first clock signal and a second clock signal to generate a dynamic supply voltage greater than a supply voltage while the first clock signal has a “low” level. The dynamic voltage output circuit outputs the dynamic supply voltage while the first clock signal has a “low” level and outputs a ground voltage while the first clock signal has a “high” level.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.

Abstract: Composite particles and a negative electrode active material including such particles for an electrochemical device. The negative electrode active material is capable of lithium intercalation/deintercalation and includes composite particles including a carbon phase including a carbonaceous material, silicon (Si) and lithium fluoride (LiF). The Si and LiF may be present as Si—LiF mixed particles, which are dispersed in the carbon phase, wherein the Si—LiF mixed particles are dispersed in the carbon phase with uniform or non-uniform distribution. In addition, the composite particles include the carbon phase mixed uniformly or amorphously with the Si—LiF mixed particles.

Abstract: The present invention relates to Siphoviridae bacteriophage Lac-GAP-3 (Accession Number KCTC 12816BP) having the ability to specifically kill Lactococcusgarvieae bacteria and a genome represented by SEQ ID NO: 1 and isolated from nature, and a method for prevention and treatment of Lactococcusgarvieae bacterial infection by using a composition containing the same bacteriophage as an effective ingredient.

Abstract: A semiconductor device having a gate-all-around structure includes a first fin pattern and a second fin pattern separated by a first trench and extending in a first direction, a first nanosheet on the first fin pattern, a second nanosheet on the second fin pattern, a first fin liner extending along at least a portion of a sidewall and a bottom surface of the first trench, a first field insulation layer disposed on the first fin liner and filling a portion of the first trench, and a first gate structure overlapping an end portion of the first fin pattern and including a first gate spacer. A height from the bottom surface of the first trench to a lower surface of the first gate spacer is greater than a height from the bottom surface of the first trench to an upper surface of the first field insulation layer.

Abstract: A nonvolatile memory device includes a nonvolatile memory cell including a first cell transistor and a second cell transistor electrically coupled to a bit line in parallel and configured to respectively have a first physical size and a second physical size, a cell transistor selector coupled between the nonvolatile memory cell and a ground voltage terminal to control electrical connections between the first cell transistor and the ground voltage terminal, and between the second cell transistor and the ground voltage terminal, and a read voltage selection circuit suitable for selectively supplying one of a first read voltage and a second read voltage to the bit line.

Abstract: Various example embodiments relate to an electronic device for recognizing visual stimulus based on spontaneous selective neural response of deep artificial neural network and an operating method thereof, and may configured to measure a response of an untrained randomly-initialized neural network for an input image, and recognize at least one visual stimulus from the input image, based on the measured response.

Abstract: A display device that includes a first area including a display area, a second area including a non-display area, and a third area connecting the first and second areas. A demultiplexing circuit unit is disposed in the non-display area of the second area and overlaps with the first area in a direction of a thickness of the display device.

Abstract: The present embodiments may provide a technique of transmitting, by a terminal, channel state information with regard to one or more beams to a base station. The present embodiments provide a method and an apparatus for transmitting, by a terminal, channel state information with regard to one or more beams, the method comprising the steps of: receiving CSI reporting configuration information from a base station; determining whether or not group-based beams are to be reported on the basis of the CSI reporting configuration information; measuring RSRP with regard to CSI-RS received through one or more CSI-RS resources; and transmitting, to the base station, channel state information including values on a predetermined table on the basis of the group-based beam reporting and the CSI-RS RSRP measurement results.

Abstract: The present invention provides a combined heating and hot-water boiler for heating and hot-water. The combined heating and hot-water boiler comprises: a main heat exchanger which heats heating water through heat exchange; a hot-water heat exchanger to which the heating water heated by the main heat exchanger is supplied, and which heats tap water into hot water through heat exchange with the heating water; and a control unit which controls the flow of the heating water having passed through the hot-water heat exchanger to control the formation of at least one of a first flow path for supplying, to an object to be heated, the heating water having passed through the hot-water heat exchanger, and a second flow path for supplying, to the main heat exchanger, the heating water having passed through the hot-water heat exchanger.

Abstract: Embodiments relate to a method and device for transmitting and receiving sidelink HARQ feedback information. An embodiment relates to a method of receiving, by user equipment, a positioning reference signal (PRS). The user equipment receives configuration information regarding a PRS resource, which is used in reception of a PRS, from a base station, configures the PRS resource for the user equipment in accordance with the configuration information, and receives the PRS from the base station via the PRS resource.

Abstract: An apparatus for quantum-based physically unclonable functions is disclosed. The apparatus for quantum-based physically unclonable functions according to an embodiment of the present embodiment comprises a random nanostructure formed on a substrate by hydrothermal synthesis, wherein the random nanostructure emits a laser light of a predetermined pattern through the quantum activity of the random nanostructure.

Abstract: An inductor includes first and second external electrodes spaced apart from each other, a substrate disposed between the first and second external electrodes and having a first surface and a second surface opposing each other, and a conductive structure electrically connected to the first and second external electrodes. The conductive structure includes a first conductive pattern disposed on the first surface of the substrate, a second conductive pattern disposed on the second surface of the substrate, and at least one reinforcing portion. The first conductive pattern has a first side facing the first external electrode, the second conductive pattern has a second side facing the second external electrode, and the at least one reinforcing portion is electrically connected to at least one of the first and second sides and is interposed between the substrate and at least one of the first and second external electrodes.