Abstract: A stacked wafer level package includes a first semiconductor chip having a first bonding pad and a second semiconductor chip having a second bonding pad. Both bonding pads of the semiconductor chips face the same direction. The second semiconductor chip is disposed in parallel to the first semiconductor chip. A third semiconductor chip is disposed over the first and second semiconductor chips acting as a supporting substrate. The third semiconductor chip has a third bonding pad that is exposed between the first and the second semiconductor chips upon attachment. Finally, a redistribution structure is electrically connected to the first, second, and third bonding pads.

Abstract: A semiconductor package includes a substrate including a substrate body having a first face and a second face opposing the first face. A first through electrode passes through the substrate body between the first face and the second face. An insulation member is disposed over the first face; and a connection member having a first conductive unit disposed inside of the insulation member is electrically connected to the first through electrode, and a second conductive unit electrically connected to the first conductive unit is exposed at side faces of the insulation member. A semiconductor chip having third and fourth faces is disposed over the first face of the substrate body in a vertical direction. A second through electrode passes through the substrate body between the third and fourth faces and is electrically connected to the second conductive unit.

Abstract: A flexible semiconductor package includes a flexible substrate. A data chip is disposed over the flexible substrate. The data chip includes a data storage unit for storing data and first bonding pads that are electrically connected to the data storage unit. A control chip is disposed over the flexible substrate. The control chip includes a data processing unit for processing the data in the data chip and second bonding pads that are electrically connected to the data processing unit. Wirings are formed in order to electrically connect the first bonding pads to the second bonding pads.

Abstract: A semiconductor package module includes a circuit board including a board body having a receiving portion and conductive patterns formed on the board body; a semiconductor package received in the receiving portion and having conductive terminals electrically connected to the conductive patterns and an s semiconductor chip electrically connected to the conductive terminals; and a connection member electrically connecting the conductive patterns and the conductive terminals.

Abstract: A stacked semiconductor package and a method for manufacturing the same are presented which exhibit a reduced electrical resistance and an increased junction force. The semiconductor package includes at least two semiconductor chips stacked upon each other. Each semiconductor chip has a plurality of bonding pads formed on upper surfaces and has via-holes. First wiring lines are located on the upper surfaces of the semiconductor chips, on the surfaces of the via-holes, and respectively connected onto their respective bonding pads. Second wiring lines are located on lower surfaces of the semiconductor chips and on the surfaces of the respective via-holes which connect to their respective first wiring lines. The semiconductor chips are stacked so that the first wiring lines on an upper surface of an upwardly positioned semiconductor chip are respectively joined with corresponding second wiring lines formed on a lower surface of a downwardly positioned semiconductor chip.

Abstract: A semiconductor package having an internal cooling system is presented which includes a semiconductor chip and a through-electrode. The semiconductor chip has a circuit section. The through-electrode passes through an upper surface and a lower surface the semiconductor chip. The through-electrode is electrically connected with the circuit section of the semiconductor chip. The through-electrode also has a through-hole for allowing cooling fluid to flow therethrough.

Abstract: A stacked wafer level package includes a first semiconductor chip having a first bonding pad and a second semiconductor chip having a second bonding pad. Both bonding pads of the semiconductor chips face the same direction. The second semiconductor chip is disposed in parallel to the first semiconductor chip. A third semiconductor chip is disposed over the first and second semiconductor chips acting as a supporting substrate. The third semiconductor chip has a third bonding pad that is exposed between the first and the second semiconductor chips upon attachment. Finally, a redistribution structure is electrically connected to the first, second, and third bonding pads.

Abstract: A stacked wafer level package includes a first semiconductor chip having a first bonding pad and a second semiconductor chip having a second bonding pad. Both bonding pads of the semiconductor chips face the same direction. The second semiconductor chip is disposed in parallel to the first semiconductor chip. A third semiconductor chip is disposed over the first and second semiconductor chips acting as a supporting substrate. The third semiconductor chip has a third bonding pad that is exposed between the first and the second semiconductor chips upon attachment. Finally, a redistribution structure is electrically connected to the first, second, and third bonding pads.

Abstract: A semiconductor package includes at least two semiconductor chips stacked to have step surfaces and possessing bonding pads disposed over the step surfaces. Conductive patterns are disposed over the step surfaces and electrically connect the bonding pads of the semiconductor chips with one another. An insulation member is formed over side and upper surfaces of the stacked semiconductor chips excluding the step surfaces and the conductive patterns.

Abstract: A cube semiconductor package includes one or more stacked together and interconnected semiconductor chip modules. The cube semiconductor package includes a semiconductor chip module and connection members. The semiconductor chip module includes a semiconductor chip which has a first and second surface, side surfaces, bonding pads, through-electrodes and redistribution lines. The second surface faces away from the first surface. The side surfaces connect to the first and second surfaces. The bonding pads are placed on the first surface. The through-electrodes pass through the first and second surfaces. The redistribution lines are placed at least on one of the first and second surfaces and are electrically connected to the through-electrodes and the bonding pads, and have ends flush with the side surfaces. The connection members are placed on the side surfaces and electrically connected with the ends of the redistribution lines.

Abstract: A semiconductor package includes a substrate including a substrate body having a first face and a second face opposing the first face. A first through electrode passes through the substrate body between the first face and the second face. An insulation member is disposed over the first face; and a connection member having a first conductive unit disposed inside of the insulation member is electrically connected to the first through electrode, and a second conductive unit electrically connected to the first conductive unit is exposed at side faces of the insulation member. A semiconductor chip having third and fourth faces is disposed over the first face of the substrate body in a vertical direction. A second through electrode passes through the substrate body between the third and fourth faces and is electrically connected to the second conductive unit.

Abstract: A semiconductor package including a through-electrode for stacked a semiconductor package and a semiconductor package having the same is disclosed. The semiconductor package through-electrode includes a first electrode having a recessed portion formed therein to pass through a semiconductor chip. A second electrode is disposed within the recess of the first electrode. The first electrode of the semiconductor package through-electrode includes a first metal having a first hardness, and a second electrode comprises a second metal having a second hardness lower than the first hardness. The through-electrode passes through the semiconductor chip body and may be formed with the first metal having the first hardness and/or a first melting point and the second metal having the second hardness and/or a second melting point which are lower than the first hardness and/or the first melting point. This through-electrode allows a plurality of semiconductor packages to be easily stacked.

Abstract: A semiconductor package having an internal cooling system is presented which includes a semiconductor chip and a through-electrode. The semiconductor chip has a circuit section. The through-electrode passes through an upper surface and a lower surface the semiconductor chip. The through-electrode is electrically connected with the circuit section of the semiconductor chip. The through-electrode also has a through-hole for allowing cooling fluid to flow therethrough.

Abstract: A stack package includes an upper semiconductor chip having a plurality of first bonding pads which are formed on an upper surface of the upper semiconductor chip and via-holes which are defined in the upper semiconductor chip under the respective first bonding pads; and a lower semiconductor chip attached to a lower surface of the upper semiconductor chip and having a plurality of second bonding pads which are formed on an upper surface of the lower semiconductor chip and bumps which are formed on the respective second bonding pads and are inserted into the respective via-holes to be come into the respective first bonding pads.

Abstract: A semiconductor package having a stacked wafer level structure includes a base substrate; a semiconductor chip; a redistribution pattern; and a second insulation layer pattern. The base substrate having a chip region and a peripheral region disposed at the periphery of the chip region. The semiconductor chip is disposed over the chip region and has a bonding pad. The first insulation layer pattern covers the chip region and the peripheral region and exposes the bonding pad. The redistribution pattern is disposed over the first insulation layer pattern and extends from the bonding pad to the peripheral region. The second insulation layer pattern is disposed over the first insulation layer pattern and opening some portion of the redistribution pattern disposed in the peripheral region.

Abstract: A semiconductor package having an internal cooling system is presented which includes a semiconductor chip and a through-electrode. The semiconductor chip has a circuit section. The through-electrode passes through an upper surface and a lower surface the semiconductor chip. The through-electrode is electrically connected with the circuit section of the semiconductor chip. The through-electrode also has a through-hole for allowing cooling fluid to flow therethrough.

Abstract: A flexible semiconductor package includes a flexible substrate. A data chip is disposed over the flexible substrate. The data chip includes a data storage unit for storing data and first bonding pads that are electrically connected to the data storage unit. A control chip is disposed over the flexible substrate. The control chip includes a data processing unit for processing the data in the data chip and second bonding pads that are electrically connected to the data processing unit. Wirings are formed in order to electrically connect the first bonding pads to the second bonding pads.

Abstract: A flexible semiconductor package includes a flexible substrate. A data chip is disposed over the flexible substrate. The data chip includes a data storage unit for storing data and first bonding pads that are electrically connected to the data storage unit. A control chip is disposed over the flexible substrate. The control chip includes a data processing unit for processing the data in the data chip and second bonding pads that are electrically connected to the data processing unit. Wirings are formed in order to electrically connect the first bonding pads to the second bonding pads.

Abstract: A stacked semiconductor package and a method for manufacturing the same are presented which exhibit a reduced electrical resistance and an increased junction force. The semiconductor package includes at least two semiconductor chips stacked upon each other. Each semiconductor chip has a plurality of bonding pads formed on upper surfaces and has via-holes. First wiring lines are located on the upper surfaces of the semiconductor chips, on the surfaces of the via-holes, and respectively connected onto their respective bonding pads. Second wiring lines are located on lower surfaces of the semiconductor chips and on the surfaces of the respective via-holes which connect to their respective first wiring lines. The semiconductor chips are stacked so that the first wiring lines on an upper surface of an upwardly positioned semiconductor chip are respectively joined with corresponding second wiring lines formed on a lower surface of a downwardly positioned semiconductor chip.

Abstract: A semiconductor chip includes a semiconductor substrate having a top surface and a bottom surface. A circuit layer having bonding pads may be formed over the top surface of the semiconductor substrate. Through electrodes may be formed to pass from a bottom surface to a top surface of the semiconductor substrate, and the through electrodes may comprise through parts connected with the bonding pads and projecting parts formed over the bottom surface of the semiconductor substrate and electrically connected with the through parts. Test pad parts may be disposed over the bottom surface of the semiconductor substrate and is connected with the through electrodes to test normal operation of the circuit layer and electrical connections of the through electrodes and the circuit layer.