Abstract: The present invention provides a flash memory controller configured to access a flash memory module. The flash memory controller includes a transmission interface circuit, a buffer memory and a microprocessor. The transmission interface circuit is coupled to a host device, and the transmission interface circuit includes a time queue, at least one virtual queue and a command processing circuit, wherein the command processing circuit is configured to receive a plurality commands from a host device, write information of the plurality of commands into the time queue in sequence, and write the information of at least part of the plurality of commands into the at least one virtual queue. The buffer memory is configured to store the plurality of commands. The microprocessor is configured to selectively read the time queue or the at least one virtual queue to read the information of the plurality of commands.

Abstract: The invention discloses a prefetch-adaptive intelligent cache replacement policy for high performance, in the presence of hardware prefetching, a prefetch request and a demand request are distinguished, a prefetch predictor based on an ISVM (Integer Support Vector Machine) is used for carrying out re-reference interval prediction on a cache line of prefetching access loading, and a demand predictor based on an ISVM is utilized to carry out re-reference interval prediction on a cache line of demand access loading. A PC of a current access load instruction and PCs of past load instructions in an access historical record are input, different ISVM predictors are designed for prefetch and demand requests, reuse prediction is performed on a loaded cache line by taking a request type as granularity, the accuracy of cache line reuse prediction in the presence of prefetching is improved, and performance benefits from hardware prefetching and cache replacement is better fused.

Abstract: Provided herein are LpxC inhibitor compounds, as well as pharmaceutical compositions comprising said compounds, and methods of use thereof in the treatment of disease that would benefit from treatment with an LpxC inhibitor, including gram-negative bacterial infections such as urinary tract infections and the like.

Abstract: A laser capable of reducing the difficulty of a wavelength tuning process, a fabrication method therefor, and a laser device. The laser comprises: an active light-emitting structure used for emitting light; a silicon-based structure which is bonded to the active light-emitting structure, and which comprises a silicon-based waveguide and at least two composite gratings, wherein the composite gratings are opposite to the active light-emitting structure and are formed in the silicon-based waveguide. Each composite grating comprises one primary grating and a plurality of secondary gratings, the secondary gratings are periodically arranged to form the primary grating, and the primary gratings in at least a portion of the composite gratings have different grating periods from that of the primary gratings in other composite gratings. The silicon-based structure and the active light-emitting structure form at least two laser units, and each laser unit corresponds to one composite grating.

Abstract: A semiconductor device includes a substrate, a plurality of bit lines, a plurality of contacts, a plurality of storage node pads, a capacitor structure and a plurality of first interface layers. The bit lines and the contacts are disposed on the substrate, and the contacts are alternately and separately disposed with the bit lines. The storage node pads are disposed on the contacts and the bit lines, and are respectively aligned with the contacts. The capacitor structure is disposed on the storage node pads. The first interface layers are disposed between the storage node pads and the capacitor structure, and the first interface layers include a metal nitride material. The first interface layers may improve the granular size of the storage node pads, and reduce the surface roughness thereof, and further improve the electrical connection between the storage nodes and transistor components below.

Abstract: The present disclosure provides a semiconductor device and a fabricating method thereof, and the semiconductor device includes a substrate, a plurality of conductive pads, and a plurality of conductive columns. The conductive pads are separately disposed in a first insulating layer, over the substrate. The conductive columns are separately disposed in a second insulating layer, individually contacting each of the conductive pads. The second insulating layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer stacked on sidewalls of the conductive columns, wherein the second dielectric layer physically contacts the first dielectric layer, the conductive pads and the third dielectric layer at the same time. The second insulating layer is allowable to avoid the short-circuit issue caused by excessively lateral etching, thereby improving the structural reliability and the performances.

Abstract: Provided herein are heterocyclic compounds and pharmaceutical compositions comprising said compounds that are useful for inhibiting the growth of gram-negative bacteria. The subject compounds and compositions are useful for the treatment of bacterial infections, such as pneumonia.

Abstract: Provided herein are heterocyclic compounds and pharmaceutical compositions comprising said compounds that are useful for inhibiting the growth of gram-negative bacteria. The subject compounds and compositions are useful for the treatment of bacterial infections, such as pneumonia.

Abstract: The present invention provides a semiconductor memory device including a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: Provided herein is an LpxC inhibitor compound, as well as methods of making and pharmaceutical compositions comprising said compound, and methods of use thereof in the treatment of disease that would benefit from treatment with an LpxC inhibitor, including gram-negative bacterial infections such as urinary tract infections and the like.

Abstract: Described herein are compounds that are glutaminyl-peptide cyclotransferase like (QPCTL) protein modulators, methods of making such compounds, pharmaceutical compositions and medicaments comprising such compounds, and methods of using such compounds in the treatment of conditions, diseases, or disorders that would benefit from modulation of QPCTL activity.

Abstract: The present invention relates to protein kinase C beta II inhibiting compounds of Formula (A): wherein A, B, R1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are as defined herein. The invention further relates to pharmaceutical compositions comprising the compounds of Formula (A), or pharmaceutically acceptable salts thereof, and methods for treating a disease or disorder selected from the group consisting of Alzheimer's disease, cancer, a cardiovascular disease, a central nervous system disorder, depression, a dermatological disease, diabetes mellitus, a complication arising from diabetes mellitus, a disease in which the liver is a target organ inflammation, an inflammatory disorder, ischemia, and a viral disease.

Abstract: Provided herein is an LpxC inhibitor compound, as well as methods of making and pharmaceutical compositions comprising said compound, and methods of use thereof in the treatment of disease that would benefit from treatment with an LpxC inhibitor, including gram-negative bacterial infections such as urinary tract infections and the like.

Abstract: Provided herein is an LpxC inhibitor compound, as well as pharmaceutical compositions comprising said compound, and methods of use thereof in the treatment of disease that would benefit from treatment with an LpxC inhibitor, including gram-negative bacterial infections such as urinary tract infections and the like.

Abstract: An organic compound having the following formula (I) is described: The application of the organic compound in an organic electroluminescence device is also described.

Abstract: The present invention provides a semiconductor memory device including a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: A semiconductor memory device includes a substrate and a capacitor. The capacitor is disposed on the substrate, and the capacitor includes a bottom electrode layer, a capacitor dielectric layer and a top electrode layer sequentially stacked from bottom to top and an aluminum-containing insulation layer. The aluminum-containing insulation layer includes aluminum titanium nitride or aluminum oxynitride, and is in direct contact with the capacitor dielectric layer and disposed between the bottom electrode layer and the top electrode layer. Therefore, the semiconductor memory device may effectively improve the leakage current.

Abstract: A semiconductor device includes a substrate, a plurality of bit lines, a plurality of contacts, a plurality of storage node pads, a capacitor structure and a plurality of first interface layers. The bit lines and the contacts are disposed on the substrate, and the contacts are alternately and separately disposed with the bit lines. The storage node pads are disposed on the contacts and the bit lines, and are respectively aligned with the contacts. The capacitor structure is disposed on the storage node pads. The first interface layers are disposed between the storage node pads and the capacitor structure, and the first interface layers include a metal nitride material. The first interface layers may improve the granular size of the storage node pads, and reduce the surface roughness thereof, and further improve the electrical connection between the storage nodes and transistor components below.

Abstract: The present invention provides a semiconductor memory device and a fabricating method thereof. The semiconductor memory device includes a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: Provided herein are heterocyclic derivative compounds and pharmaceutical compositions comprising said compounds that are useful for inhibiting the growth of gram-negative bacteria. Furthermore, the subject compounds and compositions are useful for the treatment of bacterial infection, such as urinary tract infection and the like.