Abstract: Disclosed is a fully immersed energy storage device, which includes a casing and a water pump. An insulation box is mounted inside the casing, and the insulation box is assembled with an assembly plate thereon. A mounting platform is mounted on the assembly plate and assembled with an annular rack. A rotating groove is provided between the mounting platform and the annular rack. Balls are placed in the rotating groove. The mounting platform is assembled with an assembly block, on which a rotating shaft is mounted. One end of the rotating shaft connects to a gear. The other end of the rotating shaft connects to a first assembly rod, to which a second assembly rod is connected. The second assembly rod connects to a fixed block, which is connected to an energy storage box. A motor base is mounted on the casing. A motor is mounted on the motor base.

Abstract: The present application relates to a silicone oil-based immersion coolant for an electronic component. The silicone oil-based immersion coolant for an electronic component includes a base oil and an additive. The base oil includes a low-viscosity silicone oil. The additive includes a silicone oil diluent and a thermally conductive inorganic filler. The viscosity of the low-viscosity silicone oil is less than or equal to 1000 cSt. The thermally conductive inorganic filler is an insulating filler. Based on the mass of the immersion coolant, a mass percentage content of the base oil is in a range from 70% to 85%, a mass percentage content of the silicone oil diluent is in a range from 10% to 20%, and a mass percentage content of the thermally conductive inorganic filler is in a range from 5% to 10%.

Abstract: Three-dimensional integrated circuit (3DIC) structures and methods of forming the same are provided. A 3DIC structure includes a semiconductor package, a first package substrate, a molded underfill layer and a thermal interface material. The semiconductor package is disposed over and electrically connected to the first package substrate through a plurality of first bumps. The semiconductor package includes at least one semiconductor die and an encapsulation layer aside the semiconductor die. The molded underfill layer surrounds the plurality of first bumps and a sidewall of the semiconductor package, and has a substantially planar top surface. The CTE of the molded underfill layer is different from the CTE of the encapsulation layer of the semiconductor package. The thermal interface material is disposed over the semiconductor package.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: Disclosed in a movement direction determination system comprising a first detection region, a second detection region and a processing circuit. The first detection region and the second detection region respectively comprises an optical sensor. The processing circuit determines a movement direction of an object according to the optical data generated by the first detection region and the second detection region. The present invention also discloses a movement direction determination system using a single detection region. The present invention also discloses an object volume computation system which can compute an object volume according to sensed optical data. The disclosed movement direction determination system can be used for various applications and the object volume computation system can assist product confirmation.

Abstract: A ranging system includes a pinhole camera, a fisheye camera and a processor. The pinhole camera captures a pinhole image. The fisheye camera captures a fisheye image. The processor performs a undistorting process on the fisheye image to obtain a corresponding undistorted fisheye image, perform a size-converting process on the pinhole image to obtain a corresponding size-converted pinhole image, obtain a transformation relation between a pinhole image plane of the pinhole camera and a fisheye image plane of the fisheye camera, obtain a corresponding point of the corresponding undistorted fisheye image corresponding to a target point of the corresponding size-converted pinhole image based on the transformation relation, and obtain a distance between the ranging system and the physical point based on the transformation relation, the target point and the corresponding point.

Abstract: A processing method for vehicle surround view, a vehicle surround view system and an in-vehicle processing device are provided. The processing method for vehicle surround view includes the following steps: obtaining a first exterior image and a second exterior image; recognizing a first interest object in the first exterior image and a second interest object in the second exterior image; fitting the first interest object to a first geometric contour and fitting the second interest object to a second geometric contour; applying the first geometric contour and the second geometric contour on a 3D model, to obtain a ground point, a first contour position and a second contour position; obtaining a merged contour position according to the ground point; and projecting the first interest object or the second interest object at the merged contour position on a vehicle surround image.

Abstract: An electronic apparatus and a secure firmware update method thereof are provided. The electronic apparatus includes a first integrated circuit chip, a first non-volatile memory chip, a second integrated circuit chip and a second non-volatile memory chip. The first integrated circuit chip includes a secure firmware update console, and the first non-volatile memory chip includes a spare data storage space. The first non-volatile memory chip and the second non-volatile memory chip store a first firmware code of the first integrated circuit chip and a second firmware code of the second integrated circuit chip, respectively. Firmware code update data are transferred to and stored in the spare data storage space. The secure firmware update console performs a firmware update procedure by writing the firmware code update data into the second non-volatile memory chip to overwrite the second firmware code after passing a verification procedure on the firmware code update data.

Abstract: A semiconductor device includes: at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a conductive material; and a first dielectric layer disposed along one or more side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride or fluorine doped silicon oxycarbide.

Abstract: A semiconductor device includes: at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a conductive material; and a first dielectric layer disposed along one or more side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride or fluorine doped silicon oxycarbide.

Abstract: An electronic apparatus and a secure firmware update method thereof are provided. The electronic apparatus includes a first integrated circuit chip, a first non-volatile memory chip, a second integrated circuit chip and a second non-volatile memory chip. The first integrated circuit chip includes a secure firmware update console, and the first non-volatile memory chip includes a spare data storage space. The first non-volatile memory chip and the second non-volatile memory chip store a first firmware code of the first integrated circuit chip and a second firmware code of the second integrated circuit chip, respectively. Firmware code update data are transferred to and stored in the spare data storage space. The secure firmware update console performs a firmware update procedure by writing the firmware code update data into the second non-volatile memory chip to overwrite the second firmware code after passing a verification procedure on the firmware code update data.

Abstract: Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.

Abstract: A semiconductor device includes: at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a conductive material; and a first dielectric layer disposed along one or more side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride or fluorine doped silicon oxycarbide.

Abstract: Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.

Abstract: A method for forming a semiconductor device includes steps of: forming at least one gate structure comprising a gate electrode over a substrate, and forming a first dielectric layer of a first dielectric material along a side wall of the at least one gate structure. The first dielectric layer of the first dielectric material includes fluorine doped silicon oxycarbonitride with a doping concentration of fluorine. The dielectric constant of the first dielectric layer is adjusted through the doping concentration of fluorine.

Abstract: A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.

Abstract: A method for forming a semiconductor device includes steps of: forming at least one gate structure comprising a gate electrode over a substrate, and forming a first dielectric layer of a first dielectric material along a side wall of the at least one gate structure. The first dielectric layer of the first dielectric material includes fluorine doped silicon oxycarbonitride with a doping concentration of fluorine. The dielectric constant of the first dielectric layer is adjusted through the doping concentration of fluorine.

Abstract: A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.

Abstract: There is provided an electronic device including a power circuit and a system circuit. The system circuit includes a processing unit and a charge-discharge device. The processing unit controls the power circuit to stop providing power to the system circuit when identifying that the electronic device enters a standby state and that a discharge voltage of the charge-discharge device is higher than a predetermined voltage thereby decreasing a standby power consumption of the electronic device.

Abstract: The invention relates to a transparent conductive film. The transparent conductive film has a plastic film substrate, whose two surfaces are provided in sequence with at least two undercoat layers and a patterned transparent conductive layer, respectively. The invention overcomes the drawback of image deterioration caused by the patterning of the transparent conductive layers and reduces the optical difference between the patterned regions and the non-patterned regions by adjusting the refractive indexes and thicknesses of the various layers.