Abstract: A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to modify a surface of a sheet workpiece, providing a reciprocating sputtering process to deposit metal oxide layers or semiconductor oxide layers on the sheet workpiece, preheating the sheet workpiece and providing a reciprocating ITO sputtering process to sputter ITO transparent conductive layers on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work line and controls delay time between the sputtering units to deposit a film with a predetermined thickness on the sheet workpiece.

Abstract: A method for sputtering a multilayer film on a sheet workpiece at a low temperature of the present invention has the following steps: employing plasma to clean a surface of a sheet workpiece, sputtering at least one metal oxide or semiconductor oxide on the sheet workpiece, and sputtering at least one ITO transparent electric layer on the sheet workpiece. The film sputtering process of the sheet workpiece employs continuously connecting work stations, thereby controlling delay time between the work stations of the sheet workpiece within a given range. The sheet workpiece is made from a macromolecular material.

Abstract: The present invention discloses a method for operating and controlling electroless plating, which comprises plating a substrate with a plating solution, the substrate is controlled at a constant temperature between 25° C. to 200° C., and the plating solution is kept at a lower temperature than that of the substrate. According to the method of the present invention, superior depositing rates can be achieved, undesired spontaneous decomposition of the plating solution at high temperature can be avoided and no stabilizers are necessary.