Abstract: The present application provides an intersecting procedure processing method, an intersecting procedure processing device, an apparatus and a storage medium. The method, applied to a master node, includes: receiving a secondary node procedure message sent by a secondary node; and determining a service processing procedure according to a scenario of a master node service, a scenario of the secondary node procedure and a preset priority of service scenarios, a handover scenario of the secondary node procedure is determined by the secondary node procedure message.

Abstract: A steering wheel suspension structure of an omnidirectional mobile robot includes a steering wheel connecting ring, a plurality of leaf spring connecting beams and a chassis mounting section. The steering wheel suspension structure is an integrated plate structure. The steering wheel connecting ring is connected with a steering wheel, and the chassis mounting section is connected with a robot chassis. The leaf spring connecting beam is connected with the steering wheel connecting ring and the chassis mounting section, and the leaf spring connecting beam is used as the main component of suspension deformation. The suspension structure is simple, easy to install, light in weight, less in space, and highly integrated with the steering wheel assembly. When the suspension is deformed by the force, it weakens the radial force and only has the displacement and force in the vertical direction, thus ensuring the handling performance of the chassis.

Abstract: Disclosed is a system for managing a vehicle battery that is chargeable/dischargeable and stores energy for driving a vehicle driving motor. The system for managing the vehicle battery as disclosed includes a controller that measures a polarization voltage of each of a plurality of battery cells in a vehicle battery after charging of the vehicle battery is terminated, and determines whether each of the plurality of battery cells is abnormal based on the measured polarization voltage.

Abstract: A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.

Abstract: Disclosed is a furan diacid-based polyamide resin, which is derived from the following repeating units: (A) 2,5-furandicarboxylic acid, (B) 1,4-cyclohexanedicarboxylic acid, and (C) 1,10-decanediamine, where based on the total molar percentage of the diacid units, (A) accounts for 5-45 mol % of the diacid units.

Abstract: According to an embodiment of the present disclosure, a method of manufacturing a card by using a card manufacturing device includes the steps of: forming an adhesive layer on a body plate made of a metal material having a preset first surface roughness; performing a vacuum deposition process using a first metal base on the adhesive layer; and print-processing a 3D pattern layer by using UV on a surface of the adhesive layer on which the vacuum deposition process was performed.

Abstract: A display device includes a first electrode on a substrate; a pixel-defining layer disposed on the substrate and defining a first opening overlapping the first electrode, a bank structure disposed on the pixel-defining layer and defining a second opening overlapping the first opening; a first emissive layer disposed on the first electrode and disposed in the first opening; and a second electrode disposed on the first emissive layer and contacting the bank structure in the second opening. The bank structure includes a first base disposed on the pixel-defining layer and including a conductive material, and a second base disposed on the first base and including a tip protruding toward the first opening. The second base includes a first bank layer disposed on the first base and including a transparent conductive material, and a second bank layer disposed on the first bank layer and including a conductive material.

Abstract: A semiconductor device may include a gate structure, a source structure that is disposed on the gate structure, channel structures that extend into the source structure through the gate structure and include a channel layer and a memory layer surrounding the channel layer, the memory layer including a cut area that exposes the channel layer, and a slit structure that extends into the source structure through the gate structure between the channel structures, an upper surface of the slit structure being disposed at a lower level than the cut area.

Abstract: A method for managing network connections includes steps of: in response to receipt of a request for establishing a new network connection, storing in a connection-tracking (Conntrack) table an entry of tracked connection data that is related to the new network connection to be established, and updating a current tracked-connection count by adding one thereto; determining a priority level of the new network connection according to a data packet transmitted through the new network connection; and determining whether to output data packets that are received through the new network connection based at least on the current tracked-connection count and the priority level of the new network connection.

Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.

Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Abstract: The present invention provides a power device with super junction structure (or referred to as super junction power device) and a method of making the same. When making a super junction power device, impurity of a second conductive type may be implanted into an epitaxial layer of a first conductive type to form a floating island of the second conductive type and a pillar of the second conductive type successively through a super junction mask (or reticle) after forming the epitaxial layer of the first conductive type, directly through a well mask (or reticle) before or after forming a well region of the second conductive type, and directly through a contact mask (or reticle) before or after forming a contact structure. Multiple epitaxial processes and deep trench etching process may not be needed. Therefore, the process is simple, the cost is low and yield and reliability are high.

Abstract: The present invention provides a power device with super junction structure (or referred to as super junction power device). When making a super junction power device, impurity of a second conductive type may be implanted into an epitaxial layer of a first conductive type to form a floating island of the second conductive type and a pillar of the second conductive type successively through a super junction mask (or reticle) after forming the epitaxial layer of the first conductive type, directly through a well mask (or reticle) before or after forming a well of the second conductive type, and directly through a contact mask (or reticle) before or after forming a contact structure. Multiple epitaxial processes and deep trench etching process may not be needed. Therefore, the process is simple, the cost is low and yield and reliability are high.

Abstract: Disclosed is an operating method of an electronic device which includes a processor and supports manufacture of a semiconductor device. The operating method includes receiving, at the processor, a layout image for the manufacture of the semiconductor device and a captured image generated by capturing the semiconductor device actually manufactured, aligning, at the processor, the layout image and the captured image based on a result of emphasizing edges and corners of the layout image and the captured image, and performing, at the processor, learning based on the aligned layout image and the aligned captured image such that a first modified layout image is generated from the layout image, and the semiconductor device is manufactured based on a second modified layout image generated from the layout image.

Abstract: The present disclosure provides a grid system, including a grid body and supports, where the grid body includes a water intake module, a filtering module, a residue scraping module, a residue pressing module, and a water discharge module; the filtering module is disposed at a middle-upper part of the grid body, the water intake module and the residue pressing module are organically coupled at a lower part of the filtering module, and the water intake module includes a water inlet and a water distribution area; the filtering module includes a water retaining platform, an inflow water guide plate, screen plate areas, and a central water retaining weir; the residue scraping module includes scrapers, a driving motor, a support frame, a residue inlet, and a guide rail; the residue pressing module includes a squeezing cylinder, a motor, and a residue outlet.

Abstract: An aspect of the present invention may provide a hot-rolled steel sheet having excellent yield strength, vibration damping ratio, weldability, and low-temperature toughness in a weld zone, and thus having physical properties suitable for application to a tube of a hyperloop vacuum train, and a method for manufacturing the same.

Abstract: A display panel includes: a first active area and at least one second active area, a substrate; a plurality of sub-pixels located on the substrate, the plurality of sub-pixels being in the first active area, and each of the sub-pixels including a common electrode; grid lines and data lines, at least one of the data lines being located at a junction of the first active area and the second active area; a plurality of first conductive patterns at least in the second active area, and the first conductive patterns being electrically connected to one of the grid lines or the common electrode; and a plurality of second conductive patterns in the second active area and electrically connected to the data line at the junction, orthographic projections of part first conductive patterns on the substrate overlap orthographic projections of the second conductive patterns on the substrate.

Abstract: A display device includes an emission area including a pixel electrode, an inorganic layer exposing the pixel electrode to outside the inorganic layer, a light emitting layer and a common electrode, and a bank layer on the inorganic layer and in which an opening is defined corresponding to the emission area. The bank layer includes a first bank layer including zinc, a second bank layer on the first bank layer, a third bank layer on the second bank layer, each of the first bank layer, the second bank layer and the third bank layer including a side surface which defines a portion of the opening in the bank layer; the side surface of the first bank layer recessed from the side surface of the second bank layer in a direction away from the first emission area; and the side surface of the second bank layer recessed from the side surface of the first bank layer in a direction away from the emission area.

Abstract: The present invention discloses a furan diacid-based polyamide, which is derived from the following repeating units: (A) 2,5-furandicarboxylic acid, (B) 1,4-cyclohexanedicarboxylic acid, and (C) 1,5-pentanediamine, where based on the total molar percentage of the diacid units, (A) accounts for 10-45 mol % of the diacid units. The furan diacid-based polyamide of the present invention has a melting point of 291-335° C.

Abstract: A display device includes a substrate; a first pixel electrode disposed on the substrate; a pixel defining layer disposed on the substrate and defining a first opening overlapping the first pixel electrode; a bank structure disposed on the pixel defining layer and defining a second opening overlapping the first opening; a first light emitting layer disposed on the first pixel electrode and in the first opening; a first common electrode disposed on the first light emitting layer and in contact with the bank structure in the second opening; a first auxiliary electrode disposed on the first common electrode, completely covering the first common electrode in the second opening, and in contact with the bank structure; a second auxiliary electrode disposed on the first auxiliary electrode, completely covering the first auxiliary electrode in the second opening, and in contact with the bank structure; and a first encapsulation layer.