Abstract: A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.

Abstract: A composite gel polymer electrolyte lithium battery structure includes a positive electrode, a negative electrode and an electrolyte film component. The electrolyte film component, disposed between the positive electrode and the negative electrode, includes a separator and at least one electrolyte film. The at least one electrolyte film is at least consisted of sulfolane and/or propylene carbonate (PC), a lithium salt material, a solid-state polymer material and fire-retardant additives. In addition, a method for fabricating the composite gel polymer electrolyte lithium battery structure is also provided.

Abstract: A method for manufacturing a gel-state flame-retardant electrolyte film includes the steps of: preparing a first solution having a high boiling-point solvent; adding a solid-state polymer material into the first solution, and performing a heating and stirring process to form a second solution; adding a flame-retardant electrolyte material and a flame-retardant water-absorbent material into the second solution for forming a third solution by well mixing; forming the third solution into a viscous matter; and, solidifying the viscous matter to form the gel-state flame-retardant electrolyte film. In addition, a gel-state flame-retardant electrolyte film, a gel-state electrolyte battery and a method for manufacturing the gel-state electrolyte battery are also provided.

Abstract: A composite gel polymer electrolyte lithium battery structure includes a positive electrode, a negative electrode and an electrolyte film component. The electrolyte film component, disposed between the positive electrode and the negative electrode, includes a separator and at least one electrolyte film. The at least one electrolyte film is at least consisted of sulfolane and/or propylene carbonate (PC), a lithium salt material, a solid-state polymer material and fire-retardant additives. In addition, a method for fabricating the composite gel polymer electrolyte lithium battery structure is also provided.

Abstract: A method is provided for fabricating a film layer. A cathode film layer of lithium ion batteries is fabricated through atmospheric plasma spraying (APS) without using polymer adhesive. The ratio of its active substance can even reach 100%. Moreover, the cathode film layer fabricated by APS obtains pores, where, with the coordination of a liquid electrolyte, electrolyte penetration paths are provided to significantly increase the area of reaction. Hence, the effective thickness of the film layer is relatively thick and the capacity of battery is increased. As an example, the thickness of a film layer of lithium cobalt oxide fabricated accordingly reaches more than 100 microns; and its maximum electric capacity per unit area reaches 6 milliampere-hours per square centimeter (mAh/cm2). Thus, the performance of the follow-on solid-state lithium-ion battery is improved and its high-volume manufacturing cost is reduced.

Abstract: The present invention provides an electrochemical unit, a manufacturing method for the same and a use of the same as a component of batteries, and an electrochemical device including the same. The electrochemical unit includes a mixture layer and a transition metal oxide layer. The mixture layer includes an oxide made of a first transition metal, an oxide made of a second transition metal, and a first alkali metal. The transition metal oxide layer is disposed on one side of the mixture layer, where the transition metal oxide layer includes a third transition metal oxide.

Abstract: A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.

Abstract: A method for manufacturing a gel-state flame-retardant electrolyte film includes the steps of: preparing a first solution having a high boiling-point solvent; adding a solid-state polymer material into the first solution, and performing a heating and stirring process to form a second solution; adding a flame-retardant electrolyte material and a flame-retardant water-absorbent material into the second solution for forming a third solution by well mixing; forming the third solution into a viscous matter; and, solidifying the viscous matter to form the gel-state flame-retardant electrolyte film. In addition, a gel-state flame-retardant electrolyte film, a gel-state electrolyte battery and a method for manufacturing the gel-state electrolyte battery are also provided.

Abstract: A method for manufacturing a doped metal oxide film includes following steps. First, a substrate is provided. Second, a metal oxide film is formed on the substrate by using a capacitive pulsed arc plasma technique to control a metal ion film to be doped, and by integrating an arc plasma coating process or a physical vapor deposition process. The invention completes the in-situ doping function of metal oxides and compounds in a single process, and can be used for manufacturing functional components for continuous processes without breaking vacuum condition, and is applied to the thin film process of electrochemical components such as electrochromic devices or lithium batteries.

Abstract: The present invention provides an electrochemical unit, a manufacturing method for the same and a use of the same as a component of batteries, and an electrochemical device including the same. The electrochemical unit includes a mixture layer and a transition metal oxide layer. The mixture layer includes an oxide made of a first transition metal, an oxide made of a second transition metal, and a first alkali metal. The transition metal oxide layer is disposed on one side of the mixture layer, where the transition metal oxide layer includes a third transition metal oxide.

Abstract: The present invention discloses a method for fabricating an electrochromic device, which adopts the vacuum cathodic arc-plasma deposition to comprise five layers with an ionic conduction layer (electrolyte) in contact with an electrochromic (EC) layer and an ion storage (complementary) layer, all sandwiched between two transparent conducting layers sequentially on a substrate. The method owns superior deposition efficiency and the fabricated thin film structures have higher crystalline homogeneity. In addition, thanks to the nanometer pores in the thin film structures, the electric capacity as well as the ion mobility are greater. Consequently, the reaction efficiency for bleaching or coloring is enhanced.

Abstract: A method for manufacturing electrochemical device, which may include the following steps: disposing a metal material or a metal oxide material to be doped on the anode of the plasma source of the arc plasma coating equipment; forming a metal oxide film of the electrochemical device by the arc plasma coating equipment via an arc plasma coating process; and doping the metal material or the metal oxide material into the metal oxide film after being mixed with the plasma by heat vaporization via the phenomenon of the electrons heating the anode of the plasma source.

Abstract: The present invention discloses a method for fabricating an electrochromic device, which adopts the vacuum cathodic arc-plasma deposition to comprise five layers with an ionic conduction layer (electrolyte) in contact with an electrochromic (EC) layer and an ion storage (complementary) layer, all sandwiched between two transparent conducting layers sequentially on a substrate. The method owns superior deposition efficiency and the fabricated thin film structures have higher crystalline homogeneity. In addition, thanks to the nanometer pores in the thin film structures, the electric capacity as well as the ion mobility are greater. Consequently, the reaction efficiency for bleaching or coloring is enhanced.

Abstract: The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of a microcrystalline silicon thin film that is to be formed by the manufacturing method can be controlled and adjusted at will and the defects in the microcrystalline silicon thin film can be fixed, but also the device characteristic degradation due to chamber contamination happening in the manufacturing process, such as plasma enhanced chemical vapor deposition (PECVD), can be eliminated effectively.

Abstract: The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of a microcrystalline silicon thin film that is to be formed by the manufacturing method can be controlled and adjusted at will and the defects in the microcrystalline silicon thin film can be fixed, but also the device characteristic degradation due to chamber contamination happening in the manufacturing process, such as plasma enhanced chemical vapor deposition (PECVD), can be eliminated effectively.

Abstract: A practical product combining a thin film solar cell component with a residential environment is provided. Being flexible and easy to manufacture on a plane material, a silicon thin film solar cell is combined with a shutter used in residential buildings, thereby extending shutter functions. This module integrates energy saving, power generation and elegant appearance by bringing in a flexible and colored solar cell module that is light and thin and can generate power indoors and outdoors. As buildings are becoming higher nowadays, the area exposed to sunlight increases. Solar shutters have great power generation efficiency potential if used a building. The solar shutters can save energy and reduce CO2 emission when combined with electric products and provide electricity in emergency when combined with a storage device. The thin film solar cell provides components of many colors for customers, thereby providing options for the appearance of the building.

Abstract: A non-volatile static random access memory (NVSRAM) cell including a static random access circuit, first storage device, a second storage device, and a switch unit is provided. The static random access circuit has a first terminal and a second terminal respectively having a first voltage and a second voltage. Stored data in the first storage device and the second storage device are determined by the first voltage and the second voltage. The first storage device and the second storage device respectively have a first connection terminal and a second connection terminal. The switch unit is respectively coupled to the second connection terminals of the first storage device and the second storage device, and is controlled by a switching signal of a switch line to conduct the first storage device and the second storage device to a same bit line or a same complementary bit line.

Abstract: A non-volatile static random access memory (NVSRAM) cell including a static random access circuit, first storage device, a second storage device, and a switch unit is provided. The static random access circuit has a first terminal and a second terminal respectively having a first voltage and a second voltage. Stored data in the first storage device and the second storage device are determined by the first voltage and the second voltage. The first storage device and the second storage device respectively have a first connection terminal and a second connection terminal. The switch unit is respectively coupled to the second connection terminals of the first storage device and the second storage device, and is controlled by a switching signal of a switch line to conduct the first storage device and the second storage device to a same bit line or a same complementary bit line.

Abstract: A thin-film photovoltaic device comprising at least: a substrate, a transparent electrode layer, a p-type semiconductor as the ohmic contact layer, an intrinsic semiconductor as the light absorption layer, and a magnesium alloy substituted for the n-type semiconductor as the other ohmic contact layer. A method for manufacturing the thin-film photovoltaic device is also provided in the present invention.

Abstract: A memory with improved write current is provided, including a bit line, a write switch and a control circuit. The write switch is coupled between a voltage source and the bit line, and has a control terminal. Based on a bit line select signal, the control circuit controls the electric conductance of the write switch and discharges/charges the parasitic capacitors of the write switch. The voltage source is turned on after the control terminal of the write switch reaches a pre-determined voltage level.