Abstract: A paper feeding mechanism includes a feeding path, a driving motor, a bidirectional transmission mechanism, at least one feeding roller, a unidirectional transmission mechanism and at least one blocking roller. The driving motor is controllable to output a driving force towards a forward direction or a driving force towards a reverse direction. The bidirectional transmission mechanism is connected to the driving motor. The at least one feeding roller is mounted in the feeding path. The at least one feeding roller is connected to the bidirectional transmission mechanism. The unidirectional transmission mechanism is connected to the driving motor. The at least one blocking roller is mounted in the feeding path. The at least one blocking roller is disposed to a downstream of the at least one feeding roller. The at least one blocking roller is connected to the unidirectional transmission mechanism.

Abstract: Disclosed in the present invention is complex-phase steel having high hole expansibility. The complex-phase steel has a microstructure of ferrite and bainite. The complex-phase steel having high hole expansibility comprises the following chemical elements in percentage by mass: C: 0.06-0.09%, Si: 0.05-0.5%, Al: 0.02-0.1%, Mn: 1.5-1.8%, Cr: 0.3-0.6%, Nb?0.03%, Ti: 0.05-0.12%, and the balance of Fe and inevitable impurities. In addition, also disclosed in the present invention is a manufacturing method for the foregoing complex-phase steel having high hole expansibility. The method comprises the following steps: (1) smelting and casting; (2) heating; (3) hot-rolling; (4) phosphorous removal; (5) laminar cooling: a relaxation time period is controlled to be 0-8 s, and a laminar cooling rate is 40-70° C./s; (6) coiling; (7) leveling; and (8) pickling. The complex-phase steel having high hole expansibility can simultaneously satisfy the requirements for hole expansibility and good plasticity.

Abstract: Various embodiments provide a battery, a bulk energy storage system including the battery, and/or a method of operating the bulk energy storage system including the battery. In various embodiment, the battery may include a first electrode, an electrolyte, and a second electrode, wherein one or both of the first electrode and the second electrode comprises direct reduced iron (“DRI”). In various embodiments, the DRI may be in the form of pellets. In various embodiments, the pellets may comprise at least about 60 wt % iron by elemental mass, based on the total mass of the pellets. In various embodiments, one or both of the first electrode and the second electrode comprises from about 60% to about 90% iron and from about 1% to about 40% of a component comprising one or more of the materials selected from the group of SiO2, Al2O3, MgO, CaO, and TiO2.

Abstract: A method and an apparatus for transmitting a physical layer protocol data unit that can provide a short training field sequence for a larger channel bandwidth. The short training field sequence has a smaller peak-to-average power ratio PAPR and better performance. The method includes: generating a physical layer protocol data unit PPDU, where the PPDU includes a short training field, a length of a frequency domain sequence of the short training field is greater than a first length, and the first length is a length of a frequency domain sequence of a short training field of a PPDU transmitted on a channel with a bandwidth of 160 MHz; and sending the PPDU on a target channel, where a bandwidth of the target channel is greater than 160 MHz.

Abstract: A wavelength conversion module includes a driving element, a wavelength conversion wheel, and at least one flow guide. The wavelength conversion wheel includes a rotary disc and at least one wavelength conversion layer. The driving element is connected to the rotary disc to drive the wavelength conversion wheel to rotate along an axis of the driving element as a central axis. The flow guide is disposed beside the wavelength conversion wheel at intervals along the axis, and at least one airflow channel is formed between the flow guide and the wavelength conversion wheel. The flow guide and the driving element are disposed at intervals, and the flow guide does not contact the rotary disc and the driving element. An orthographic projection of the flow guide on the rotary disc overlaps the wavelength conversion layer. When the wavelength conversion wheel rotates, the wavelength conversion wheel and the flow guide move relatively.

Abstract: A combined drug contains hypoxanthine and human immunoglobulin (HIg). HIg has a therapeutic effect on radiation injuries, and the combination of hypoxanthine and HIg can further enhance this therapeutic effect. The combination drug can be administered to patients undergoing radiotherapy and to those who accidentally have excessive irradiation.

Abstract: A method includes forming a first semiconductor fin on a substrate, forming a source/drain region in the first semiconductor fin, depositing a capping layer on the source/drain region, where the capping layer includes a first boron concentration higher than a second boron concentration of the source/drain region, etching an opening through the capping layer, the opening exposing the source/drain region, forming a silicide layer on the exposed source/drain region and forming a source/drain contact on the silicide layer.

Abstract: In a first aspect, a polyimide film includes a polyimide derived from a dianhydride and a diamine. The dianhydride includes pyromellitic dianhydride, the diamine includes a benzimidazole, the molar ratio of dianhydride to diamine that forms the polyimide is in a range of from 0.85:1 to 0.99:1, and the polyimide film has a Tg of 400° C. or higher, a tensile modulus of 6.0 GPa or more, and a coefficient of thermal expansion of 15 ppm/° C. or less over a temperature range of 50 to 500° C. In a second aspect, an electronic device includes the polyimide film of the first aspect.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes an array substrate, which includes a substrate, a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer. The substrate has a substrate surface. The first conductive layer is located on the substrate surface. The first insulating layer is located on the first conductive layer. The second conductive layer is located on the first insulating layer and includes a first sputtering layer, a second sputtering layer, and a third sputtering layer. The second insulating layer is located on the second conductive layer. The second sputtering layer is located between the first and third sputtering layers, and includes a first metal element. The first sputtering layer includes the first metal element and a second metal element. The third sputtering layer includes the first metal element and a third metal element.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: A method of generating an IC layout diagram includes receiving a first gate resistance value of a gate region in an IC layout diagram, the first gate resistance value corresponding to a location of a gate via positioned within an active region and along a width of the gate region extending across the active region, determining a second gate resistance value based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.

Abstract: This application provides a data sending/receiving method, an electronic device, and a computer-readable storage medium. In this application, a first device may receive, in a wakeup state, first data sent by a second device; after sending of the first data is completed, the first device enters a sleep state after a first duration; the first device wakes up again after a second duration; the first device may receive, in the wakeup state, second data sent by the second device; and after sending of the second data is completed, the first device enters a sleep mode after a third duration. In this process, the first duration is different from the third duration.

Abstract: An electrostatic discharge (ESD) circuit includes an ESD detection circuit, a clamp circuit and an ESD assist circuit. The ESD detection circuit is coupled between a first and a second node. The first node has a first voltage. The second node has a second voltage. The clamp circuit includes a first transistor having a first gate, a first drain, a first source and a first body terminal. The first gate is coupled to at least the ESD detection circuit by a third node. The first drain is coupled to the second node. The first source and the first body terminal are coupled together at the first node. The ESD assist circuit is coupled between the first node and the third node, and is configured to clamp a third voltage of the third node at the first voltage during an ESD event at the first node or the second node.

Abstract: The present disclosure discloses a method for processing discontinuous reception parameters, a storage medium and a processor. The method includes: user equipment receiving discontinuous reception parameters and parameter values, the discontinuous reception parameters corresponding to different communication parameters being different, or the parameter values of the discontinuous reception parameters corresponding to different communication parameters being different; and the user equipment performing configuration on the basis of the discontinuous reception parameters and the parameter values. The present disclosure solves the technical problems in the related art of being unable to achieve the purpose of power saving as user equipment has a large power consumption when transmitting data (such as a direct communication request (DCR) message or a discovery message) on a sidelink.

Abstract: A substrate and a display device. The substrate includes: a hole region including a plurality of holes penetrating the substrate; and a non-hole region including a plurality of connection portions and a plurality of pixel regions separated from each other. Each connection portion is between adjacent pixel regions to connect the adjacent pixel regions, wherein a straight line in any direction parallel to the substrate passes through the hole region and the plurality of holes include at least two holes having different deformation degrees.

Abstract: A method of UE prioritizing and multiplexing simultaneous sidelink relay data for Logical Channel Prioritization (LCP) procedure in new radio (NR) system is proposed. UE can provide traffic prioritization based on traffic category when UE has simultaneous traffic from more than one traffic categories to transmit. The sidelink relay traffic prioritization is then used for transmission interface and resource selection, and data multiplexing prioritization on the basis of sidelink relay architecture. Specifically, a method on how to perform the corresponding logical channel prioritization (LCP) operation for MAC PDU multiplexing is provided. LCP restriction is considered to determine which classes of traffic can be multiplexed into the same MAC PDU together. Priority of multiplexing is also applied to determine the order and the amount of traffic to be included in the MAC PDU.

Abstract: An electronic device includes a substrate, a plurality of electronic components and a conductive material. The electronic components are arranged on the substrate, and the electronic components respectively include a lower electrode, a semiconductor layer and an upper electrode, and they are sequentially stacked on the substrate. The electronic components share the semiconductor layer, and the semiconductor layer forms a plurality of connecting channels through the semiconductor layer. The connecting channels are located between the upper electrode of the first electronic component in the electronic components and the lower electrode of the second electronic component in the electronic components. These connecting channels are processed by lasers of different powers. The conductive material is arranged in the connecting channel so that the upper electrode of the first electronic component is electrically connected to the lower electrode of the second electronic component.

Abstract: A vertical alignment liquid crystal display module including a vertical alignment liquid crystal display panel and an image color switch film is provided. The image color switch film is disposed on the vertical alignment liquid crystal display panel. In various viewing angle directions having included angles of 60 degrees to 75 degrees with respect to a normal of the image color switch film, the image color switch film has a following optical characteristic: an average transmittance of a visible light transmittance spectrum of the image color switch film at an end of short wavelength is less than an average transmittance of the visible light transmittance spectrum of the image color switch film at an end of long wavelength.

Abstract: A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.

Abstract: Methods for enhancing the immune response and/or treatment of diseases such as cancer comprising an agent that specifically binds TIGIT are disclosed. The TIGIT-binding agents may include polypeptides, antibodies, and/or bispecific agents.