Abstract: An electronic device and a manufacturing method thereof are disclosed. The manufacturing method of the electronic device includes following steps: providing a substrate; forming a first compressible layer on the substrate; forming a first bonding pad on the first compressible layer; providing an electronic component; forming a second bonding pad on the electronic component; and bonding the electronic component with the substrate by contacting the second bonding pad with the first bonding pad.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate, and includes a first electrode and a second electrode. The transistor is disposed on the substrate and electrically connected to the light-emitting element. The transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The first electrode and the second electrode of the light-emitting element do not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 ?m and less than or equal to 5 ?m.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate. The transistor is disposed on the substrate, and includes a drain electrode, a gate electrode, and a semiconductor layer. The drain electrode is electrically connected to the light-emitting element. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The light-emitting element does not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.

Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 ?m and less than or equal to 5 ?m.

Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 ?m and less than or equal to 5 ?m.

Abstract: A display device is provided. The display device includes a substrate, and a light-emitting unit disposed on the substrate. The light-emitting unit includes a first conductive layer overlapping a second conductive layer, a first semiconductor layer disposed between the first conductive layer and the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the first conductive layer, a quantum well structure disposed between the first semiconductor layer and the second semiconductor layer, and a via hole penetrated through the first semiconductor layer and the quantum well structure. The second conductive layer is electrically connected with the second semiconductor layer through a conductive material disposed in the via hole.

Abstract: A light-emitting diode display device is provided, including: a substrate, including a plurality of grooves, wherein an electrical contact is disposed in each of the grooves; and a plurality of light-emitting diodes, configured to be installed in the grooves, wherein each of the light-emitting diodes includes: a main body; and a first contact and a second contact, disposed on the main body, wherein the first contact and the second contact are respectively electrically connected to the substrate through the corresponding electrical contacts.

Abstract: An electronic device is provided. The electronic device includes a substrate, a plurality of thin-film transistors disposed on the substrate, and a plurality of light-emitting units. One of the light-emitting units has an encapsulating glue and at least one light-emitting chip. The encapsulating glue is disposed on the light-emitting chip, and the light-emitting unit is electrically connected to at least one of the thin-film transistors.

Abstract: A light-emitting diode display device includes a light-emitting diode and a substrate. The light-emitting diode includes a central axis, and the substrate includes a first connecting portion and a second connecting portion. The central axis is extended through the first connecting portion. The second connecting portion is disposed outside of the first connecting portion and is spaced apart from the first connecting portion by a distance which is greater than zero, and the first connecting portion and the second connecting portion are respectively electrically connected to the light-emitting diode.

Abstract: A display device is provided, which includes a substrate including a pixel region; a metal oxide semiconductor transistor disposed over the substrate and including: a metal oxide semiconductor layer, a first gate electrode overlapping with the metal oxide semiconductor layer; and a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap; a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the pixel region overlap; and a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate. The transistor is disposed on the substrate, and includes a drain electrode, a gate electrode, and a semiconductor layer. The drain electrode is electrically connected to the light-emitting element. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The light-emitting element does not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: A display device includes a substrate, a first transistor, a second transistor and a conductive connection portion disposed on the substrate. The first transistor is electrically connected to the gate electrode of the second transistor through the conductive connection portion. An insulating layer is disposed on the conductive connection portion. A pixel electrode is disposed on the insulating layer and is electrically connected to the second transistor. The pixel electrode is at least partially overlapped with the conductive connection portion. A light-emitting element is disposed on the pixel electrode. The conductive connection portion and the pixel electrode form a capacitor. The capacitor has an equivalent permittivity and a thickness. The ratio of the equivalent permittivity to the thickness is in a range from 0.4*(1E+5)F/m^2 to 296.48*(1E+5)F/m^2.

Abstract: A display device is provided. The display device includes a substrate, and a light-emitting unit disposed on the substrate. The light-emitting unit includes a first conductive layer overlapping a second conductive layer, a first semiconductor layer disposed between the first conductive layer and the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the first conductive layer, a quantum well structure disposed between the first semiconductor layer and the second semiconductor layer, and a via hole penetrated through the first semiconductor layer and the quantum well structure. The second conductive layer is electrically connected with the second semiconductor layer through a conductive material disposed in the via hole.

Abstract: A display device including a TFT substrate and a display layer is provided. The TFT substrate includes a substrate, a gate layer, a semiconductor layer, a gate dielectric layer, a first electrode layer, a first passivation layer, a second passivation layer, and a second electrode layer. A via penetrates the first passivation layer and the second passivation layer to expose a portion of the first electrode layer, and the via has a sidewall. The second electrode layer is electrically connected to the first electrode layer through the via, the first passivation layer has a first edge on the sidewall of the via, the second passivation layer has a second edge on the sidewall of the via, and the first edge and the second edge are separated by a distance in the range of 500-2000 ?.

Abstract: A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 ?m and less than or equal to 5 ?m.

Abstract: A display device is provided, which includes a substrate including a pixel region; a metal oxide semiconductor transistor disposed over the substrate and including: a metal oxide semiconductor layer, a first gate electrode overlapping with the metal oxide semiconductor layer; and a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap; a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the pixel region overlap; and a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.

Abstract: A display device is provided, which includes a substrate structure containing a substrate with a pixel region, and the pixel region includes an aperture region. A metal oxide semiconductor transistor is disposed over the substrate and includes a metal oxide semiconductor layer with a first channel region, a first gate electrode corresponding to the first channel region, and a silicon oxide insulating layer on the metal oxide semiconductor layer. The silicon oxide insulating layer includes an opening corresponding to the aperture region. A polysilicon transistor is disposed over the substrate. The display device also includes an opposite substrate structure, and a display medium between the substrate structure and the opposite substrate structure.

Abstract: A light-emitting diode display device includes a light-emitting diode and a substrate. The light-emitting diode includes a central axis, and the substrate includes a first connecting portion and a second connecting portion. The central axis is extended through the first connecting portion. The second connecting portion is disposed outside of the first connecting portion and is spaced apart from the first connecting portion by a distance which is greater than zero, and the first connecting portion and the second connecting portion are respectively electrically connected to the light-emitting diode.