Abstract: A memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. The read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line, and a source terminal of the read transistor coupled to a first node. The write transistor is configured to adjust a polarization state of the read transistor, the polarization state corresponding to a stored data value of the memory cell.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A computing system performs shared cache allocation to allocate cache resources to groups of tasks. The computing system monitors the bandwidth at a memory hierarchy device that is at a next level to the cache in a memory hierarchy of the computing system. The computing system estimates a change in dynamic power from a corresponding change in the bandwidth before and after the cache resources are allocated. The allocation of the cache resources are adjusted according to an allocation policy that receives inputs including the estimated change in the dynamic power and a performance indication of task execution.

Abstract: A computing system performs partial cache deactivation. The computing system estimates the leakage power of a cache based on operating conditions of the cache including voltage and temperature. The computing system further identifies a region of the cache as a candidate for deactivation based on cache hit counts. The computing system then adjusts the size of the region for the deactivation based on the leakage power and a bandwidth of a memory hierarchy device. The memory hierarchy device is at the next level to the cache in a memory hierarchy of the computing system.

Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: A display device includes a substrate, a first light emitting element, a second light emitting element, and an optical film sheet. The first light emitting element and the second light emitting element are disposed on the substrate. The first light emitting element emits a first light, and the first light has a first wavelength range. The second light emitting element emits a second light, and the second light has a second wavelength range. The optical film sheet is disposed above the first light emitting element and the second light emitting element. The optical film sheet includes a first zone and a second zone. The first zone includes a first cholesteric liquid crystal, and the first cholesteric liquid crystal reflects light in at least the first wavelength range. The second zone includes a second cholesteric liquid crystal, and the second cholesteric liquid crystal reflects light in at least the second wavelength range.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A data collection system that performs data collection of human-driven robot actions for robot learning. The data collection system includes: i) a wearable computation subsystem that is worn by a human data collector and that controls the data collection process and ii) a human-machine operation interface subsystem that allows the human data collector to use the human-machine operation interface to operate an attached robotic gripper to perform one or more actions. A user interface subsystem receives instructions from the wearable computation subsystem that direct the human data collector to perform the one or more actions using the human-machine operation interface subsystem. A visual sensing subsystem includes one or more cameras that collect raw visual data related to the pose and movement of the robotic gripper while performing the one or more actions. A data collection subsystem receives collected data related to the one or more actions.

Abstract: Monoclonal antibodies against human Mac-1 are provided. These antibodies can bind to different states of Mac-1 so as to alter the biofunctions of Mac-1. These antibodies can modulate Th1/Th2 cytokine secretions by TLR-activated immune cells and can be used for the treatments of diseases related to acute and chronic inflammatory disorders, such as infectious diseases, and cancers.

Abstract: An impedance measurement circuit and an operating method thereof are provided. The impedance measurement circuit includes a current source, a voltage controlled oscillator (VCO), an operation circuit, and a first delay circuit. The current source, electrically connected to a power rail, is able to sink a current from the power rail according to the delayed clock signal. The VCO is configured to generate an oscillation signal according to a power voltage on the power rail. The operation circuit is electrically connected to the VCO and is configured to receive a sampling clock signal and the oscillation signal, sense the power voltage to generate a sampled signal, and accumulate the sampled signal to generate a measurement result. The first delay circuit, electrically connected to the current source and the operation circuit, is able to receive the sampling clock signal and transmit the delayed clock signal to the current source.

Abstract: A wearable device and a method for performing a registration process in the wearable device are provided. The wearable device includes a light source, a light sensor and a microcontroller that performs the method. In the method, the light source is activated to emit a detection light and the light sensor senses a reflected light. A light intensity of the reflected light is calculated. Specifically, an upper limit and a lower limit are referred to for detecting whether the wearable device is properly worn by a person. For example, since the wearable device can be worn on the person's wrist, the registration value is used to detect whether the wearable device is away from the wrist.

Abstract: A light-folding element includes an object-side surface, an image-side surface, a reflection surface and a connection surface. The reflection surface is configured to reflect imaging light passing through the object-side surface to the image-side surface. The connection surface is connected to the object-side, image-side and reflection surfaces. The light-folding element has a recessed structure located at the connection surface. The recessed structure is recessed from the connection surface an includes a top end portion, a bottom end portion and a tapered portion located between the top end and bottom end portions. The top end portion is located at an edge of the connection surface. The tapered portion has two tapered edges located on the connection surface. The tapered edges are connected to the top end and bottom end portions. A width of the tapered portion decreases in a direction from the top end portion towards the bottom end portion.

Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: The battery pack with the plurality of batteries is determined to have been fully charged and set in a stationary state, the discharge operation proceeds according to specified relationships of the voltage of each battery, a first predetermined voltage difference, and a discharge starting voltage, or the balance operation proceeds according to specified relationships of the voltage of each battery, the first predetermined voltage difference, a balance starting voltage and a second predetermined voltage difference.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.

Abstract: An encryption and signature device for AI model protection is provided. The encryption and signature device for AI model protection includes a key derivation unit, a model encryption unit, a model password encryption unit, an image generation unit and a signature unit. The key derivation unit is configured to derive a model key according to a model password and a derivation function. The model encryption unit is configured to encrypt an AI model according to the model key to generate an encrypted AI model. The model password encryption unit is configured to encrypt the model password to generate an encrypted model password. The image generation unit is configured to generate an image file according to the encrypted model password and the encrypted AI model. The signature unit is configured to sign the image file according to a private key to obtain a signed image file.