Abstract: Provided are an integrated circuit (IC) and a method of forming the same. The IC includes a substrate; a conductive layer, disposed on the substrate; a barrier layer, disposed on the conductive layer; an etching stop layer, covering a sidewall of the barrier layer and extending on a first portion of a top surface of the barrier layer; and at least one capacitor structure, disposed on a second portion of the top surface of the barrier layer.

Abstract: A bendable positioning structure of an outlet pipe for a faucet contains a body, a spring tube, and a flexible connection tube. The body includes a columnar holder, the outlet pipe, and a fixer. The spring tube is fitted in the outlet pipe and is stopped and positioned by the fixer. The spring tube includes a large-diameter portion and a small-diameter portion which are alternatively formed along the spring tube. The flexible connection tube is slidably received in the spring tube to be limited by the small-diameter portion of the spring tube so that the flexible connection tube is fixed on a centrally-axial line of the output tube. An outer wall of an end of the flexible connection tube is connected with a water head, and the water head is engaged on the outlet pipe and is pulled outward with the flexible connection tube based on user requirements.

Abstract: Provided is an integrated fan-out (InFO) package structure including a first die, a second die, a third die, a protective layer, and an interconnect structure. The first die has a first surface and a second surface opposite to each other. The first die has a plurality of through substrate vias (TSVs) protruding from the second surface. The second die and the third die are bonded on the first surface of the first die. The protective layer laterally surrounds protrusions of the plurality of TSVs that protrude from the second surface. The interconnect structure are disposed on the protective layer and electrically connected to the plurality of TSVs. The interconnect structure includes a polymer layer covering the protective layer.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

Abstract: Provided is an integrated fan-out (InFO) package structure including a first die, a second die, a third die, a protective layer, and an interconnect structure. The first die has a first surface and a second surface opposite to each other. The first die has a plurality of through substrate vias (TSVs) protruding from the second surface. The second die and the third die are bonded on the first surface of the first die. The protective layer laterally surrounds protrusions of the plurality of TSVs that protrude from the second surface. The interconnect structure are disposed on the protective layer and electrically connected to the plurality of TSVs. The interconnect structure includes a polymer layer covering the protective layer.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

Abstract: A configuration management system tracks the configuration of a managed computing environment in accordance with a configuration tracking policy. The configuration management system uses the tracking policy to map configuration information from the managed computing environment to a hierarchy of configuration items. Items may be included or excluded from the hierarchy based on relevance to the tracking policy and a predicted amount of dynamism. A signature of the hierarchy is generated. A change to the configuration environment is detected based on a change to the signature, and an action is performed in response to the detected change.

Abstract: Some implementations described herein provide techniques and apparatuses for polishing a perimeter region of a semiconductor substrate so that a roll-off profile at or near the perimeter region of the semiconductor substrate satisfies a threshold. The described implementations include depositing a first layer of a first oxide material across the semiconductor substrate followed by depositing a second layer of a second oxide material over the first layer of the first oxide material and around a perimeter region of the semiconductor substrate. The described implementations further include polishing the second layer of the second oxide material over the perimeter region using a chemical mechanical planarization tool including one or more ring-shaped polishing pads oriented vertically over the perimeter region.

Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor. The pixel sensor includes a substrate having a front-side opposite a back-side. An image sensor element comprises an active layer disposed within the substrate, where the active layer comprises germanium. An anti-reflective coating (ARC) structure overlies the back-side of the substrate. The ARC structure includes a first dielectric layer overlying the back-side of the substrate, a second dielectric layer overlying the first dielectric layer, and a third dielectric layer overlying the second dielectric layer. A first index of refraction of the first dielectric layer is less than a second index of refraction of the second dielectric layer, and a third index of refraction of the third dielectric layer is less than the first index of refraction.

Abstract: A fan structure automatically mountable on a system circuit board includes a fan. The fan includes a fan frame main body. A connector connection section is disposed on the fan frame main body for connecting with a fan end connector, whereby the fan end connector can be assembled with the fan frame main body. Accordingly, when the fan is mounted on the system circuit board, the fan end connector can be directly pressed down by means of an automated device to plug into the circuit board end connector. Therefore, the manufacturing process can be automated.

Abstract: In some embodiments, the present disclosure relates to a method that includes bonding a first wafer to a second wafer to form a wafer stack and removing a top portion of the second wafer. A first trim blade having a first blade width is aligned over the second wafer. The first trim blade is used to form a trench that separates a central portion of the second wafer from a peripheral portion of the second wafer. The trench is arranged at a first distance from an outer perimeter of the second wafer, and extends from a top surface of the second wafer to a trench depth beneath the top surface of the first wafer. A second trim blade having a second blade width is aligned over the peripheral portion, the second blade width being greater than the first blade width. The peripheral portion is removed using the second trim blade.

Abstract: A telescopic structure of a faucet having a movable tube contains: a body, a water supply tube, a movable tube, a spring, and a depressurization element. The body includes a screwing portion, a coupling portion, and a water outlet. The water supply includes an upright extension and an opening. The movable tube includes a slide portion and a water head engaged with the opening of the water supply tube and is pulled with the movable tube based on using requirements. The spring is accommodated in the upright extension and is fitted on the movable tube. The depressurization element includes a first face, a second face opposite to the first face, a peripheral face defined between and connected with the first face and the second face, and multiple flowing apertures defined proximate to a center of the depressurization element and communicating with the first face and the second face.

Abstract: A fan connector structure is applicable to a system circuit board having a circuit board-end connector provided thereon and includes a fan having a fan frame main body and a fan-end connector projected from an outer side of the fan frame main body. The fan-end connector and the fan frame main body can be selectively integrally or non-integrally formed with each other. The fan-end connector is correspondingly connectable to the circuit board-end connector, so as to realize the purpose of automated and quick assembling of the fan to the system circuit board with less labor and time cost.

Abstract: The present disclosure relates to a semiconductor wafer structure including a semiconductor substrate and a plurality of semiconductor devices disposed along the semiconductor substrate. A dielectric stack including a plurality of dielectric layers is arranged over the semiconductor substrate. A conductive interconnect structure is within the dielectric stack. A seal ring layer is over the dielectric stack and laterally surrounds the dielectric stack along a first sidewall of the dielectric stack. The seal ring layer includes a first protrusion that extends into a first trench in the semiconductor substrate.

Abstract: A method of making a semiconductor arrangement includes forming a first layer of molecular ions in a first wafer interface region of a first wafer, forming a second layer of molecular ions in a second wafer interface region of a second wafer, forming a first molecular bond connecting the first wafer interface region to the second wafer interface region by applying pressure to at least one of the first wafer or the second wafer in a direction toward the first wafer interface region and the second wafer interface region, and annealing the first wafer and the second wafer to form a second molecular bond connecting the first wafer interface region to the second wafer interface region.

Abstract: A semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; and a magnetic core in the second passivation layer, wherein the magnetic core includes a first magnetic material layer and a second magnetic material layer over the first magnetic material layer, the first magnetic material layer and the second magnetic material layer are separated by a high resistance isolation layer, and the high resistance isolation layer has a resistivity greater than about 1.3 ohm-cm.

Abstract: A bonded assembly of a first wafer including a first semiconductor substrate and a second wafer including a second semiconductor substrate may be formed. The second semiconductor substrate may be thinned to a first thickness, and an inter-wafer moat trench may be formed at a periphery of the bonded assembly. A protective material layer may be formed in the inter-wafer moat trench and over the backside surface of the second semiconductor substrate. A peripheral portion of the second semiconductor substrate located outside the inter-wafer moat trench may be removed, and a cylindrical portion of the protective material layer laterally surrounds a remaining portion of the bonded assembly. The second semiconductor substrate may be thinned to a second thickness by performing at least one thinning process while the cylindrical portion of the protective material layer protects the remaining portion of the bonded assembly.

Abstract: A spindle device is mountable with a tool holder, and includes a rotating spindle rotatably mounted to a spindle main body and extending axially to have an axial end surface. A contactless power transmission module is disposed on a flange end surface of the spindle main body and an outer peripheral wall of the rotating spindle for supplying power. An electrically connecting module includes two conductive units each disposed in the rotating spindle and electrically connected with the power transmission module. Each conductive unit has an electrically conductive post extending axially and exposed from the axial end surface for conducting the power to the tool holder.

Abstract: A fan connector structure is applicable to a system circuit board having a circuit board-end connector provided thereon and includes a fan having a fan frame main body and a fan-end connector projected from an outer side of the fan frame main body. The fan-end connector and the fan frame main body can be selectively integrally or non-integrally formed with each other. The fan-end connector is correspondingly connectable to the circuit board-end connector, so as to realize the purpose of automated and quick assembling of the fan to the system circuit board with less labor and time cost.