Patents by Inventor Ming-Chien Tsai
Ming-Chien Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230342272Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hung CHANG, Atul KATOCH, Chia-En HUANG, Ching-Wei WU, Donald G. MIKAN, JR., Hao-I YANG, Kao-Cheng LIN, Ming-Chien TSAI, Saman M.I. ADHAM, Tsung-Yung CHANG, Uppu Sharath CHANDRA
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Patent number: 11734142Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.Type: GrantFiled: February 18, 2022Date of Patent: August 22, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hung Chang, Atul Katoch, Chia-En Huang, Ching-Wei Wu, Donald G. Mikan, Jr., Hao-I Yang, Kao-Cheng Lin, Ming-Chien Tsai, Saman M. I. Adham, Tsung-Yung Chang, Uppu Sharath Chandra
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Publication number: 20220171688Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.Type: ApplicationFiled: February 18, 2022Publication date: June 2, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hung CHANG, Atul KATOCH, Chia-En HUANG, Ching-Wei WU, Donald G. MIKAN, JR., Hao-I YANG, Kao-Cheng LIN, Ming-Chien TSAI, Saman M.I. ADHAM, Tsung-Yung CHANG, Uppu Sharath CHANDRA
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Patent number: 11256588Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.Type: GrantFiled: May 29, 2020Date of Patent: February 22, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hung Chang, Atul Katoch, Chia-En Huang, Ching-Wei Wu, Donald G. Mikan, Jr., Hao-I Yang, Kao-Cheng Lin, Ming-Chien Tsai, Saman M. I. Adham, Tsung-Yung Chang, Uppu Sharath Chandra
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Publication number: 20200293417Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.Type: ApplicationFiled: May 29, 2020Publication date: September 17, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hung CHANG, Atul KATOCH, Chia-En HUANG, Ching-Wei WU, Donald G. MIKAN, JR., Hao-I YANG, Kao-Cheng LIN, Ming-Chien TSAI, Saman M.I. ADHAM, Tsung-Yung CHANG, Uppu Sharath CHANDRA
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Patent number: 10705934Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.Type: GrantFiled: September 11, 2017Date of Patent: July 7, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hung Chang, Atul Katoch, Chia-En Huang, Ching-Wei Wu, Donald G. Mikan, Jr., Hao-I Yang, Kao-Cheng Lin, Ming-Chien Tsai, Saman M. I. Adham, Tsung-Yung Chang, Uppu Sharath Chandra
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Publication number: 20190004915Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.Type: ApplicationFiled: September 11, 2017Publication date: January 3, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Hung CHANG, Atul KATOCH, Chia-En HUANG, Ching-Wei WU, Donald G. MIKAN, JR., Hao-I YANG, Kao-Cheng LIN, Ming-Chien TSAI, Saman M.I ADHAM, Tsung-Yung CHANG, Uppu Sharath CHANDRA
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Patent number: 9978443Abstract: A method includes: during a read operation of a first storage node and a second storage node formed by cross-coupled inverters, based on data stored in the first storage node and the second storage node, causing a first auxiliary branch or a second auxiliary branch to assist a corresponding one of the cross-coupled inverters in holding data; and during a write operation of the first storage node and the second storage node, based on data to be written to the first storage node and the second storage node, causing the first auxiliary branch or the second auxiliary branch to assist a corresponding one of the cross-coupled inverters in flipping data.Type: GrantFiled: January 13, 2016Date of Patent: May 22, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chen-Lin Yang, Ming-Chien Tsai, Chung-Yi Wu, Cheng Hung Lee
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Patent number: 9389786Abstract: A memory device includes storage layers each comprising memory cells arranged in a plurality of rows, bit lines coupled to the memory cells in the corresponding rows, tracking cells arranged in at least one row, at least one tracking bit line coupled to the tracking cells, and at least one sense amplifier coupled to the bit lines. The sense amplifier is configured to detect data stored in the memory cells, and has an enabling terminal coupled to the at least one tracking bit line. The memory device further comprises word lines and tracking word lines extending through the storage layers. The word lines are coupled to the corresponding memory cells in the storage layers. The tracking word lines are coupled to the corresponding tracking cells in the storage layers.Type: GrantFiled: June 10, 2014Date of Patent: July 12, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming-Chien Tsai, Yu-Hao Hsu, Chih-Yu Lin, Chen-Lin Yang, Cheng Hung Lee
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Publication number: 20160125934Abstract: A method includes: during a read operation of a first storage node and a second storage node formed by cross-coupled inverters, based on data stored in the first storage node and the second storage node, causing a first auxiliary branch or a second auxiliary branch to assist a corresponding one of the cross-coupled inverters in holding data; and during a write operation of the first storage node and the second storage node, based on data to be written to the first storage node and the second storage node, causing the first auxiliary branch or the second auxiliary branch to assist a corresponding one of the cross-coupled inverters in flipping data.Type: ApplicationFiled: January 13, 2016Publication date: May 5, 2016Inventors: Chen-Lin Yang, Ming-Chien Tsai, Chung-Yi Wu, Cheng Hung Lee
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Patent number: 9263122Abstract: A circuit includes a first inverter, a second inverter, a first auxiliary branch and a second auxiliary branch. The first and second inverters are cross-coupled to form a first storage node and a second storage node. The first auxiliary branch is coupled to the first storage node and configured to assist the first inverter in holding data based on data stored at the second storage node during a read operation, and assist the first inverter in flipping data based on data to be written to the first storage node during a write operation. The second auxiliary branch is coupled to the second storage node and configured to assist the second inverter in holding data based on data stored in the first storage node during the read operation, and assist the second inverter in flipping data based on data to be written to the second storage node during the write operation.Type: GrantFiled: October 21, 2013Date of Patent: February 16, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chen-Lin Yang, Ming-Chien Tsai, Chung-Yi Wu, Cheng Hung Lee
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Publication number: 20150277770Abstract: A memory device includes storage layers each comprising memory cells arranged in a plurality of rows, bit lines coupled to the memory cells in the corresponding rows, tracking cells arranged in at least one row, at least one tracking bit line coupled to the tracking cells, and at least one sense amplifier coupled to the bit lines. The sense amplifier is configured to detect data stored in the memory cells, and has an enabling terminal coupled to the at least one tracking bit line. The memory device further comprises word lines and tracking word lines extending through the storage layers. The word lines are coupled to the corresponding memory cells in the storage layers. The tracking word lines are coupled to the corresponding tracking cells in the storage layers.Type: ApplicationFiled: June 10, 2014Publication date: October 1, 2015Inventors: Ming-Chien TSAI, Yu-Hao HSU, Chih-Yu LIN, Chen-Lin YANG, Cheng Hung LEE
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Patent number: 9111595Abstract: A memory includes a clock generator for providing a first clock signal responsive to a second clock signal and a feedback signal. A feedback loop provides the feedback signal and includes a tracking wordline, a tracking bitline, a tracking bit cell, and a tracking wordline driver for driving the tracking wordline responsive to the first clock signal. The memory includes a tracking wordline level tuner for reducing a voltage level of a tracking wordline signal on the tracking wordline responsive to a weak bit control signal.Type: GrantFiled: May 29, 2013Date of Patent: August 18, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Hao Hsu, Ming-Chien Tsai, Chen-Lin Yang
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Publication number: 20150109852Abstract: A circuit includes a first inverter, a second inverter, a first auxiliary branch and a second auxiliary branch. The first and second inverters are cross-coupled to form a first storage node and a second storage node. The first auxiliary branch is coupled to the first storage node and configured to assist the first inverter in holding data based on data stored at the second storage node during a read operation, and assist the first inverter in flipping data based on data to be written to the first storage node during a write operation. The second auxiliary branch is coupled to the second storage node and configured to assist the second inverter in holding data based on data stored in the first storage node during the read operation, and assist the second inverter in flipping data based on data to be written to the second storage node during the write operation.Type: ApplicationFiled: October 21, 2013Publication date: April 23, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: CHEN-LIN YANG, MING-CHIEN TSAI, CHUNG-YI WU, CHENG HUNG LEE
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Publication number: 20140269141Abstract: A memory includes a clock generator for providing a first clock signal responsive to a second clock signal and a feedback signal. A feedback loop provides the feedback signal and includes a tracking wordline, a tracking bitline, a tracking bit cell, and a tracking wordline driver for driving the tracking wordline responsive to the first clock signal. The memory includes a tracking wordline level tuner for reducing a voltage level of a tracking wordline signal on the tracking wordline responsive to a weak bit control signal.Type: ApplicationFiled: May 29, 2013Publication date: September 18, 2014Inventors: Yu-Hao HSU, Ming-Chien TSAI, Chen-Lin YANG
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Patent number: 8804445Abstract: The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.Type: GrantFiled: May 31, 2012Date of Patent: August 12, 2014Assignee: National Chiao Tung UniversityInventors: Ching-Te Chuang, Shyh-Jye Jou, Wei Hwang, Ming-Chien Tsai, Yi-Wei Lin, Hao-I Yang, Ming-Hsien Tu, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee
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Publication number: 20130301343Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.Type: ApplicationFiled: August 29, 2012Publication date: November 14, 2013Inventors: Ching-Te Chuang, Shyh-Jye Jou, Geng-Cing Lin, Shao-Cheng Wang, Yi-Wei Lin, Ming-Chien Tsai, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Jyun-Kai Chu
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Patent number: 8582378Abstract: A threshold voltage measurement device is disclosed. The device is coupled to a 6T SRAM. The SRAM comprises two inverters each coupled to a FET. Power terminals of one inverter are in a floating state; the drain and source of the FET coupled to the inverter are short-circuited. Two voltage selectors, a resistor, an amplifier and the SRAM are connected in a negative feedback way. Different bias voltages are applied to the SRAM for measuring threshold voltages of two FETs of the other inverter and the FET coupled to the other inverter. The present invention uses a single circuit to measure the threshold voltages of the three FETs without changing the physical structure of the SRAM. Thereby is accelerated the measurement and decreased the cost of the fabrication process and measurement instruments.Type: GrantFiled: August 29, 2012Date of Patent: November 12, 2013Assignee: National Chiao Tung UniversityInventors: Ching-Te Chuang, Shyh-Jye Jou, Geng-Cing Lin, Shao-Cheng Wang, Yi-Wei Lin, Ming-Chien Tsai, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Jyun-Kai Chu
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Publication number: 20130223136Abstract: The present invention provides a 6T SRAM including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor. The first inverter zs a first pull-up transistor and a first pull-down transistor. The second inverter includes a second pull-up transistor and a second pull-down transistor. The gate of the second pull-up transistor is coupled with the gate of the second pull-down transistor, and the drain of the second pull-up transistor is coupled with the drain of the second pull-down transistor. The SRAM can measure the trip voltage, the read disturb voltage, and the write margin by controlling the first bit line, the second bit line, the GND, the first word line, and the voltage source without changing of the physic parameter of the SRAM.Type: ApplicationFiled: May 31, 2012Publication date: August 29, 2013Applicant: National Chiao Tung UniversityInventors: Ching-Te CHUANG, Shyh-Jye Jou, Wei Hwang, Yi-Wei Lin, Ming-Chien Tsai, Hao-I Yang, Ming-Hsien Tu, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee
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Publication number: 20130222071Abstract: The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.Type: ApplicationFiled: May 31, 2012Publication date: August 29, 2013Applicant: National Chiao Tung UniversityInventors: Ching-Te Chuang, Shyh-Jye Jou, Wei Hwang, Ming-Chien Tsai, Yi-Wei Lin, Hao-I Yang, Ming-Hsien Tu, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee