Patents by Inventor Ming-Fa Chen

Ming-Fa Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11031354
    Abstract: A method includes forming an interposer, which includes a semiconductor substrate, and an interconnect structure over the semiconductor substrate. The method further includes bonding a device die to the interposer, so that a first metal pad in the interposer is bonded to a second metal pad in the device die, and a first surface dielectric layer in the interposer is bonded to a second surface dielectric layer in the device die. The method further includes encapsulating the device die in an encapsulating material, forming conductive features over and electrically coupling to the device die, and removing the semiconductor substrate. A part of the interposer, the device die, and portions of the conductive features in combination form a package.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: June 8, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Hsien-Wei Chen, Chih-Chia Hu, Chen-Hua Yu
  • Patent number: 11024605
    Abstract: In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: June 1, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Tzuan-Horng Liu, Chao-Wen Shih, Sung-Feng Yeh, Nien-Fang Wu
  • Patent number: 11018066
    Abstract: A package and a method of forming the same are provided. The package includes: a die stack bonded to a carrier, the die stack including a first integrated circuit die, the first integrated circuit die being a farthest integrated circuit die of the die stack from the carrier, a front side of the first integrated circuit die facing the carrier; a die structure bonded to the die stack, the die structure including a second integrated circuit die, a backside of the first integrated circuit die being in physical contact with a backside of the second integrated circuit die, the backside of the first integrated circuit die being opposite the front side of the first integrated circuit die; a heat dissipation structure bonded to the die structure adjacent the die stack; and an encapsulant extending along sidewalls of the die stack and sidewalls of the heat dissipation structure.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: May 25, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Chen-Hua Yu
  • Patent number: 11018104
    Abstract: A semiconductor structure includes a first substrate, a first dielectric layer disposed over the first substrate, a plurality of first bonding pads disposed in the first dielectric layer, a plurality of second bonding pads disposed in the first dielectric layer, a second substrate, and a second dielectric layer disposed over the second substrate. The first bonding pads have a first width. The second bonding pads have a second width greater than the first width. The second bonding pads are arranged to form a frame pattern surrounding the first bonding pads. A portion of the second dielectric layer is in physical contact with the second bonding pads. The first bonding pads and the second bonding pads are arranged to form a plurality of columns and a plurality of rows. Two of the second bonding pads are disposed at two opposite ends of each column and two opposite ends of each row.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ming-Fa Chen, Hsien-Wei Chen
  • Publication number: 20210151412
    Abstract: A package and a method of forming the same are provided. A method includes forming a first die structure. The first die structure includes a die stack and a stacked dummy structure bonded to a carrier. A second die structure is formed. The second die structure includes a first integrated circuit die. The first die structure is bonded to the second die structure by bonding a topmost integrated circuit die of the die stack to the first integrated circuit die. The topmost integrated circuit die of the die stack is a farthest integrated circuit die of the die stack from the carrier. A singulation process is performed on the first die structure to form a plurality of individual die structures. The singulation process singulates the stacked dummy structure into a plurality of individual stacked dummy structures.
    Type: Application
    Filed: January 4, 2021
    Publication date: May 20, 2021
    Inventors: Ming-Fa Chen, Hsien-Wei Chen, Chen-Hua Yu
  • Publication number: 20210134685
    Abstract: A method includes the following steps. A semiconductor wafer including integrated circuit components, seal rings respectively encircling the integrated circuit components and testing structures disposed between the seal rings is provided. A first wafer saw process is performed at least along a first path to singulate the semiconductor wafer into a plurality of first singulated integrated circuit components each including a testing structure among the testing structures. When performing the first wafer saw process, testing pads of the testing structures are located beside the first path, such that a testing pad of a corresponding one of the testing structures in the first singulated integrated circuit component is laterally spaced apart from a sidewall of the first singulated integrated circuit component by a distance.
    Type: Application
    Filed: July 1, 2020
    Publication date: May 6, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Ying-Ju Chen
  • Publication number: 20210134704
    Abstract: A package structure including a first semiconductor die, a first insulating encapsulation, a bonding enhancement film, a second semiconductor die and a second insulating encapsulation is provided. The first insulating encapsulation laterally encapsulates a first portion of the first semiconductor die. The bonding enhancement film is disposed on a top surface of the first insulating encapsulation and laterally encapsulates a second portion of the first semiconductor die, wherein a top surface of the bonding enhancement film is substantially leveled with a top surface of the semiconductor die. The second semiconductor die is disposed on and bonded to the first semiconductor die and the bonding enhancement film. The second insulating encapsulation laterally encapsulates the second semiconductor die.
    Type: Application
    Filed: April 23, 2020
    Publication date: May 6, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsien-Wei Chen, Jie Chen, Ming-Fa Chen, Sung-Feng Yeh
  • Patent number: 10998293
    Abstract: Semiconductor packages and methods of forming the same are disclosed. One of the methods includes the following steps. A first die is provided, wherein the first die comprises a first substrate, a first interconnect structure over the first substrate, and a first pad disposed over and electrically connected to the first interconnect structure. A first bonding dielectric layer is formed over the first die to cover the first die. By using a single damascene process, a first bonding via penetrating the first bonding dielectric layer is formed, to electrically connect the first interconnect structure.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: May 4, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Wei Chen, Jie Chen, Ming-Fa Chen, Ching-Jung Yang
  • Publication number: 20210118832
    Abstract: A method includes polishing a semiconductor substrate of a first die to reveal first through-vias that extend into the semiconductor substrate, forming a dielectric layer on the semiconductor substrate, and forming a plurality of bond pads in the dielectric layer. The plurality of bond pads include active bond pads and dummy bond pads. The active bond pads are electrically coupled to the first through-vias. The first die is bonded to a second die, and both of the active bond pads and the dummy bond pads are bonded to corresponding bond pads in the second die.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Chih-Chia Hu
  • Publication number: 20210118827
    Abstract: A semiconductor package includes a first die and a second die. The first die includes a first spiral section and first bonding metallurgies of an inductor. The first bonding metallurgies are connected to the first spiral section. The second die is bonded to the first die. The second die includes a second spiral section and second bonding metallurgies of the inductor. The second bonding metallurgies are connected to the second spiral section. The inductor extends from the first die to the second die.
    Type: Application
    Filed: October 17, 2019
    Publication date: April 22, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsien-Wei Chen, Ming-Fa Chen, Sen-Bor Jan, Chih-Chia Hu
  • Patent number: 10978410
    Abstract: A semiconductor structure includes a first substrate; a second substrate, disposed over the first substrate; a die, disposed over the second substrate; a via, extending through the second substrate and electrically connecting to the die; a redistribution layer (RDL) disposed between the first substrate and the second substrate, including a dielectric layer, a first conductive structure electrically connecting to the via, and a second conductive structure surrounding the first conductive structure, wherein the second conductive structure extends along an edge of the dielectric layer and penetrates through the dielectric layer; and a first underfill material, disposed between the first substrate and the RDL, wherein one end of the second conductive structure exposed through the dielectric layer is entirely in contact with the first underfill material.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: April 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tzuan-Horng Liu, Hsien-Wei Chen, Ming-Fa Chen
  • Patent number: 10971417
    Abstract: Disclosed herein is a package comprising a first die having a first redistribution layer (RDL) disposed on a first side of a first substrate and a second die having a second RDL disposed on a first side of a second substrate, with the first RDL bonded to the second RDL. A third die having a third RDL is disposed on a first side of a third substrate, the third die mounted over the second die, with the second die disposed between the first die and the third die. First vias extend through, and are electrically isolated from, the second substrate, with the first vias each contacting a conductive element in the first RDL or the second RDL. Second vias extend through, and are electrically isolated from, the third substrate, with the second vias each contacting a conductive element in the third RDL or one of the first vias.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: April 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Ming-Fa Chen, Wen-Sen Lu, Wen-Chih Chiou, Wen-Ching Tsai
  • Patent number: 10971443
    Abstract: A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, forming stacked vias in the plurality of dielectric layers with the stacked vias forming a continuous electrical connection penetrating through the plurality of dielectric layers, forming a dielectric layer over the stacked vias and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: April 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen, Hsien-Wei Chen
  • Publication number: 20210098420
    Abstract: A structure including stacked substrates, a first semiconductor die, a second semiconductor die, and an insulating encapsulation is provided. The first semiconductor die is disposed over the stacked substrates. The second semiconductor die is stacked over the first semiconductor die. The insulating encapsulation includes a first encapsulation portion encapsulating the first semiconductor die and a second encapsulation portion encapsulating the second semiconductor die.
    Type: Application
    Filed: June 9, 2020
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210098380
    Abstract: A package includes a redistribution structure, a die package on a first side of the redistribution structure including a first die connected to a second die by metal-to-metal bonding and dielectric-to-dielectric bonding, a dielectric material over the first die and the second die and surrounding the first die, and a first through via extending through the dielectric material and connected to the first die and a first via of the redistribution structure, a semiconductor device on the first side of the redistribution structure includes a conductive connector, wherein a second via of the redistribution structure contacts the conductive connector of the semiconductor device, a first molding material on the redistribution structure and surrounding the die package and the semiconductor device, and a package through via extending through the first molding material to contact a third via of the redistribution structure.
    Type: Application
    Filed: March 19, 2020
    Publication date: April 1, 2021
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Hsien-Wei Chen
  • Publication number: 20210098409
    Abstract: A package structure including at least one die laterally encapsulate by an encapsulant, a bonding film and an interconnect structure is provided. The bonding film is located on a first side of the encapsulant, and the bonding film includes a first alignment mark structure. The package structure further includes a semiconductor material block located on the bonding film. The interconnect structure is located on a second side of the encapsulant opposite to the first side, and the interconnect structure includes a second alignment mark structure. A location of the first alignment mark structure vertically aligns with a location of the second alignment mark structure.
    Type: Application
    Filed: May 19, 2020
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Hsien-Wei Chen, Jie Chen, Sen-Bor Jan, Sung-Feng Yeh
  • Publication number: 20210098423
    Abstract: A package structure includes a first die, a second die, an insulation structure, a through via, a dielectric layer and a redistribution layer. The second die is electrically bonded to the first die. The insulation structure is disposed on the first die and laterally surrounds the second die. The through via penetrates through the insulation structure to electrically connect to the first die. The through via includes a first barrier layer and a conductive post on the first barrier layer. The dielectric layer is on the second die and the insulation structure. The redistribution layer is embedded in the dielectric layer and electrically connected to the through via. The redistribution layer includes a second barrier layer and a conductive layer on the second barrier layer. The conductive layer of the redistribution layer is in contact with the conductive post of the through via.
    Type: Application
    Filed: January 8, 2020
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsien-Wei Chen, Ching-Jung Yang, Ming-Fa Chen, Sung-Feng Yeh, Ying-Ju Chen
  • Publication number: 20210098323
    Abstract: A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Inventors: Chen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen, Hsien-Wei Chen, Tzuan-Horng Liu
  • Publication number: 20210091022
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an integrated circuit (IC) component, an insulating layer laterally encapsulating sidewalls of the IC component, a redistribution structure disposed on the insulating layer and the IC component, and a warpage control portion coupling to a back side of the IC component opposite to the redistribution structure. The redistribution structure is electrically connected to the IC component. The warpage control portion includes a substrate, a patterned dielectric layer disposed between the substrate and the IC component, and a metal pattern embedded in the patterned dielectric layer and electrically isolated from the IC component.
    Type: Application
    Filed: July 1, 2020
    Publication date: March 25, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Hsien-Wei Chen, Jie Chen
  • Publication number: 20210091084
    Abstract: A semiconductor device and method of manufacture are provided wherein the semiconductor device includes a first system on chip device bonded to a first memory device, a second system on chip device bonded to the first memory device, a first encapsulant surrounding the first system on chip device and the second system on chip device, a second encapsulant surrounding the first system on chip device, the second system on chip device, and the first memory device, and a through via extending from a first side of the second encapsulant to a second side of the first encapsulant, the through via being located outside of the first encapsulant.
    Type: Application
    Filed: March 2, 2020
    Publication date: March 25, 2021
    Inventors: Chen-Hua Yu, Hsien-Wei Chen, Wen-Chih Chiou, Ming-Fa Chen, Sung-Feng Yeh