Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: An overlay mark includes a first feature extending in an X-direction, wherein the first feature is a first distance from a substrate. The overlay mark further includes a second feature extending in a Y-direction perpendicular to the X-direction, wherein the second feature is a second distance from the substrate, and the second distance is different from the first distance, wherein at least one of the first feature or the second feature comprises a conductive material. The overlay mark further includes a third feature extending in the X-direction and the Y-direction, wherein the third feature is a third distance from the substrate, and the third distance is different from the first distance and the second distance. The first distance, the second distance and the third distance from the substrate are along a Z-direction perpendicular to both the X-direction and the Y-direction.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: A method includes forming a first layer on a substrate; forming a first plurality of trenches in the first layer by a patterning process; and forming a second plurality of trenches in the first layer by another patterning process, resulting in combined trench patterns in the first layer. A first trench of the second plurality connects two trenches of the first plurality. The method further includes forming dielectric spacer features on sidewalls of the combined trench patterns. A space between two opposing sidewalls of the first trench is completely filled by the dielectric spacer features and another space between two opposing sidewalls of one of the two trenches is partially filled by the dielectric spacer features.

Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first conductive feature and a second conductive feature are provided. A first hard mask (HM) is formed on the first conductive feature. A patterned dielectric layer is formed over the first and the second conductive features, with first openings to expose the second conductive features. A first metal plug is formed in the first opening to contact the second conductive features. A second HM is formed on the first metal plugs and another patterned dielectric layer is formed over the substrate, with second openings to expose a subset of the first metal plugs and the first conductive features. A second metal plug is formed in the second openings.

Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: A device includes a diffraction-based overlay (DBO) mark having an upper-layer pattern disposed over a lower-layer pattern, and having smallest dimension greater than about 5 micrometers. The device further includes a calibration mark having an upper-layer pattern disposed over a lower-layer pattern, positioned substantially at a center of the DBO mark, and having smallest dimension less than about 1/5 the size of the smallest dimension of the DBO mark.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, a groove pattern is formed in the hard mask layer, one or more first resist layers are formed over the hard mask layer having the groove pattern, a first photo resist pattern is formed over the one or more first resist layers, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer with the groove pattern are patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: Semiconductor processing apparatuses and methods are provided in which a semiconductor wafer is flipped and then rotated between patterning of front and back sides of the semiconductor wafer by first and second reticles, respectively. In some embodiments, a method includes patterning, by a first reticle, a first layer on a first side of a semiconductor wafer while the first side of the semiconductor wafer is facing a first direction. The semiconductor wafer is then flipped. A second side of the semiconductor wafer that is opposite the first side faces the first direction after the flipping the semiconductor wafer. The semiconductor wafer is then rotated about a rotational axis extending along the first direction, and a second layer on the second side of the semiconductor wafer is patterned by a second reticle.

Abstract: Semiconductor processing apparatuses and methods are provided in which a semiconductor wafer is flipped and then rotated between patterning of front and back sides of the semiconductor wafer by first and second reticles, respectively. In some embodiments, a method includes patterning, by a first reticle, a first layer on a first side of a semiconductor wafer while the first side of the semiconductor wafer is facing a first direction. The semiconductor wafer is then flipped. A second side of the semiconductor wafer that is opposite the first side faces the first direction after the flipping the semiconductor wafer. The semiconductor wafer is then rotated about a rotational axis extending along the first direction, and a second layer on the second side of the semiconductor wafer is patterned by a second reticle.

Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: An overlay mark includes a first feature extending in an X-direction, wherein the first feature is a first distance from a substrate. The overlay mark further includes a second feature extending in a Y-direction perpendicular to the X-direction, wherein the second feature is a second distance from the substrate, and the second distance is different from the first distance, wherein at least one of the first feature or the second feature comprises a conductive material. The overlay mark further includes a third feature extending in the X-direction and the Y-direction, wherein the third feature is a third distance from the substrate, and the third distance is different from the first distance and the second distance. The first distance, the second distance and the third distance from the substrate are along a Z-direction perpendicular to both the X-direction and the Y-direction.

Abstract: A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.

Abstract: An overlay mark includes a first feature extending in an X-direction, wherein the first feature is a first distance from a substrate. The overlay mark further includes a second feature extending in a Y-direction perpendicular to the X-direction, wherein the second feature is a second distance from the substrate, and the second distance is different from the first distance. The overlay mark further includes a third feature extending in the X-direction and the Y-direction, wherein the third feature is a third distance from the substrate, and the third distance is different from the first distance and the second distance.

Abstract: First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.