Abstract: An electromagnetic flowmeter with voltage-amplitude conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a voltage-amplitude conductivity-sensing device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrode. The switch is selectively connected to the flow-sensing device or the voltage-amplitude conductivity-sensing device according to the signals sent from the microprocessor. The microprocessor makes the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The microprocessor makes the exciting-current generating device to stop generating exciting current and computing conductivity of liquid when the switch is electrically connected to the voltage-amplitude conductivity-sensing device.

Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited to cover the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removed by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate is selectively removed.

Abstract: An electromagnetic flowmeter with variable-frequency conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a variable-frequency conductivity measuring device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrodes. The switch is selectively connected to the flow-sensing device or the variable-frequency conductivity measuring device according to the signals sent from the first microprocessor. The microprocessor makes the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The first microprocessor makes the exciting-current generating device stop to generate exciting current and computes conductivity of liquid when the switch is electrically connected to the variable-frequency conductivity-sensing device.

Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method include steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited covering the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removing by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate selectively is removed.

Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method include steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited covering the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removing by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate selectively is removed.

Abstract: Provided is a semiconductor device including a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate and an N-type deep well region. The first well region is in the substrate. The second well region is in the substrate proximate to the first well region. The gate is on the substrate and covers a portion of the first well region and a portion of the second well region. The source region is in the first well region at one side of the gate. The drain region is in the second well region at another side of the gate. The dummy gate is on the substrate between the gate and the drain region. The deep well region is in the substrate and surrounds the first and second well regions. An operation method of the semiconductor device is further provided.

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract: An automatic placement system of IC design and a method thereof is provided. The automatic placement system of IC design concerns the chip area utility ratio, the input-output relationship between components, the power consumption produced from thermal noise of circuits and the MOS-type transformation ratio, and performs the genetic algorithm for providing an optimal solution to the placement problem. Herewith the effect of optimizing the placement according to the data of components and parameter is achieved.

Abstract: The present invention provides a detachable mechanism of bicycle pedal and locking shoe, wherein a magnetic absorber is set on the bicycle pedal in collaboration with an adsorbed unit on the bottom of the locking shoe, enabling easy coupling or disengagement; meanwhile, the bottom of the locking shoe is provided with a -shaped groove mating with the frame of the bicycle pedal, so that the locking shoe can be coupled with the bicycle pedal more stably and robustly; moreover, an oblique surface is formed on the same lateral wall of two channels of the groove, such that the locking shoe can be more easily mated with the bicycle pedal in an oblique angle; furthermore, marks are printed on the inner edge of the locking shoe corresponding to two channels of -shaped groove, enabling rapid coupling by the beginners.

Abstract: The present invention relates to an improved detachable clock and watch gear assembly structure, which divides the gear assembly into detachable and independent first and second devices; the first device comprises: main and pinion gear representing hour, minute and second hands, spiral spring wheel for storing energy and spiral spring for ringing; the second device comprises: time-controlled precision escapement wheel, pallet, balance spring and balance wheel; of which, the first device can clamp securely the main and pinion gears as well as spiral spring by using upper/lower plywood along with the fixed leg, so can the second device clamp securely the escapement wheel, pallet, balance spring and balance wheel in the same way; an fixed arm is extended from the upper/lower plywood at one side of the first device to clamp the second device and fix it by bolt for meshing and interlocking purpose; with this design, the first device can be checked or replaced in common repair or replacement process, helping to avo

Abstract: A method for manufacturing the copper oxide nano-particles is provided. The method includes the steps of providing a copper-contained salt solution, providing a alkaline solution, mixing the copper-contained salt solution and the alkaline solution by using a high-gravity force provided by a high-gravity device to generate a slurry, removing the solvent in the slurry to obtain a precursor of the copper oxide nano-particles, and calcining the precursor to produce the copper oxide nano-particles.

Abstract: A method for manufacturing a metal nanoparticle is provided. The method includes steps of: a) providing a metal salt solution, b) providing a reducing agent, c) providing a protecting agent, d) providing an alkaline solution, e) mixing the salt solution, the reducing agent, the protecting agent and the alkaline solution to form a slurry within a high-gravity field, and f) separating the metal nanoparticle from the slurry.

Abstract: A method for manufacturing a metal nanoparticle is provided. The method includes steps of: a) providing a metal salt solution, b) providing a reducing agent, c) providing a protecting agent, d) providing an alkaline solution, e) mixing the salt solution, the reducing agent, the protecting agent and the alkaline solution to form a slurry within a high-gravity field, and f) separating the metal nanoparticle from the slurry.

Abstract: An adjustable cassette (1) for accommodating substrates includes a frame (10), a pair of supporting plate (20) with a plurality of retaining members (208) facing each other, and an adjusting means for joining of the supporting plates to the frames and thereby forming the cassette. At least one supporting plate can slide away from or close to another supporting plate and be fixed by means of the adjusting means.

Abstract: A storage cassette (1) for accommodating substrates includes a box-shaped case (10) having a space and defining an entrance for inserting the substrates into the space; and a pair of stopping mechanisms (60) each including a top first locating mechanism (30), a bottom second locating mechanism (50) and a stopper (40) engaged therebetween. The stopping mechanisms are respectively located at opposite sides of the entrance. Each locating mechanism defines a first locating portion, a second locating portion closer to a corresponding side of the opposite sides than the first locating portion, and a connecting means portion interconnecting the first and second locating means. In a first position, the stopper is engaged in the first locating portion, and substrates accommodated in the cassette cannot be displaced; in a second position, the stopper is engaged in the second locating portion, and the substrates can be freely slid out from the space.

Abstract: A supporting column (30) of the present invention includes a main body (31) and a stiff shaft (33). The main body (31) includes a half-sleeve shaft (319) and a plurality of parallel wing panels (317) encircling portions of the half-sleeve shaft. The main body has a C-shaped cross section and defines an axial bore along an axis direction. The wing panels are formed perpendicular to the half-sleeve shaft and each wing panel provides a protrusion (318) in the middle of the wing panel. A cassette (40) incorporating the supporting columns is used to accommodate a plurality of substrates.

Abstract: An adjustable cassette (1) for accommodating substrates includes a frame (10), a pair of supporting plate (20) with a plurality of retaining members (208) facing each other, and an adjusting means for joining of the supporting plates to the frames and thereby forming the cassette. At least one supporting plate can slide away from or close to another supporting plate and be fixed by means of the adjusting means.

Abstract: A storage cassette (1) for accommodating substrates includes: a box-shaped case (10) having a space for retaining substrates and defining an entrance for inserting the substrates into the space; and a pair of stopping mechanisms (60) each including a top first locating mechanism (30), a bottom second locating mechanism (50) and a stopper (40) engaged therebetween. The stopping mechanisms are located at opposite sides of the entrance. Each locating mechanism defines a first locating means, a second locating means closer to a corresponding side of the case than the first locating means, and a connecting means interconnecting the first and second locating means. In a first position, the stopper is engaged in the first locating means, and substrates accommodated in the cassette cannot be displaced; in a second position, the stopper is engaged in the second locating means, and the substrates can be freely slid out from the space.

Abstract: This invention relates to a cassette (1) for supporting substrates and includes a pair of frames (2) opposite each other, at least two supporting bodies (3) arranged opposite each other between the frames, and at least a stopper rod (4) arranged between the frames. The frames, the supporting bodies and the stopper rods define a space for accommodating the substrates, and each stopper rod includes a metal rod (40) and a resin layer (42). The resin layer forms a coating on the metal rod, forming a unit.

Abstract: The present invention relates to a supporting plate (10) and a cassette (20) for accommodating substrates using the same. The supporting plate includes a main body (11) and at least two stiff shafts (13). The main body includes a plurality of wing panels (15) extending from the main body and at least two through grooves (18). A space interval (17) is defined between neighboring wing panels, each wing panel comprises a plurality of protrusions (151) extending from the free side of each wing panel, and the wing panels slope down. The two stiff shafts being received in the two through grooves.