Abstract: A device includes a gate isolation plug, which further includes a U-shaped layer having a bottom portion and two sidewall portions, and an inner region overlapping the bottom portion. The inner region contacts the two sidewall portions. A first transistor has a first gate stack, and a first end of the first gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. A second transistor has a second gate stack, and a second end of the second gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. The first gate stack and the second gate stack are on opposite sides of the gate isolation plug.

Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A device includes a gate isolation plug, which further includes a U-shaped layer having a bottom portion and two sidewall portions, and an inner region overlapping the bottom portion. The inner region contacts the two sidewall portions. A first transistor has a first gate stack, and a first end of the first gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. A second transistor has a second gate stack, and a second end of the second gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. The first gate stack and the second gate stack are on opposite sides of the gate isolation plug.

Abstract: The present disclosure describes optical and optoelectronic assemblies that, in some cases, include screen-printed micro-spacers, as well as methods for manufacturing such assemblies and modules. For example, micro-spacers can be applied on a first optical element layer, and a second optical element layer can be provided on the first micro-spacers. By providing the second optical element layer on the first micro-spacers, the second optical element layer and the first optical element layer can be separated from one another by air or vacuum gaps each of which is laterally surrounded by a portion of the first micro-spacers.

Abstract: The present disclosure describes wafer-level processes for fabricating optoelectronic device subassemblies that can be mounted, for example, to a circuit substrate, such as a flexible cable or printed circuit board, and integrated into optoelectronic modules that include one or more optical subassemblies stacked over the optoelectronic device subassembly. The optoelectronic device subassembly can be mounted onto the circuit substrate using solder reflow technology even if the optical subassemblies are composed of materials that are not reflow compatible.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.

Abstract: A device includes a gate isolation plug, which further includes a U-shaped layer having a bottom portion and two sidewall portions, and an inner region overlapping the bottom portion. The inner region contacts the two sidewall portions. A first transistor has a first gate stack, and a first end of the first gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. A second transistor has a second gate stack, and a second end of the second gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. The first gate stack and the second gate stack are on opposite sides of the gate isolation plug.

Abstract: A method and apparatus for generating machining code of workpieces from a paper engineering drawing are provided. The method includes processing the paper engineering drawing to be a binary image; extracting dimension features and shape features of the workpieces from the binary image; and generating the machining codes of the workpieces based on the extracted dimension features and shape features of the workpieces. The machining codes indicate the dimension and shape of the workpieces, Machining codes of workpieces are generated from a paper engineering drawing directly without manual involvement.

Abstract: A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO2. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O?2:1.

Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A method includes forming a first mask over a substrate through a double patterning process, wherein the first mask comprises a horizontal portion and a plurality of vertical portions protruding over the horizontal portion, and wherein the vertical portions are spaced apart from each other, applying a first etching process to the first mask until a top surface of a portion of the substrate is exposed, applying a second etching process to the substrate to form intra-device openings and inter-device openings, wherein the inter-device openings are formed at the exposed portion of the substrate, filling the inter-device openings and the intra-device openings to form inter-device insulation regions and intra-device insulation regions and etching back the inter-device insulation regions and the intra-device insulation regions to form a plurality of fins protruding over top surfaces of the inter-device insulation regions and the intra-device insulation regions.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (0) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.