Patents by Inventor Ming-Jinn Tsai
Ming-Jinn Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10573807Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: GrantFiled: December 11, 2017Date of Patent: February 25, 2020Assignee: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20180375020Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: ApplicationFiled: December 11, 2017Publication date: December 27, 2018Applicant: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9899222Abstract: A trench structure on a SiC substrate and method for fabricating thereof is provided. The fabricating method includes: providing a SiC substrate; forming a protection layer on the SiC substrate; forming an resisting layer on the protection layer; patterning the resisting layer and the protection layer to form an opening; patterning the SiC substrate by using the patterned resisting layer as a hard mask to form a trench; removing the patterned resisting layer; performing a high-temperature annealing process to form a rounded bottom of the trench; and removing the protection layer.Type: GrantFiled: December 21, 2015Date of Patent: February 20, 2018Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuan-Wei Chu, Ming-Jinn Tsai
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Patent number: 9847479Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: GrantFiled: July 20, 2017Date of Patent: December 19, 2017Assignee: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20170317276Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: ApplicationFiled: July 20, 2017Publication date: November 2, 2017Applicant: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9735352Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: December 28, 2015Date of Patent: August 15, 2017Assignee: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20170140936Abstract: A trench structure on a SiC substrate and method for fabricating thereof is provided. The fabricating method includes: providing a SiC substrate; forming a protection layer on the SiC substrate; forming an resisting layer on the protection layer; patterning the resisting layer and the protection layer to form an opening; patterning the SiC substrate by using the patterned resisting layer as a hard mask to form a trench; removing the patterned resisting layer; performing a high-temperature annealing process to form a rounded bottom of the trench; and removing the protection layer.Type: ApplicationFiled: December 21, 2015Publication date: May 18, 2017Inventors: KUAN-WEI CHU, MING-JINN TSAI
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Publication number: 20160111636Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: ApplicationFiled: December 28, 2015Publication date: April 21, 2016Applicant: HIGGS OPL. CAPITAL LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9245924Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: October 23, 2014Date of Patent: January 26, 2016Assignee: HIGGS OPL. CAPITAL LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20150041752Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: ApplicationFiled: October 23, 2014Publication date: February 12, 2015Inventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 8884260Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: October 24, 2013Date of Patent: November 11, 2014Assignee: Higgs Opl. Capital LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20140048762Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: ApplicationFiled: October 24, 2013Publication date: February 20, 2014Applicant: Higgs Opl. Capital LLCInventors: Frederick T. CHEN, Ming-Jinn TSAI
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Patent number: 8604457Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: November 12, 2008Date of Patent: December 10, 2013Assignee: Higgs Opl. Capital LLCInventors: Frederick T Chen, Ming-Jinn Tsai
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Publication number: 20130009124Abstract: A type of resistance random access memory structure having the function of diode rectification includes a first electrode, a second electrode and a resistance conversion layer. The resistance conversion layer is disposed between the first electrode and the second electrode; and it includes a first oxidized insulating layer which is adjacently connected to the first electrode; a second oxidized insulating layer which is adjacently connected to the second electrode; as well as an energy barrier turning layer disposing between the first oxidized insulating layer and the second oxidized insulating layer. An energy barrier high can be adjusted and controlled to change the resistance by voltage between the energy barrier turning layer and the first oxidized insulating layer. A fixed energy barrier is formed between the second oxidized insulating layer and the energy barrier turning layer, so that the resistance random access memory element features the function of diode rectification.Type: ApplicationFiled: September 20, 2011Publication date: January 10, 2013Inventors: Ting-Chang CHANG, Yong-En SYU, Fu-Yen JIAN, Ming-Jinn TSAI
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Patent number: 8198620Abstract: A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.Type: GrantFiled: December 14, 2009Date of Patent: June 12, 2012Assignee: Industrial Technology Research InstituteInventors: Frederick T. Chen, Ming-Jinn Tsai, Wei-Su Chen, Heng-Yuan Lee
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Patent number: 8072018Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate. A lamination structure is on the substrate along a first direction. The lamination structure comprises a plurality of conductive layers arranged from bottom to top and separated from each other, and each of the conductive layers has a channel region and an adjacent source/drain doped region along the first direction. A first gate structure is on a sidewall of the channel region of each conductive layer. The first gate structure comprises an inner first gate insulating layer and an outer first gate conductive layer.Type: GrantFiled: December 28, 2007Date of Patent: December 6, 2011Assignee: Industrial Technology Research InstituteInventors: Wei-Su Chen, Ming-Jinn Tsai
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Patent number: 7989795Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.Type: GrantFiled: September 18, 2007Date of Patent: August 2, 2011Assignees: ProMOS Technologies Inc., Nanya Technology Corporation, Winbond Electronics Corp.Inventors: Wei-Su Chen, Yi-Chan Chen, Hong-Hui Hsu, Chien-Min Lee, Der-Sheng Chao, Chih Wei Chen, Ming-Jinn Tsai
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Publication number: 20110155992Abstract: A eutectic memory includes a eutectic memory material layer, a top and a bottom electrodes, or a left and a right electrodes. Materials of the eutectic memory layer are represented by M1-M2-X wherein the M1 is a semiconductor element, the M2 is a metallic element which forms eutectic with the M1, and the X is an unavoidable impurity or an added element.Type: ApplicationFiled: May 5, 2010Publication date: June 30, 2011Applicants: Industrial Technology Research Institute, National Tsing Hua University, Feng Chia UniversityInventors: Chin Fu Kao, Tsung Shune Chin, Frederick Ta Chen, Ming Jinn Tsai
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Patent number: 7964862Abstract: Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto.Type: GrantFiled: March 26, 2008Date of Patent: June 21, 2011Assignee: Industrial Technology Research InstituteInventors: Frederick T Chen, Yen Chuo, Hong-Hui Hsu, Jyi-Tyan Yeh, Ming-Jinn Tsai
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Publication number: 20110140067Abstract: A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.Type: ApplicationFiled: December 14, 2009Publication date: June 16, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Frederick T. Chen, Ming-Jinn Tsai, Wei-Su Chen, Heng-Yuan Lee