Patents by Inventor Ming-Kai Liu

Ming-Kai Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11929319
    Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 11894330
    Abstract: A method of manufacturing a semiconductor device includes providing a carrier, disposing a first pad on the carrier, forming a post on the first pad, and disposing a joint adjacent to the post and the first pad to form a first entire contact interface between the first pad and the joint and a second entire contact interface between the first pad and the post. The first entire contact interface and the second entire contact interface are flat surfaces.
    Type: Grant
    Filed: March 22, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Lin Lu, Kai-Chiang Wu, Ming-Kai Liu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang, Chia-Chun Miao, Hao-Yi Tsai
  • Publication number: 20230378058
    Abstract: Semiconductor packages and methods of forming the same are disclosed. An semiconductor package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Application
    Filed: August 1, 2023
    Publication date: November 23, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 11551999
    Abstract: A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: January 10, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lipu Kris Chuang, Chung-Shi Liu, Han-Ping Pu, Hsin-Yu Pan, Ming-Kai Liu, Ting-Chu Ko
  • Publication number: 20220359347
    Abstract: A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lipu Kris Chuang, Chung-Shi Liu, Han-Ping Pu, Hsin-Yu Pan, Ming-Kai Liu, Ting-Chu Ko
  • Publication number: 20220246578
    Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.
    Type: Application
    Filed: April 19, 2022
    Publication date: August 4, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 11335666
    Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: May 17, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Publication number: 20220013494
    Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.
    Type: Application
    Filed: July 9, 2020
    Publication date: January 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 11211339
    Abstract: A semiconductor device includes a semiconductor die having an insulative layer and a conductive feature in the insulative layer, and a shield in contact with a lateral surface of the conductive feature. In some embodiments, the lateral surface of the conductive feature is aligned with an edge of the insulating material.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chuei-Tang Wang, Vincent Chen, Tzu-Chun Tang, Chen-Hua Yu, Ching-Feng Yang, Ming-Kai Liu, Yen-Ping Wang, Kai-Chiang Wu, Shou Zen Chang, Wei-Ting Lin, Chun-Lin Lu
  • Publication number: 20210351126
    Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Application
    Filed: July 22, 2021
    Publication date: November 11, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 11127708
    Abstract: Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: September 21, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Kai Liu, Han-Ping Pu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 11101238
    Abstract: A surface mounting semiconductor component includes a semiconductor device, a circuit board, a number of first solder bumps, and a number of second solder bumps. The semiconductor device included a number of die pads. The circuit board includes a number of contact pads. The first solder bumps are configured to bond the semiconductor device and the circuit board. Each of the first solder bumps connects at least two die pads with a corresponding contact pad. Each of the second solder bumps connects a die pad with a corresponding contact pad.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: August 24, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ming-Kai Liu, Chun-Lin Lu, Kai-Chiang Wu, Shih-Wei Liang, Ching-Feng Yang, Yen-Ping Wang, Chia-Chun Miao
  • Patent number: 11075159
    Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: July 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Publication number: 20210210450
    Abstract: A method of manufacturing a semiconductor device includes providing a carrier, disposing a first pad on the carrier, forming a post on the first pad, and disposing a joint adjacent to the post and the first pad to form a first entire contact interface between the first pad and the joint and a second entire contact interface between the first pad and the post. The first entire contact interface and the second entire contact interface are flat surfaces.
    Type: Application
    Filed: March 22, 2021
    Publication date: July 8, 2021
    Inventors: CHUN-LIN LU, KAI-CHIANG WU, MING-KAI LIU, YEN-PING WANG, SHIH-WEI LIANG, CHING-FENG YANG, CHIA-CHUN MIAO, HAO-YI TSAI
  • Publication number: 20210202354
    Abstract: A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.
    Type: Application
    Filed: June 10, 2020
    Publication date: July 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lipu Kris Chuang, Chung-Shi Liu, Han-Ping Pu, Hsin-Yu Pan, Ming-Kai Liu, Ting-Chu Ko
  • Patent number: 10971463
    Abstract: A semiconductor device includes a first carrier including a first pad, a second carrier including a second pad disposed opposite to the first pad, a joint coupled with and standing on the first pad, a joint encapsulating the post and bonding the first pad with the second pad, a first entire contact interface between the first pad and the joint, a second entire contact interface between the first pad and the post, and a third entire contact interface between the joint and the second pad. The first entire contact interface, the second entire contact interface and the third entire contact interface are flat surfaces. A distance between the first entire contact interface and the third entire contact interface is equal to a distance between the second entire contact interface and the third entire contact interface. The second entire contact interface is a continuous surface.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: April 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Lin Lu, Kai-Chiang Wu, Ming-Kai Liu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang, Chia-Chun Miao, Hao-Yi Tsai
  • Patent number: 10964595
    Abstract: A method of packaging an integrated circuit includes forming a first integrated circuit and a second integrated circuit on a wafer, the first and second integrated circuit separated by a singulation region. The method includes covering the first and second integrated circuits with a molding compound, and sawing through the molding compound and a top portion of the wafer using a beveled saw blade, while leaving a bottom portion of the wafer remaining. The method further includes sawing through the bottom portion of the wafer using a second saw blade, the second saw blade having a thickness that is less than a thickness of the beveled saw blade. The resulting structure is within the scope of the present disclosure.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: March 30, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Ping Wang, Ming-Kai Liu, Kai-Chiang Wu
  • Patent number: 10879170
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, a molding compound, a polymer layer, a conductive trace, a conductive via and an inductor. The semiconductor die is laterally surrounded by the molding compound. The polymer layer covers the semiconductor die and the molding compound. The conductive trace, the conductive via and the inductor are embedded in the polymer layer. The conductive via extends from a top surface of the conductive trace to a top surface of the polymer layer. The inductor has a body portion extending horizontally and a protruding portion protruded from the body portion. A total height of the body and protruding portions is substantially equal to a sum of a thickness of the conductive trace and a height of the conductive via. The height of the body portion is greater than the thickness of the conductive trace.
    Type: Grant
    Filed: April 21, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Ping Chiang, Chung-Shi Liu, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Chang-Wen Huang, Yu-Sheng Hsieh, Ching-Yu Huang
  • Patent number: 10867957
    Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Lin Lu, Kai-Chiang Wu, Ming-Kai Liu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang, Chia-Chun Miao, Hung-Jen Lin
  • Patent number: RE49046
    Abstract: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device is formed by connecting a top package and a bottom package together using a plurality of PoP connectors on the bottom package connected to corresponding connectors of the top package. The PoP device further comprises a plurality of dummy connectors contained in the bottom package and not connected to any corresponding connector in the top package.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Kai Liu, Kai-Chiang Wu, Hsien-Wei Chen, Shih-Wei Liang