Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: Apparatus and methods for three-dimensional pose estimation are disclosed herein. An example apparatus includes an image synchronizer to synchronize a first image generated by a first image capture device and a second image generated by a second image capture device, the first image and the second image including a subject; a two-dimensional pose detector to predict first positions of keypoints of the subject based on the first image and by executing a first neural network model to generate first two-dimensional data and predict second positions of the keypoints based on the second image and by executing the first neural network model to generate second two-dimensional data; and a three-dimensional pose calculator to generate a three-dimensional graphical model representing a pose of the subject in the first image and the second image based on the first two-dimensional data, the second two-dimensional data, and by executing a second neural network model.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate and a word line (WL) structure, wherein the substrate includes trenches arranged in parallel intervals; the WL structure is located in the trenches, and includes a dielectric layer and a conductive layer; the dielectric layer covers a bottom surface and a sidewall of the conductive layer; the conductive layer includes a first conductive layer and a second conductive layer; and a first component is doped in the second conductive layer.

Abstract: Provided are a display module and a manufacturing method therefor, an LED display panel and an LED display apparatus. The display module includes a board, a pixel unit array, an encapsulation layer and a black ink layer. The board has a front surface and a back surface. The pixel unit array is disposed on the front surface of the board. The encapsulation layer covers the region where the pixel unit array is located. A side surface of the encapsulation layer forms a slope surface at an edge of the front surface of the board. The black ink layer covers the encapsulation layer.

Abstract: In a communication method, a first access point (AP) in a first AP multi-link device generates a management frame that includes a capability information field. The capability information field includes first indication information indicating whether a second AP, which is also in the first AP multi-link device, has performed a channel switch. The first AP then sends the management frame to a first station (STA).

Abstract: A method and system of image processing for action classification uses fine-grained motion-attributes.

Abstract: The present disclosure relates to crystalline forms of benzamide compound and processes for preparing the same. Provided are crystalline Form J and an amorphous form of a compound of formula (I), a process for preparing the same, and use thereof. The crystalline Form J has the advantages in at least one of solubility, melting point, stability, dissolution, hygroscopicity, adhesion, fluidity, biological effectiveness, processing performance, purification, formulation production, safety, and the like, which provides a new and better choice for the preparation of pharmaceutical formulations containing the compound of formula (I), and has a very important significance for the drug development.

Abstract: A method includes laying out a standard cell region, with a rectangular space being within the standard cell region. The standard cell region includes a first row of standard cells having a first bottom boundary facing the rectangular space, and a plurality of standard cells having side boundaries facing the rectangular space. The plurality of standard cells include a bottom row of standard cells. A memory array is laid out in the rectangular space, and a second bottom boundary of the bottom row and a third bottom boundary of the memory array are aligned to a same straight line. A filler cell region is laid out in the rectangular space. The filler cell region includes a first top boundary contacting the first bottom boundary of the first row of standard cells, and a fourth bottom boundary contacting a second top boundary of the memory array.

Abstract: A memory device comprising a memory array and control logic operatively coupled with the memory array. The control logic is to: detect a program operation directed at a selected wordline of multiple wordlines of the memory array; determine, during an initial phase of the program operation, whether a program voltage being applied to the selected wordline satisfies a threshold program voltage; add, in response to the program voltage not satisfying the threshold program voltage, a base offset voltage to an initial pass voltage to generate a higher pass voltage, the initial pass voltage being a percentage of an initial program voltage; and cause the higher pass voltage to be applied to a remainder of the multiple wordlines other than the selected wordline.

Abstract: Provided are a symmetric memory cell and a BNN circuit. The symmetric memory cell includes a first complementary structure and a second complementary structure, the second complementary structure being symmetrically connected to the first complementary structure in a first direction, wherein the first complementary structure includes a first control transistor configured to be connected to the second complementary structure, the second complementary structure includes a second control transistor, a drain electrode of the second control transistor and a drain electrode of the first control transistor being symmetrically arranged in the first direction and connected to a bit line, and the symmetric memory cell is configured to store a weight value 1 or 0.

Abstract: Embodiments of this application disclose a method for selecting a packet sending path, including: An initiator device generates a first packet; and the initiator device sends the first packet to a reflector device through a first path, where the first packet includes first indication information, and the first indication information indicates the reflector device to select a path to send a second packet to the initiator device.

Abstract: A method includes forming a conductive member over a first conductive line; forming a second conductive line over the conductive member; and removing a portion of the conductive member exposed by the second conductive line to form a conductive via. The formation of the second conductive line is implemented prior to the formation of the conductive via. A semiconductor structure includes a first conductive line having a first surface; a second conductive line disposed above the first conductive line and having a second surface overlapping the first surface; and a conductive via electrically connected to the first surface and the second surface. The conductive via includes a first end disposed within the first surface, a second end disposed within the second surface, and a cross-section between the first end and the second end, wherein at least two of interior angles of the cross-section are substantially unequal to 90°.

Abstract: An approach is disclosed for real-time object tracking. The approach involves, for example, using a first object tracking mechanism to detect and associate one or more objects from frame to frame of a video. The approach also involves initiating one or more second object tracking mechanisms to track the one or more objects detected by the first object tracking mechanism from frame to frame of the video in parallel with the first object tracking mechanism. The approach further involves using a tracking output of the one or more second object tracking mechanisms in place of the first object tracking mechanism for a frame of the video based on determining that first object tracking mechanism has missed a detection of the object in the frame of the video.

Abstract: A fingerprint identification module includes a light guiding member, a flexible circuit board, two light emitting members, and a fingerprint identification chip. The light guiding member includes a bottom and a protruding edge. The protruding edge surrounds to form a first space. A first through-hole is formed on the bottom. The flexible circuit board is disposed in the first space and has a first portion, a second portion, a third portion, and a fourth portion connected in sequence. The first portion goes out of the light guiding member through the first through-hole. The third portion faces a direction opposite to the bottom. The second portion and the fourth portion face the bottom of the light guiding member. The light emitting members are disposed on the flexible circuit board and face the light guiding member. The fingerprint identification chip is disposed on the third portion of the flexible circuit board.

Abstract: Disclosed herein are methods and compositions for detecting Bordetella pertussis and Bordetella parapertussis by detecting the presence of the IS481 and IS1001 genomic insertion sequences, respectively.

Abstract: A fast self-tuning method of gain applied to a servo actuator connected with a motor is disclosed and includes following steps: retrieving a current-feedback information of the motor to compute a torque estimated value; retrieving a position-feedback information of the motor to compute an acceleration estimated value; computing a system inertia based on the torque estimated value and the acceleration estimated value, wherein the system inertia indicates an inertia of the motor carrying a specific load; computing an estimated control gain for the servo actuator based on the system inertia; and, performing a self-tuning procedure by the servo actuator in accordance with the estimated control gain.

Abstract: A LED display module includes multiple pixel rows. A first pixel row includes a plurality of first pixel units. Each of the plurality of first pixel units includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. Sub-pixels of the plurality of first pixel units form at least one first sub-pixel row. A first row of the at least one first sub-pixel row includes at least two types of the first sub-pixel, the second sub-pixel, and the third sub-pixel. A last pixel row includes multiple second pixel units. Each of the plurality of second pixel units includes a first sub-pixel, a second sub-pixel,and a third sub-pixel. Sub-pixels of the plurality of second pixel units form at least one second sub-pixel row.

Abstract: A water filter cartridge having an ultraviolet sterilizing function and a water purifier are provided. The water filter cartridge includes a housing, a filtering component, a plurality of flow channels, and an ultraviolet module. The housing has an upper chamber and a lower chamber in fluid communication with the upper chamber. The filtering component is disposed in the upper chamber. The flow channels are arranged in the lower chamber and stacked in a multi-layered arrangement. The ultraviolet module includes an ultraviolet light emitting element disposed in the lower chamber.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.