Abstract: A nanolaminate thin film and a method for forming the same using atomic layer deposition are disclosed. The method includes forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing a first precursor and a first reactant into an enclosure containing the substrate. A layer of silicon dioxide is formed on at least a portion of the aluminum oxide layer by sequentially pulsing a second precursor and a second reactant into the enclosure to form a nanolaminate thin film.

Abstract: A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser plate adjacent to the expansion volume and a reaction chamber. The diffuser plate includes a protrusion located opposite the gas inlet and the protrusion reduces turbulence in the expansion volume.

Abstract: An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. The primary advantage of the ALD process is the near 100% step coverage with properties that are uniform along sidewalls. The process provides smooth (Ra˜2 ?), pure (impurities<1 at. %), AlOx films with improved breakdown strength (9–10 MV/cm) with a commercially feasible throughput.

Abstract: A thermally stable spin valve sensor having an increased GMR ratio by virtue of an AP pinned layer structure in which the first and second pinned layers are separated by an AP coupling layer having a nano-oxide layer formed as an oxidized surface portion of the AP coupling layer. The nano-oxide layer provides an increase in the specular scattering, and in turn, an increase in the GMR ratio.

Abstract: An apparatus for fabricating a conformal thin film on a substrate are disclosed. The apparatus includes a top shield having a top surface and a bottom surface and a bottom shield having an aperture formed therein and a thickness. The bottom shield is coupled to the bottom surface of the top shield such that the top shield covers the aperture. The apparatus further includes a substrate holder that may hold a substrate. The substrate holder is in contact with the bottom shield such that a reaction chamber is formed having a volume defined by the aperture and the thickness of the bottom shield.

Abstract: A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser plate adjacent to the expansion volume and a reaction chamber. The diffuser plate includes a protrusion located opposite the gas inlet and the protrusion reduces turbulence in the expansion volume.

Abstract: An amorphous soft magnetic thin film material for forming shielding and keeper applications in MRAM devices. The amorphous soft magnetic material may be deposited using Physical Vapor Deposition (PVD) in the presence of a magnetic field, in order to form shielding layers and keepers in a multi-layer metallization process. The soft magnetic material may be an amorphous metallic alloy, such as CoZrX, where X may be Ta, Nb, Pd and/or Rh.

Abstract: A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by cluster ion beam (CIB) oxidation. Specifically, the method comprises depositing a first magnetic layer on a substrate, then depositing a nonmagnetic metal layer on the first magnetic layer. At least a top surface of the nonmagnetic layer is oxidized by CIB oxidation. In one embodiment, only a top surface portion is oxidized such that a nano-oxide layer (NOL) is formed on a nonmagnetic conductive layer. In another embodiment, the nonmagnetic metal layer is oxidized throughout it's thickness such that the layer is converted to a nonmagnetic insulating film. After oxidation, a second magnetic layer is deposited on the oxidized layer.

Abstract: A thermally stable spin valve sensor having an increased GMR ratio by virtue of an AP pinned layer structure in which the first and second pinned layers are separated by an AP coupling layer having a nano-oxide layer formed as an oxidized surface portion of the AP coupling layer. The nano-oxide layer provides an increase in the specular scattering, and in turn, an increase in the GMR ratio.

Abstract: A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by cluster ion beam (CIB) oxidation. Specifically, the method comprises depositing a first magnetic layer on a substrate, then depositing a nonmagnetic metal layer on the first magnetic layer. At least a top surface of the nonmagnetic layer is oxidized by CIB oxidation. In one embodiment, only a top surface portion is oxidized such that a nano-oxide layer (NOL) is formed on a nonmagnetic conductive layer. In another embodiment, the nonmagnetic metal layer is oxidized throughout it's thickness such that the layer is converted to a nonmagnetic insulating film. After oxidation, a second magnetic layer is deposited on the oxidized layer.

Abstract: A GMR spin valve is provided for reading a magnetic signal from a magnetic recording medium. The spin valve includes a non-magnetic layer such as for example copper, separated by first and second magnetic layers. The spin valve includes a pinned magnetic layer and a free magnetic layer, the resistance of the spin valve changing with the relative angle between the direction of magnetization of free and pinned layers. Extremely smooth surfaces are provided at the interfaces between the non-magnetic layer and the adjacent magnetic layers. This smooth interface greatly enhances the performance and reliability of the spin valve by allowing extremely tight control of the thickness of the non-magnetic layer and by preventing atomic diffusion between the non-magnetic and magnetic layers. This smooth interface is achieved by including a surfactant in the deposition of the non-magnetic layer.

Abstract: A polarization independent optical device is provided wherein the device has two optical paths that include one or more birefringent crystals, a electrically controllable rotator, and a fixed waveplate. The device may operate as a switch, attenuator, coupler, or polarization mode dispersion compensator. The device may also include several folded path embodiments, a multifunctional embodiment, and a temperature insensitive embodiment.

Abstract: A method for multi-threshold voltage CMOS process optimization. The method includes the steps of: providing a semiconductor substrate with a plurality of devices of different threshold voltages; establishing a plurality of types of timing models for a timing calculation; obtaining a static timing analysis report through the timing calculation; defining a large and a small setup time margin as a Tl and a Ts; changing the devices whose setup time margins are less than Ts to low threshold devices; changing the devices whose setup time margins are greater than Tl to high threshold devices; checking a setup time of each device; changing the devices whose setup time margin does not meet the enhanced static timing analysis report; performing a first pocket implant process for the normal threshold devices; performing a second pocket implant process for the low threshold devices and performing a third pocket implant process for the high threshold devices.

Abstract: A method for multi-threshold voltage CMOS process optimization. The method includes the steps of: providing a semiconductor substrate with a plurality of devices of different threshold voltages; establishing a plurality of types of timing models for a timing calculation; obtaining a static timing analysis report through the timing calculation; defining a large and a small setup time margin as a Tl and a Ts; changing the devices whose setup time margins are less than Ts to low threshold devices; changing the devices whose setup time margins are greater than Tl to high threshold devices; checking a setup time of each device; changing the devices whose setup time margin does not meet the enhanced static timing analysis report; performing a first pocket implant process for the normal threshold devices; performing a second pocket implant process for the low threshold devices and performing a third pocket implant process for the high threshold devices.

Abstract: An amorphous soft magnetic thin film material for forming shielding and keeper applications in MRAM devices. The amorphous soft magnetic material may be deposited using Physical Vapor Deposition (PVD) in the presence of a magnetic field, in order to form shielding layers and keepers in a multi-layer metallization process. The soft magnetic material may be an amorphous metallic alloy, such as CoZrX, where X may be Ta, Nb, Pd and/or Rh.

Abstract: A thin film read/write head with a high performance read section that includes a spin-dependent tunneling sensor composed of a new low resistance metal oxide tunneling barrier material, such as chromium oxide (CrxOy) or niobium oxide (NbOz). The chromium oxide material (CrxOy) can be, for example: Cr3O4, Cr2O3, CrO2, CrO3, Cr5O12, Cr6O15, other stoichiometry, or any combination thereof. The niobium oxide (NbOz) can be, for example: NbO, NbO2, Nb2O5, Nb2O3, Nb12O29, Nb11O27, other stoichiometry, or any combination thereof. The chromium oxide and the niobium oxide material provides a very low sensor resistance with an acceptable magnetoresistance ratio, which will enable the fabrication of high density read sensors, and thus read heads with high data transfer rate.

Abstract: Methods and apparatus for transferring packets in a packet switched communication system. A system is provided that includes an L2 device including a controller determining for each packet received whether the received packet is to be inspected, an inspection device operable to inspect and filter packets identified by the controller including using a zone specific policy and an L2 controller for transferring inspected packets in accordance with L2 header information using L2 protocols.

Abstract: An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. The primary advantage of the ALD process is the near 100% step coverage with properties that are uniform along sidewalls. The process provides smooth (Ra˜2 Å), pure (impurities <1 at. %), AlOx films with improved breakdown strength (9-10 MV/cm) with a commercially feasible throughput.

Abstract: A GMR spin valve is provided for reading a magnetic signal from a magnetic recording medium. The spin valve includes a non-magnetic layer such as for example copper, separated by first and second magnetic layers. The spin valve includes a pinned magnetic layer and a free magnetic layer, the resistance of the spin valve changing with the relative angle between the direction of magnetization of free and pinned layers. Extremely smooth surfaces are provided at the interfaces between the non-magnetic layer and the adjacent magnetic layers. This smooth interface greatly enhances the performance and reliability of the spin valve by allowing extremely tight control of the thickness of the non-magnetic layer and by preventing atomic diffusion between the non-magnetic and magnetic layers. This smooth interface is achieved by including a surfactant in the deposition of the non-magnetic layer.

Abstract: Various embodiments of an apparatus and methods capable of cleaning the end surface of an optical fiber connector, particularly a jet of cleaning liquids with vacuum removal system, clean fluid pressure and/or vacuum, plasma discharge, steam jet, and ultrasound field.