Patents by Inventor Ming-Tao Yu

Ming-Tao Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11943939
    Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Kai Hsu, Jerry Chang Jui Kao, Chin-Shen Lin, Ming-Tao Yu, Tzu-Ying Lin, Chung-Hsing Wang
  • Publication number: 20240020456
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Application
    Filed: July 31, 2023
    Publication date: January 18, 2024
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20230403868
    Abstract: A method includes forming a circuit region over a substrate. The circuit region includes at least one active region extending along a first direction, and at least one gate region extending across the at least one active region and along a second direction transverse to the first direction. At least one first input/output (TO) pattern and at least one second TO pattern are correspondingly formed in different first and second metal layers to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first TO pattern extends along a third direction oblique to both the first direction and the second direction. The at least one second TO pattern extends along a fourth direction oblique to both the first direction and the second direction, the fourth direction transverse to the third direction.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 14, 2023
    Inventors: Jerry Chang Jui KAO, Meng-Kai HSU, Chin-Shen LIN, Ming-Tao YU, Tzu-Ying LIN, Chung-Hsing WANG
  • Patent number: 11755815
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect(LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Grant
    Filed: October 27, 2022
    Date of Patent: September 12, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20230230971
    Abstract: A method of forming an integrated circuit includes placing a first and a second standard cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on at least the first or second standard cell layout design. The first standard cell layout design has a first height. The second standard cell layout design has a second height. Placing the first standard cell layout design includes placing a first set of pin layout patterns on a first layout level over a first set of gridlines, extending in a first direction, and having a first width in a second direction. Placing the second standard cell layout design includes placing a second set of pin layout patterns on the first layout level over a second set of gridlines, extending in the first direction, and having a second width in the second direction.
    Type: Application
    Filed: March 27, 2023
    Publication date: July 20, 2023
    Inventors: Chun-Yao KU, Wen-Hao CHEN, Kuan-Ting CHEN, Ming-Tao YU, Jyun-Hao CHANG
  • Patent number: 11616055
    Abstract: A method of forming an integrated circuit includes generating a first and second standard cell layout design, and manufacturing the integrated circuit based on at least the first or second standard cell layout design. The first standard cell layout design has a first height. The second standard cell layout design has a second height different from the first height. The second standard cell layout design is adjacent to the first standard cell layout design. Generating the first standard cell layout design includes generating a first set of pin layout patterns extending in a first direction, being on a first layout level, and having a first width. Generating the second standard cell layout design includes generating a second set of pin layout patterns extending in the first direction, being on the first layout level, and having a second width different from the first width.
    Type: Grant
    Filed: November 11, 2020
    Date of Patent: March 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Yao Ku, Wen-Hao Chen, Kuan-Ting Chen, Ming-Tao Yu, Jyun-Hao Chang
  • Publication number: 20230058814
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect(LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Application
    Filed: October 27, 2022
    Publication date: February 23, 2023
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Patent number: 11514224
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Grant
    Filed: February 19, 2021
    Date of Patent: November 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20220216270
    Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.
    Type: Application
    Filed: January 4, 2021
    Publication date: July 7, 2022
    Inventors: Meng-Kai HSU, Jerry Chang Jui KAO, Chin-Shen LIN, Ming-Tao YU, Tzu-Ying LIN, Chung-Hsing WANG
  • Patent number: 11256844
    Abstract: A method of generating a layout design of an integrated circuit. The method includes forming a first region having at least two first-type cell rows extending in a first direction. Each one of the first-type cell rows has a first row height measured along a second direction perpendicular to the first direction. The method also includes forming a second region having at least two second-type cell rows extending in the first direction. Each one of the second-type cell rows has a second row height measured along the second direction. The first region is adjacent to the second region, and the first row height of the first-type cell rows is different from the second row height of the second-type cell rows.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Yao Ku, Wen-Hao Chen, Ming-Tao Yu
  • Publication number: 20210248300
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Application
    Filed: February 19, 2021
    Publication date: August 12, 2021
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20210240901
    Abstract: A method of generating a layout design of an integrated circuit. The method includes forming a first region having at least two first-type cell rows extending in a first direction. Each one of the first-type cell rows has a first row height measured along a second direction perpendicular to the first direction. The method also includes forming a second region having at least two second-type cell rows extending in the first direction. Each one of the second-type cell rows has a second row height measured along the second direction. The first region is adjacent to the second region, and the first row height of the first-type cell rows is different from the second row height of the second-type cell rows.
    Type: Application
    Filed: September 18, 2020
    Publication date: August 5, 2021
    Inventors: Chun-Yao KU, Wen-Hao CHEN, Ming-Tao YU
  • Publication number: 20210240902
    Abstract: A method of forming an integrated circuit includes generating a first and second standard cell layout design, and manufacturing the integrated circuit based on at least the first or second standard cell layout design. The first standard cell layout design has a first height. The second standard cell layout design has a second height different from the first height. The second standard cell layout design is adjacent to the first standard cell layout design. Generating the first standard cell layout design includes generating a first set of pin layout patterns extending in a first direction, being on a first layout level, and having a first width. Generating the second standard cell layout design includes generating a second set of pin layout patterns extending in the first direction, being on the first layout level, and having a second width different from the first width.
    Type: Application
    Filed: November 11, 2020
    Publication date: August 5, 2021
    Inventors: Chun-Yao KU, Wen-Hao CHEN, Kuan-Ting CHEN, Ming-Tao YU, Jyun-Hao CHUNG
  • Patent number: 11030383
    Abstract: A method of forming an integrated device includes: providing a first via pillar file specifying a first via pillar; providing a second via pillar file specifying a second via pillar; arranging, by a processor, the first via pillar to electrically connect to a circuit cell in a first circuit; arranging an interconnecting path for electrical connection of the first via pillar to another circuit cell in the first circuit; arranging, by the processor, the second via pillar to replace the first via pillar when the first via pillar induces an electromigration (EM) phenomenon; re-routing the interconnecting path with replacement of the first via pillar to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Yao Ku, Wen-Hao Chen, Ming-Tao Yu, Shao-Huan Wang, Jyun-Hao Chang
  • Patent number: 10956650
    Abstract: Systems and methods for improving design performance of a layout design through placement of functional and spare cells by leveraging layout dependent effect (LDE) is disclosed. The method includes the steps of: importing a plurality of technology files associated with the layout design into an EDA system; importing a netlist associated with the layout design into the EDA system; importing a standard cell library containing pattern-S timing information of the functional cells and the spare cells; performing floorplan and spare cell insertion, wherein the spare cells are distributed uniformly across the floorplan; and conducting placement and optimization through re-placement of the at least one functional cells and the spare cells to form pattern-S with at least one timing critical cells to improve an overall timing performance of the layout design.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Yao Ku, Jyun-Hao Chang, Ming-Tao Yu, Wen-Hao Chen
  • Publication number: 20200285798
    Abstract: A method of forming an integrated device includes: providing a first via pillar file specifying a first via pillar; providing a second via pillar file specifying a second via pillar; arranging, by a processor, the first via pillar to electrically connect to a circuit cell in a first circuit; arranging an interconnecting path for electrical connection of the first via pillar to another circuit cell; arranging, by the processor, the second via pillar to replace the first via pillar when the first via pillar induces an electromigration (EM) phenomenon; re-routing the interconnecting path with replacement of the first via pillar to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
    Type: Application
    Filed: May 26, 2020
    Publication date: September 10, 2020
    Inventors: CHUN-YAO KU, WEN-HAO CHEN, MING-TAO YU, SHAO-HUAN WANG, JYUN-HAO CHANG
  • Patent number: 10678991
    Abstract: A method of forming an integrated device includes: pre-storing a plurality of via pillars in a storage tool; arranging a first via pillar selected from the plurality of via pillars to electrically connect to a circuit cell in a first circuit; analyzing electromigration (EM) information of the first circuit to determine if the first via pillar induces an EM phenomenon; arranging a second via pillar selected from the plurality of via pillars to replace the first via pillar of the circuit cell to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: June 9, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Yao Ku, Wen-Hao Chen, Ming-Tao Yu, Shao-Huan Wang, Jyun-Hao Chang
  • Publication number: 20200004917
    Abstract: A method of forming an integrated device includes: pre-storing a plurality of via pillars in a storage tool; arranging a first via pillar selected from the plurality of via pillars to electrically connect to a circuit cell in a first circuit; analyzing an electromigration information of the first circuit to determine if the first via pillar induces EM phenomenon; arranging a second via pillar selected from the plurality of via pillars to replace the first via pillar of the circuit cell to generate a second circuit when the first via pillar induces EM phenomenon; and generating the integrated device according to the second circuit.
    Type: Application
    Filed: June 27, 2018
    Publication date: January 2, 2020
    Inventors: CHUN-YAO KU, WEN-HAO CHEN, MING-TAO YU, SHAO-HUAN WANG, JYUN-HAO CHANG
  • Publication number: 20190148290
    Abstract: Exemplary embodiments for various via pillar structures include one or more first conductors in a first interconnect layer of a semiconductor stack interconnected with one or more second conductors in a second interconnect layer of the semiconductor stack. The one or more first conductors and/or the one or more second conductors within the first interconnect layer and the second interconnect layer, respectively, can traverse multiple directions. In some situations, this allows multiple interconnections to be utilized to interconnect the one or more first conductors and the one or more second conductors. These multiple interconnections can reduce resistance between the one or more first conductors and the one or more second conductors thereby improving performance of signals flowing between the one or more first conductors and the one or more second conductors.
    Type: Application
    Filed: June 29, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yao KU, Wen-Hao CHEN, Ming-Tao Yu
  • Patent number: 9977857
    Abstract: In examples described herein, methods for via pillar placement and an integrated circuit design including a via pillar are described. In some instances, a path within an integrated circuit or proposed integrated circuit design can be identified as having negative slack. In such instances, in particular where the path includes a fanout to input pins of receivers, a via pillar can be inserted at a location prior to fanout of the path. The via pillar can be inserted, for example, proximate to the fanout, but between the fanout and an output pin of a driver that is connected to the path.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: May 22, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yao Ku, Hung-Chih Ou, Shao-Huan Wang, Wen-Hao Chen, Ming-Tao Yu