Abstract: A semiconductor device for use in a relatively high voltage application that comprises a substrate, a first n-type well region in the substrate to serve as a high voltage n-well (HVNW) for the semiconductor device, a pair of second n-type well regions in the first n-type well region, a p-type region in the first n-type well region between the second n-type well regions, a pair of conductive regions on the substrate between the second n-type well regions, and a number of n-type regions to serve as n-type buried layers (NBLs) for the semiconductor device, wherein the NBLs are located below the first n-type region and dispersed in the substrate.

Abstract: A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process.

Abstract: A method for fabricating a non-volatile memory is provided. A stacked structure including a tunneling layer, a trapping layer, a barrier layer, and a control gate is formed on a substrate. A source region and a drain region are formed beside the stacked structure in the substrate. A silicon oxide spacer is formed on the sidewalls of the stacked structure. An ultraviolet-resistant lining layer is formed on the surfaces of the substrate and the stacked structure to prevent the ultraviolet light from penetrating into the trapping layer. A dielectric layer is formed on the ultraviolet-resistant lining layer. A contact being electrically connected to the control gate is formed in the dielectric layer. A conducting line electrically connected to the contact is formed on the dielectric layer. A lost-surface-charge lining layer is formed on the surfaces of the dielectric layer and the conducting line to reduce the antenna effect.

Abstract: A hermetically sealed electrical switch assembly comprises a casing having an opening end. A cover is sealingly attached to said opening end of said casing for forming a primary volume hermetically sealed from external environment. Received in said primary volume are a switch means and a magnetic responsive means. A magnetic activating means is fitted at the upper surface of said cover for effecting the movement of said magnetic responsive means. The switch means comprises electrical contacts to change the conducting state of a power circuit with which said switch means is connected, a switching lever which can change its positions according to the conducting state of the power circuit. The magnetic responsive means couples with said switching lever for moving with it.

Abstract: A hermetically sealed electrical switch assembly comprises a casing having an opening end. A cover is sealingly attached to said opening end of said casing for forming a primary volume hermetically sealed from external environment. Received in said primary volume are a switch means and a magnetic responsive means. A magnetic activating means is fitted at the upper surface of said cover for effecting the movement of said magnetic responsive means. The switch means comprises electrical contacts to change the conducting state of a power circuit with which said switch means is connected, a switching lever which can change its positions according to the conducting state of the power circuit. The magnetic responsive means couples with said switching lever for moving with it.

Abstract: A tube chemical vapor deposition method of preparing titanium carbide/silicon nitride (TiC/Si.sub.3 N.sub.4) composites. To prepare such composites, titanium carbide (TiC) is first coated with a homogeneous layer of titanium nitride (Ti.sub.3 N.sub.4). A gas mixture of titanium chloride (TiCl.sub.4), nitrogen (N.sub.2), hydrogen (H.sub.2) with an appropriate ratio is introduced into a reaction chamber where the tube chemical vapor deposition takes place. The temperature of the reaction for the sintering process is between 900.degree. C. to 1200.degree. C., under a total pressure of 1 atm. While maintaining a constant temperature for 1 to 2 hours, deposition of titanium nitride (Ti.sub.3 N.sub.4) onto titanium carbide (TiC) powder takes place.

Abstract: A sealed electric switch assembly comprises a magnetic control assembly having first and second magnetic members which is mounted to a top wall of a sealed casing, and an elongated plate having third and fourth magnetic members which is mounted oppositely to the first and second magnetic members so that the elongated plate member can be attracted and repulsed magnetically by the magnetic control assembly. A linkage mechanism is mounted adjacent to the elongated plate member for moving a movable contact of a movable arm to connect and disconnect with a stationary contact. A rotary assembly and a tripping assembly are mounted above the linkage mechanism and over an electromagnet.