Abstract: A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the performance of a plasma treatment to adjust the threshold voltage of the low temperature polysilicon thin film transistor. Because the threshold voltage of the low temperature polysilicon thin film transistor can be adjusted through a plasma treatment, the manufacturing process is more flexible.

Abstract: A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the performance of a plasma treatment to adjust the threshold voltage of the low temperature polysilicon thin film transistor. Because the threshold voltage of the low temperature polysilicon thin film transistor can be adjusted through a plasma treatment, the manufacturing process is more flexible.

Abstract: A system for supplying molding compounds comprising: a barrel, having a plurality of storage holes for storing a plurality of molding compounds; a first push rod below the barrel pushing the plurality of molding compounds within the storage holes; a holder above the barrel holding the molding compounds pushed by the first push rod; a carrier having a plurality of placing holes for the holder putting the plurality of molding compounds, wherein the holder moves to a predetermined position after putting the molding compounds; and a second push rod below the predetermined position pushing the molding compounds located in the placing holes, and then the holder holding the molding compounds and transporting to a mold.

Abstract: A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.

Abstract: A method of forming a polysilicon film having smooth surface using a lateral growth and a step-and-repeat laser process. Amorphous silicon formed in a first irradiation region of a substrate is crystallized to form a first polysilicon region by a first laser shot. Then, the substrate is moved a predetermined distance, and irradiated by a second laser shot. The polysilicon region is then recrystallized and locally planarized by subsequent laser shots. After multiple repetitions of the irradiation procedure, the amorphous silicon film formed on a substrate is completely transformed into a polysilicon film. The polysilicon film includes lateral growth crystal grains and nano-trenches formed in parallel on the surface of the polysilicon film. A longitudinal direction of the nano-trenches is substantially perpendicular to a lateral growth direction of the crystal grains.

Abstract: A method of manufacturing a polysilicon layer is provided. Firstly, a substrate is provided. Next, an amorphous silicon having a first region and a second region is formed on the substrate. After that, the amorphous silicon layer in the first region is completely melted and the amorphous silicon layer in the second region is preheated. The completely melted amorphous silicon layer in the first region is crystallized to form a first polysilicon layer. Next, the preheated amorphous silicon layer in the second region is completely melted. The completely melted amorphous silicon layer in the second region is crystallized to form a second polysilicon layer.

Abstract: A mask for sequential lateral solidification (SLS) process with at least one transparency region is provided. The transparent region is defined by two lengthwise edges, a front edge, and a rear edge. The two lengthwise edges also define a quadrilateral. The front edge is located outside the quadrilateral, and the rear edge is located inside the quadrilateral.

Abstract: A mask for sequential lateral solidification (SLS) processes including at least one first window, one second window, one third window, and one fourth window is provided. Each window has a length extending longitude on the mask. The second window is aligned to the first window. The width of the first window is greater than that of the second window. The fourth window is aligned to the third window. The width of the third window is greater than that of the fourth window.

Abstract: A mask and method of manufacturing a poly-silicon layer using the same are provided. The mask has a first, a second, a third, and a fourth region. The first region has first opaque portions and first slits. The second region has second slits and second opaque portions. The third region includes third opaque portions and third slits. The third opaque portions are perpendicular to or relatively slant to the first opaque portions. The fourth region includes fourth opaque portions and fourth slits. The fourth slits are parallel to the third opaque portions. The first, the second, the third and the fourth opaque portions respectively are parallel to and alternate with the first, the second, the third and the fourth slits, respectively. The method of manufacturing the poly-silicon layer includes forming an amorphous silicon layer on a substrate, then using a mask to form sequential lateral solidification.

Abstract: A method of manufacturing a polysilicon layer is provided. Firstly, a substrate is provided. Next, an amorphous silicon having a first region and a second region is formed on the substrate. After that, the amorphous silicon layer in the first region is completely melted and the amorphous silicon layer in the second region is preheated. The completely melted amorphous silicon layer in the first region is crystallized to form a first polysilicon layer. Next, the preheated amorphous silicon layer in the second region is completely melted. The completely melted amorphous silicon layer in the second region is crystallized to form a second polysilicon layer.

Abstract: A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.

Abstract: A process for cleaning a silicon surface. First, a silicon surface is cleaned with an oxidant solution. Next, the silicon surface is rinsed with HF vapor or liquid and then with the silicon surface with hydrogen water or deionized water under megasonic agitation. Finally, the silicon surface is cleaned with an oxidant solution a second time. The present inventive cleaning process can be applied in thin film transistor (TFT) fabrication and the TFT obtained has higher electron mobility.

Abstract: A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.

Abstract: A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the performance of a plasma treatment to adjust the threshold voltage of the low temperature polysilicon thin film transistor. Because the threshold voltage of the low temperature polysilicon thin film transistor can be adjusted through a plasma treatment, the manufacturing process is more flexible.

Abstract: A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.

Abstract: A process for cleaning a silicon surface. First, a silicon surface is cleaned with an oxidant solution. Next, the silicon surface is rinsed with HF vapor or liquid and then with the silicon surface with hydrogen water or deionized water under megasonic agitation. Finally, the silicon surface is cleaned with an oxidant solution a second time. The present inventive cleaning process can be applied in thin film transistor (TFT) fabrication and the TFT obtained has higher electron mobility.