Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: A probiotic composition for improving an effect of a chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is disclosed in the present disclosure. The probiotic composition comprises an effective amount of Lactobacillus paracasei GMNL-133, an effective amount of Lactobacillus reuteri GMNL-89, and a pharmaceutically acceptable carrier, wherein the Lactobacillus paracasei GMNL-133 was deposited in the China Center for Type Culture Collection on Sep. 26, 2011 under an accession number CCTCC NO. M 2011331, and the Lactobacillus reuteri GMNL-89 was deposited in the China Center for Type Culture Collection on Nov. 19, 2007 under an accession number CCTCC NO. M 207154. A method for improving the effect of the chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is further disclosed in the present disclosure.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: An optical path folding element includes a main body, a light absorption film layer and a matte structure. The main body has optical surface including an incident surface, a reflective surface and an emitting surface. A light enters into the optical folding element through the incident surface. The reflective surface reflects the light so as to change a traveling direction thereof. The light exits the optical folding element through the emitting surface. The light absorbing film layer is configured to reduce reflectance and provided adjacent to at least part of the optical surface, and the light absorbing film layer is in physical contact with the main body. The matte structure is disposed adjacent to at least part of the optical surface. The matte structure provides an undulating profile on a surface of the optical path folding element, and the matte structure is formed in one-piece with the main body.

Abstract: An annular airflow regulating apparatus includes a cup-shaped element and an adjustment element. The cup-shaped element has a bowl and a bottom, integrated to form a first chamber. The bottom has a tapered channel parallel to an axis and penetrating through the bottom. A ring-shaped groove is disposed between the tapered channel and the bottom. The ring-shaped groove has an annular plane perpendicular to the axis. The adjustment element, having a tapered portion and second holes, is movably disposed in the cup-shaped element. The tapered portion protrudes into the tapered channel A tapered annular gap is formed between the tapered portion and the tapered channel. When the adjustment element is moved with respect to the cup-shaped element, a width of the tapered annular gap is varied, and thereupon a flow rate and velocity of the process gas would be varied accordingly.

Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

Abstract: A phototherapy device includes a base, at least one light conversion device and a light source module. The base has an installation slot. The light conversion device is detachably arranged in the installation slot. Each light conversion device includes a plurality of light conversion patterns. The light source module is arranged on a side of the base and configured to provide an excitation beam to the light conversion patterns, so that each of the light conversion patterns emits a converted beam. In this way, the light conversion device of the phototherapy device can be replaced according to the user's needs.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: In some embodiments, a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A display device including a light source module and a wavelength conversion module is provided. The light source module includes a substrate, a plurality of first LED elements and a second LED element. The first LED elements are configured for providing a plurality of first color lights, and the second LED element is configured for providing a second color light. The wavelength conversion module is overlapped and arranged on the light source module, and the wavelength conversion module includes a wavelength conversion element and at least one dichroic filter layer. The wavelength conversion element is configured to absorb the first color lights emitted by a part of the first LED elements and excite a converted light beam, wherein a color of the converted light beam is different from that of the first color lights and the second color light.

Abstract: A light source device and a manufacturing method of the light source device is provided. The light source device includes a micro light-emitting element layer, a transparent substrate and a wavelength conversion module. The wavelength conversion module includes a first wavelength conversion layer, a second wavelength conversion layer, a light transmission layer, multiple barrier structures, multiple reflection layers and a light cut-off layer. The first wavelength conversion layer, the second wavelength conversion layer, and the light transmission layer are arranged in an arrangement direction. Any two of the first wavelength conversion layer, the second wavelength conversion layer, and the light transmission layer are separated from each other by one of the barrier structures. The reflection layers are located between the barrier structures and any one of a sidewall of the first wavelength conversion layer, a sidewall of the second wavelength conversion layer, and a sidewall of the light transmission layer.

Abstract: The present disclosure, in some embodiments, relates to a semiconductor device. The semiconductor device includes an electron supply layer that is disposed over an upper surface of a semiconductor material and that is laterally arranged between a first conductive terminal and a second conductive terminal. A III-N (III-nitride) semiconductor material is disposed over the electron supply layer. A passivation layer is disposed over the III-N semiconductor material, along a side of the III-N semiconductor material, and over the electron supply layer. An insulating material is arranged over the passivation layer and along opposing sidewalls of the second conductive terminal, and a gate structure is disposed over the passivation layer. The passivation layer has an uppermost surface that is directly coupled to a sidewall of the passivation layer. The insulating material extends along the sidewall of the passivation layer.

Abstract: A wavelength conversion module including an isolation structure layer, multiple wavelength conversion patterns, a dichroic filter film, and at least one dichroic filter layer is provided. The isolation structure layer has multiple openings. The wavelength conversion patterns are disposed in a part of the openings, and configured to absorb a first part of multiple excitation light beams be excited to generate multiple converted light beams. The dichroic filter film is disposed on one side of the isolation structure layer. The at least one dichroic filter layer is disposed on another side of the isolation structure layer or disposed in the openings. A part of the converted light beams are reflected to the wavelength conversion patterns by the dichroic filter film. A second part of the excitation light beams passing through the wavelength conversion patterns are reflected to the wavelength conversion patterns by the at least one dichroic filter layer.

Abstract: The present disclosure, in some embodiments, relates to a semiconductor device. The semiconductor device includes an electron supply layer that is disposed over an upper surface of a semiconductor material and that is laterally arranged between a first conductive terminal and a second conductive terminal. A III-N(III-nitride) semiconductor material is disposed over the electron supply layer. A passivation layer is disposed over the III-N semiconductor material, along a side of the III-N semiconductor material, and over the electron supply layer. An insulating material is arranged over the passivation layer and along opposing sidewalls of the second conductive terminal, and a gate structure is disposed over the passivation layer. The passivation layer has an uppermost surface that is directly coupled to a sidewall of the passivation layer. The insulating material extends along the sidewall of the passivation layer.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a transistor device. The method may be performed by forming an anode and a cathode over an electron supply layer disposed on a semiconductor material. A doped III-N semiconductor material is formed over the electron supply layer, and an insulating material is formed over the electron supply layer and the doped III-N semiconductor material. The insulating material continuously extends from over the anode to over the cathode. The insulating material is patterned to form sidewalls of the insulating material that define an opening over the doped III-N semiconductor material. A gate structure is formed directly between the sidewalls of the insulating material and over the doped III-N semiconductor material.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformably over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Abstract: The present disclosure, in some embodiments relates to a semiconductor device. The semiconductor device includes a layer of semiconductor material disposed over a substrate and an electron supply layer disposed over the layer of semiconductor material between an anode terminal and a cathode terminal. A layer of III-N (III-nitride) semiconductor material is disposed over the electron supply layer. A passivation layer contacts an upper surface of the electron supply layer and further contacts an upper surface and a sidewall of the layer of III-N semiconductor material. A gate structure is separated from the layer of III-N semiconductor material by the passivation layer.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformally over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.