Abstract: The present disclosure, in some embodiments, relates to a method of forming a transistor device. The method may be performed by forming an anode and a cathode over an electron supply layer disposed on a semiconductor material. A doped III-N semiconductor material is formed over the electron supply layer, and an insulating material is formed over the electron supply layer and the doped III-N semiconductor material. The insulating material continuously extends from over the anode to over the cathode. The insulating material is patterned to form sidewalls of the insulating material that define an opening over the doped III-N semiconductor material. A gate structure is formed directly between the sidewalls of the insulating material and over the doped III-N semiconductor material.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformably over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformally over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Abstract: The present disclosure, in some embodiments relates to a semiconductor device. The semiconductor device includes a layer of semiconductor material disposed over a substrate and an electron supply layer disposed over the layer of semiconductor material between an anode terminal and a cathode terminal. A layer of III-N (III-nitride) semiconductor material is disposed over the electron supply layer. A passivation layer contacts an upper surface of the electron supply layer and further contacts an upper surface and a sidewall of the layer of III-N semiconductor material. A gate structure is separated from the layer of III-N semiconductor material by the passivation layer.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformally over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformally over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Abstract: The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier (L-FER) device. In some embodiments, the rectifier device has an electron supply layer located over a layer of semiconductor material at a position between an anode terminal and a cathode terminal. A layer of doped III-N semiconductor material is disposed over the electron supply layer. A passivation layer is located over the electron supply layer and the layer of doped III-N semiconductor material. A gate structure is disposed over the layer of doped III-N semiconductor material and the passivation layer. The layer of doped III-N semiconductor material modulates the threshold voltage of the rectifier device, while the passivation layer improves reliability of the L-FER device by mitigating current degradation due to high-temperature reverse bias (HTRB) stress.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformally over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Abstract: A breast massage device includes a main body; a drive unit installed within the main body; and a massage disk mounted on the main body and coupled with the drive unit so as to be driven rotatably thereby. The massage disk has a central axis, a concave surface for covering a breast, and a periphery confining the concave surface, wherein the periphery has a highest point and a lowest point located at two opposite sides of the central axis such that a portion of the concave surface extending from the highest point toward the central axis is longer in curved distance than another portion of the concave surface extending from the lowest point to the central axis. A plurality of massage elements are mounted rotatably on the concave surface such that the massage elements are rotatable relative to the concave surface when the drive unit is activated.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformally over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.

Abstract: The present disclosure relates to a structure and method of forming a low damage passivation layer for III-V HEMT devices. In some embodiments, the structure has a bulk buffer layer disposed over a substrate and a device layer of III-V material disposed over the bulk buffer layer. A source region, a drain region and a gate region are disposed above the device layer. The gate region comprises a gate electrode overlying a gate separation layer. A bulk passivation layer is arranged over the device layer, and an interfacial layer of III-V material is disposed between the bulk passivation layer and the device layer in such a way that the source region, the drain region and the gate region extend through the bulk passivation layer and the interfacial layer, to abut the device layer.

Abstract: A high-electron mobility transistor (HEMT) device employing a gate protection layer is provided. A substrate has a channel layer arranged over the substrate and has a barrier layer arranged over the channel layer. The channel and barrier layers define a heterojunction, and a gate structure is arranged over a gate region of the barrier layer. The gate structure includes a gate arranged over a cap, where the cap is disposed on the barrier layer. The gate protection layer is arranged along sidewalls of the cap and arranged below the gate between opposing surfaces of the gate and the cap. Advantageously, the gate protection layer passivates the gate, reduces leakage current along sidewalls of the cap, and improves device reliability and threshold voltage uniformity. A method for manufacturing the HEMT device is also provided.

Abstract: The semiconductor device includes a substrate, a first GaN field effect transistor, a second GaN field effect transistor, and a GaN diode. The first GaN field effect transistor is disposed on or above the substrate, and the first GaN field effect transistor is a depletion mode field effect transistor. The second GaN field effect transistor is disposed on or above the substrate, and the second GaN field effect transistor is an enhancement mode field effect transistor. The GaN diode is disposed on or above the substrate. The first GaN field effect transistor, the second GaN field effect transistor, and the GaN diode are disposed on or above a same side of the substrate and electrically connected to each other.

Abstract: The present disclosure relates to a structure and method of forming a low damage passivation layer for III-V HEMT devices. In some embodiments, the structure has a bulk buffer layer disposed over a substrate and a device layer of III-V material disposed over the bulk buffer layer. A source region, a drain region and a gate region are disposed above the device layer. The gate region comprises a gate electrode overlying a gate separation layer. A bulk passivation layer is arranged over the device layer, and an interfacial layer of III-V material is disposed between the bulk passivation layer and the device layer in such a way that the source region, the drain region and the gate region extend through the bulk passivation layer and the interfacial layer, to abut the device layer.

Abstract: An aspect of the invention provides an electric curtain. The electric curtain includes a sunlight detector for obtaining light information of sunlight and a light modulation device capable of receiving the sunlight and for adjusting an emergent angle of the sunlight to refract the sunlight to a ceiling of a room.

Abstract: The disclosure provides a light modulating module attached on a display side of a reflective display apparatus, including: a light source portion capable of providing an illumination light beam, wherein the illumination light beam is capable of being transmitted to the reflective display apparatus, and the reflective display apparatus is adapted to reflect the illumination light beam to generate an image light beam; and an image light modulating device is disposed above the reflective display apparatus and disposed in a light path of the image light beam, wherein the image light modulating device is capable of modulating a direction and/or a polarization state of the image light beam, and the image light beam is emitted to either a left or right eye of a viewer to form an autostereoscopic image perceivable to the viewer after the image light beam passes through the image light modulating device.

Abstract: A high-electron mobility transistor (HEMT) device employing a gate protection layer is provided. A substrate has a channel layer arranged over the substrate and has a barrier layer arranged over the channel layer. The channel and barrier layers define a heterojunction, and a gate structure is arranged over a gate region of the barrier layer. The gate structure includes a gate arranged over a cap, where the cap is disposed on the barrier layer. The gate protection layer is arranged along sidewalls of the cap and arranged below the gate between opposing surfaces of the gate and the cap. Advantageously, the gate protection layer passivates the gate, reduces leakage current along sidewalls of the cap, and improves device reliability and threshold voltage uniformity. A method for manufacturing the HEMT device is also provided.

Abstract: An aspect of the invention provides a display with an adjustable focus mechanism. The display with an adjustable focus mechanism includes a display panel for emitting a plurality of rays to form an image; a light modulation device for receiving the rays from the display panel and adjusting an emergent angle of each ray; and a controller for providing a control signal to drive the light modulation device by estimating the emergent angle of the each of the rays according to an eyesight data of a user and a distance between the user and the display.

Abstract: A breast massage device includes a main body; a drive unit installed within the main body; and a massage disk mounted on the main body and electrically coupled with the drive unit so as to be driven rotatably thereby, the massage disk having an external surface that is used for covering a breast and that is contoured to possess at least two arcuated areas extending in an asymmetric inclination manner relative to each other, and a plurality of massage elements mounted rotatably on the arcuated areas such that the massage elements are rotatable relative to the external surface upon activation of the drive unit.

Abstract: Disclosed is an image display apparatus, including a display device displaying right-eye images and left-eye images. A light-modulating device attached to the display device; and a temperature sensor monitoring the light-modulating device temperature. The light-modulating device deflects the right-eye and left-eye images to an observer's right and left eyes respectively without a temperature variation in the temperature sensor.