Patents by Inventor Ming-Yi Wang
Ming-Yi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10177058Abstract: An encapsulating composition and a semiconductor package are provided. The encapsulating composition adapted to encapsulate a semiconductor die includes a photosensitive dielectric material and a polarizable compound suspended in the photosensitive dielectric material. The polarizable compound within a predetermined region of the encapsulating composition affected by an external stimulus is arranged uniformly in a thickness direction to provide a conductive path penetrating through the photosensitive dielectric material along the thickness direction. The semiconductor package includes the encapsulating composition encapsulating the semiconductor die, a first and a second redistribution layer. The first and the second redistribution layer disposed on the opposite sides of the encapsulating composition are electrically connected each other through the encapsulating composition. A manufacturing method of the semiconductor package is also provided.Type: GrantFiled: January 26, 2018Date of Patent: January 8, 2019Assignee: Powertech Technology Inc.Inventors: Ming-Yi Wang, Kun-Yung Huang
-
Patent number: 9832637Abstract: A connection information sharing system is applied in a mesh network environment which has at least one controlled device within. A connection information sharing method thereof includes the steps of: performing a transferring process, including: integrating a connection data to an integration data; converting the integration data to generate a connection code; performing a receiving process, including: reading the connection code; restoring the connection code to the integration data; and establishing a connection with the at least one controlled device via the integration data.Type: GrantFiled: August 24, 2015Date of Patent: November 28, 2017Assignee: Gunitech Corp.Inventors: Shih-Chao Sheng, Ming-Yi Wang
-
Patent number: 9749777Abstract: A message notification method is applied to a message transmitting-receiving device with a memory module, and the message transmitting-receiving device is linked to a first electronic device. The message notification method includes the steps of receiving a memo message from the first electronic device, and storing the memo message in the memory module; sending a broadcast signal; receiving a connection signal transmitted by a second electronic device after the second electronic device receives the broadcast signal; and linking the message transmitting-receiving device and the second electronic device according to the connection signal, and sending the memo message to the second electronic device.Type: GrantFiled: February 1, 2016Date of Patent: August 29, 2017Assignee: Gunitech Corp.Inventors: Chien-Ju Hung, Huan-Ruei Shiu, Shih-Chao Sheng, Ming-Yi Wang, Enoch Zhao
-
Publication number: 20160302056Abstract: A connection information sharing system, a computer program, and a connection information sharing method thereof are disclosed. The connection information sharing system is applied in a mesh network environment which has at least one controlled device within. The method includes the steps of: performing a transferring process, including: integrating a connection data to an integration data; and converting the integration data to generate a connection code; and performing a receiving process, including: reading the connection code; restoring the connection code to the integration data; and establishing a connection with the at least one controlled device via the integration data.Type: ApplicationFiled: August 24, 2015Publication date: October 13, 2016Inventors: Shih-Chao Sheng, Ming-Yi Wang
-
Publication number: 20160302239Abstract: A network connection module, a computer program, and a network connection method thereof are disclosed. The method is used for allowing a portable electronic device to connect to a node in a mesh network environment. The method includes the steps of: searching a plurality of nodes; determining whether there is a specific node in the plural of nodes; if yes, setting the specific node as a bridging point; if not, setting a node with the strongest signal strength in the plurality of nodes as the bridge point; and broadcasting to the other nodes via the bridge point under the mesh network environment.Type: ApplicationFiled: September 30, 2015Publication date: October 13, 2016Applicant: Gunitech Corp.Inventors: Shih-Chao Sheng, Ming-Yi Wang, Enoch Zhao, Huan-Ruei Shiu, Chien-Ju Hung
-
Publication number: 20160241990Abstract: A message notification method is disclosed. The message notification method is applied to a message transmitting-receiving device with a memory module, and the message transmitting-receiving device is linked to a first electronic device. The message notification method includes the following steps of: receiving a memo message from the first electronic device, and storing the memo message in the memory module; sending a broadcast signal; receiving a connection signal transmitted by a second electronic device after the second electronic device receives the broadcast signal; and linking the message transmitting-receiving device and the second electronic device according to the connection signal, and sending the memo message to the second electronic device.Type: ApplicationFiled: February 1, 2016Publication date: August 18, 2016Inventors: Chien-Ju Hung, Huan-Ruei Shiu, Shih-Chao Sheng, Ming-Yi Wang, Enoch Zhao
-
Patent number: 9379043Abstract: Disclosed is a TSV structure having insulating layers with embedded voids, including a chip layer, a dielectric liner and a conductive filler. There is at least a via reentrant from one surface of the semiconductor body of the chip layer. A plurality of air-gap cavities are formed on the sidewall of the via where the cavities have a depth-to-width ratio not less than one. The dielectric liner covers the sidewall of the via without filling into the air-gap cavities. The conductive filler is disposed in the via without filling into the air-gap cavities due to the isolation of the dielectric liner so as to form an air insulating layer with a plurality of enclosed voids embedded between the semiconductor body and the dielectric liner. Accordingly, RC Delay of the TSV structure can be improved.Type: GrantFiled: February 10, 2015Date of Patent: June 28, 2016Assignee: POWERTECH TECHNOLOGY INC.Inventors: Ming-Yi Wang, Chao-Shun Chiu, Yen-Chu Chen
-
Patent number: 7863082Abstract: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.Type: GrantFiled: February 26, 2009Date of Patent: January 4, 2011Assignee: United Microelectronics Corp.Inventors: Jhy-Jyi Sze, Ming-Yi Wang, Junbo Chen
-
Publication number: 20090308154Abstract: The present invention relates to a fuel cartridge structure with sensor apparatus, comprising a main fuel solution tank provided with a casing with accommodation space, the accommodation space being used for storing the fuel solution; and a sensor apparatus mainly having two sensor components, the two sensor components being disposed on exterior surface or in the structure of the casing of the main fuel solution tank for achieving the objective of measurement.Type: ApplicationFiled: December 22, 2008Publication date: December 17, 2009Applicant: SYSPOTEK CORPORATIONInventors: Ming Yao Dong, Yung Lieh Chien, Zhi Cheng Chen, Ming Yi Wang
-
Patent number: 7564083Abstract: An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.Type: GrantFiled: February 25, 2005Date of Patent: July 21, 2009Assignee: United Microelectronics Corp.Inventors: Jhy-Jyi Sze, Junbo Chen, Ming-Yi Wang
-
Publication number: 20090162971Abstract: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.Type: ApplicationFiled: February 26, 2009Publication date: June 25, 2009Inventors: Jhy-Jyi Sze, Ming-Yi Wang, Junbo Chen
-
Patent number: 7518171Abstract: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.Type: GrantFiled: April 19, 2006Date of Patent: April 14, 2009Assignee: United Microelectronics Corp.Inventors: Jhy-Jyi Sze, Ming-Yi Wang, Junbo Chen
-
Patent number: 7381293Abstract: A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap or berline wall between the insert ring and the wafer support. In one embodiment, the convex inner surface is convexly-tapered. In another embodiment, the convex inner surface is convexly-curved. Throughout etching of multiple successive substrates on the wafer support, accumulations of polymer material on the inner surface of the insert ring are prevented or at least substantially reduced. Consequently, polymer peeling is eliminated or reduced and operational intervals for the processing chamber or system between periodic maintenance or cleanings, are prolonged.Type: GrantFiled: January 9, 2003Date of Patent: June 3, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Yi Wang, Jeng-Yen Tsai, Jeng-Chiang Chuang, Chon-Yai Tasi
-
Publication number: 20070249077Abstract: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.Type: ApplicationFiled: April 19, 2006Publication date: October 25, 2007Inventors: Jhy-Jyi Sze, Ming-Yi Wang, Junbo Chen
-
Publication number: 20060192261Abstract: An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.Type: ApplicationFiled: February 25, 2005Publication date: August 31, 2006Inventors: Jhy-Jyi Sze, Junbo Chen, Ming-Yi Wang
-
Patent number: 7008815Abstract: A method of manufacturing a self-aligned guard ring of a photo diode. The method includes defining a photo diode region on a semiconductor substrate and an isolation matter surrounding the photo diode region, forming a photo sensor in the photo diode region, covering a first mask on the photo sensor, forming a spacer around the first mask, covering a second mask on an edge of the isolation matter, and utilizing the first mask, the second mask, and the spacer to form a self-aligned guard ring surrounding the photo sensor.Type: GrantFiled: October 5, 2004Date of Patent: March 7, 2006Assignee: United Microelectronics Corp.Inventors: Jhy-Jyi Sze, Ming-Yi Wang, Junbo Chen
-
Publication number: 20040134617Abstract: A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap or berline wall between the insert ring and the wafer support. In one embodiment, the convex inner surface is convexly-tapered. In another embodiment, the convex inner surface is convexly-curved. Throughout etching of multiple successive substrates on the wafer support, accumulations of polymer material on the inner surface of the insert ring are prevented or at least substantially reduced. Consequently, polymer peeling is eliminated or reduced and operational intervals for the processing chamber or system between periodic maintenance or cleanings, are prolonged.Type: ApplicationFiled: January 9, 2003Publication date: July 15, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Yi Wang, Jeng-Yen Tsai, Jeng-Chiang Chuang, Chon-Yai Tasi