Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.

Abstract: The present disclosure relates to a lithium ion battery including an electrode assembly; and an electrolytic solution for infiltrating the electrode assembly and an electrical apparatus including the same, wherein the electrode assembly includes an electrode body, a positive electrode tab, and a negative electrode tab. The electrode body includes a positive electrode plate, a negative electrode plate, and a separator that are wound together around an axis. The positive electrode plate includes a positive current collector and a positive electrode material layer provided on at least one surface of the positive electrode current collector. In an axial direction (X), the electrode body has two opposite side portions, and the positive electrode tab and the negative electrode tab extend from the two side portions of the electrode body, respectively. A diffusion rate v of the electrolytic solution to the electrode body is from 0.01 ?g/s to 5 ?g/s.

Abstract: The present invention relates to a wireless communication relay system for an unmanned vehicle includes a control station providing as a console for an implementation of a remote control; an unmanned mission vehicle operated in a first area and receiving the remote control from the control station through a communication link; and an unmanned relay vehicle operated in a second area and in the communication link between the control station and the unmanned mission vehicle.

Abstract: The present application relates to a lithium ion battery, comprising: a positive electrode plate, a negative electrode plate, a separator disposed between the positive electrode plate and the negative electrode plate, and an electrolytic solution, the positive electrode plate including a positive electrode current collector and a positive electrode active material layer provided on at least one side of the positive electrode current collector, and the electrolytic solution including an organic solvent, a lithium salt and an additive, wherein the lithium salt comprises a primary lithium salt, the primary lithium salt is a first compound in an amount of 30% or more relative to the total molar amount of the lithium salt, and the first compound has a structure represented by the following formula I, and wherein the additive comprises a second compound represented by the following formula II.

Abstract: An electrochromic mirror module including a cover lens, a connecting layer, and an electrochromic device is provided. The connecting layer includes a first absorbing material. The connecting layer connects between the cover lens and the electrochromic device. The electrochromic mirror module is configured to receive an incident light, and the incident light sequentially transmits through the cover plate and the connection layer to reach the electrochromic device. The first absorbing material is configured to absorb light of the incident light, whose wavelength falls in a first spectrum, and the wavelength of the first spectrum fall within the range of 570 nm to 720 nm.

Abstract: A reticle retaining system comprising an inner pod and an outer pod. The inner pod comprises an inner base and an inner cover configured to couple to the inner base thereby forming an interior for housing a received workpiece, and a hold down pin movably arranged through the inner cover and configured to press the received workpiece. The outer pod comprises an outer base configured to receive the inner base, an outer cover, and a pushing element. Wherein the hold down pin, the outer cover and the pushing element have charge dissipation property. When the pushing element pushes the hold down pin to press the workpiece, a charge dissipation path from the received workpiece, through the hold down pin and the pushing element, to the outer cover is established.

Abstract: Methods are provided for remotely starting up one or a plurality of vehicles. These methods involve starting up hardware and/or software modules of the vehicle in a particular order so as to account for dependencies among the various modules. In one form, states of various hardware and/or software modules in the vehicle, and errors observed in starting up various modules and troubleshooting is applied in an automated manner. Moreover, the methods may involve ensure proper startup of modules for performing a localization procedure for the vehicle.

Abstract: A package structure and method for forming the same are provided. The package structure includes a conductive layer formed over a first substrate, and a dielectric layer formed over the conductive layer. The package structure includes a metal-insulator-metal (MIM) capacitor embedded in the dielectric layer, and a shielding layer formed over the MIM capacitor. The shielding layer is insulated from the MIM capacitor by the dielectric layer. The package structure also includes a first through via formed through the MIM capacitor, and the first through via is connected to the conductive layer, and the first through via is insulated from the shielding layer.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The package comprises a die, through interlayer vias (TIVs), a dielectric film, a backside film and solder paste portions. The TIVs are disposed beside the semiconductor die and a molding compound laterally surrounds the die and the TIVs. The dielectric film is disposed on a backside of the semiconductor die, and the backside film is disposed on the dielectric film. The backside film has at least one of a coefficient of thermal expansion (CTE) and a Young's modulus larger than that of the dielectric film. The solder paste portions are disposed on the TIVs and located within openings penetrating through the dielectric film and the backside film. There is a recess located at an interface between the dielectric film and the backside film within the opening.

Abstract: Systems and methods for time-resolved spectroscopy. Exemplary methods include: providing first light and second light using an excitation source; receiving first scattered light from a material responsive to the providing the first light; signaling the detector, after a delay, to provide a first spectrum of the received first scattered light; receiving second scattered light from the material responsive to the providing the second light; signaling the detector, after the delay, to provide a second spectrum of the received second scattered light; recovering a spectrum of the material using the first spectrum and the second spectrum; and identifying at least one molecule of the material using the recovered spectrum and a database of identified spectra.

Abstract: A percutaneous drainage device for draining a fluid collection located under the skin of a patient is disclosed. The percutaneous drainage device includes a penetration component slidably engaged with a cannula. The penetration component has a piercing end adapted to penetrate tissue of a patient and introduce an open end of the cannula to a subcutaneous fluid collection site. The cannula may be held in place in the patient by an anchoring means. The cannula provides a passage through which a fluid collection may be drained from a patient. The cannula may be in fluid communication with a collection vessel, which collects fluid collection transported away from the subcutaneous fluid collection site.

Abstract: A deflectable platen including a first layer formed of a material having a first coefficient of thermal expansion (CTE), and a second layer bonded to the first layer and having a second CTE, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE.

Abstract: A fiber optic cable splice assembly includes: a first fiber optic cable having a first optical fiber with an exposed first exposed splice region, a first ribbon portion adjacent the first optical fiber and a first jacket; a second fiber optic cable having a second optical fiber with an exposed second splice region, a second ribbon portion adjacent the second optical fiber and a second jacket, the second optical fiber fusion-spliced to the first optical fiber; a splice protector that overlies the first and second exposed splice regions; and a first fiber boot attached to the splice protector that overlies the first ribbon portion.

Abstract: A method, an electronic device and a non-transitory computer-readable storage medium for controlling a flexible panel are provided in the present disclosure. The method may be applied to an electronic device, where the electronic device includes a plurality of sensor components and a flexible panel, and the flexible panel includes a display region and a light transmitting region connected with the display region, the method includes: acquiring a preset triggering operation on the electronic device; and generating a switching instruction for instructing the electronic device to switch display states according to the preset triggering operation, where, when the display region covers the plurality of sensor components, the electronic device is in a first display state, and when the light transmitting region covers the plurality of sensor components, the electronic device is in a second display state.

Abstract: A chip structure is provided. The chip structure includes a semiconductor substrate. The chip structure includes a first dielectric layer over the semiconductor substrate. The chip structure includes a first conductive layer over the first dielectric layer. The chip structure includes a second dielectric layer over the first conductive layer and the first dielectric layer. The chip structure includes a first conductive via passing through the second dielectric layer, the first conductive layer, and the first dielectric layer and electrically connected to the first conductive layer. The chip structure includes a second conductive via passing through the second dielectric layer and the first dielectric layer. The chip structure includes a first conductive pad over and in direct contact with the first conductive via. The chip structure includes a second conductive pad over and in direct contact with the second conductive via.

Abstract: Embodiments of the present disclosure relate to a method, a device, and a computer program product for backing up data. A method for backing up data includes: receiving a request for a backup policy for a data from a user, the request indicating a desired backup period for backing up the data; obtaining backup information associated with the data; and generating, based on the desired backup period and the backup information, a backup policy for the data and satisfying a service level agreement.

Abstract: Provided herein is a thermolabile proteinase and methods of using the same. In some embodiments, the thermolabile proteinase may comprise an amino acid sequence that is at least 90% identical to any of SEQ ID NOs:1-11 and at least one amino acid substitution in helix 3. The thermolabile proteinase is active at a temperature in the range of 4° C.-40° C. and is inactivated by raising the temperature to above 50° C., where the proteinase is substantially inactive at 65° C.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and a second fin structure extended above a substrate, and a first source/drain structure formed over the first fin structure. The first source/drain structure is made of an N-type conductivity material. The semiconductor device structure also includes a second source/drain structure formed over the second fin structure, and the second source/drain structure is made of an P-type conductivity material The semiconductor device structure also includes a cap layer formed over the first source/drain structure, wherein the cap layer is made of P-type conductivity material.

Abstract: An integrated-optics MEMS-actuated beam-steering system is disclosed, wherein the beam-steering system includes a lens and a programmable vertical coupler array having a switching network and an array of vertical couplers, where the switching network can energize of the vertical couplers such that it efficiently emits the light into free-space. The lens collimates the light received from the energized vertical coupler and directs the output beam along a propagation direction determined by the position of the energized vertical coupler within the vertical-coupler array. In some embodiments, the vertical coupler is configured to correct an aberration of the lens. In some embodiments, more than one vertical coupler can be energized to enable steering of multiple output beams. In some embodiments, the switching network is non-blocking.

Abstract: A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.