Abstract: A pixel driving circuit, a driving method thereof and an OLED display panel are provided. A plurality of scanning lines and a plurality of data lines of the pixel driving circuit intersect to define a plurality of pixel units, the plurality of pixel units in each row are connected to a corresponding scanning line and a corresponding power line, the plurality of pixel units in each column are connected to a corresponding data line, in a scanning period, scanning signal is input to an end of the scanning line to drive the plurality of pixel units along a first direction, power driving signal is input to an end of the power line opposite to the end of the scanning line to which the scanning signal is input to drive the plurality of pixel units along a second direction, the first direction and the second direction are opposite.

Abstract: A heat dissipation structure comprises a flexible substrate, a graphite sheet, and a heat insulating material. The flexible substrate comprises a first surface and a second surface facing away from the first surface. The graphite sheet is connected to the second surface. At least one containing cavity is defined on an interface between the second surface and the graphite sheet. The heat insulating material is filled in the at least one containing cavity to form a heat insulating structure.

Abstract: An LED package structure includes an LED frame, a driver frame unit, a housing, LED chips, a driver chip, and a light-permeable package body. The LED frame includes a carrying segment and two bent leads connected to the carrying segment. The driver frame unit includes two side frames each having a functional segment and a bent lead. The housing has a cavity exposing the carrying segment and the two functional segments. The bent leads protrude from a lateral surface of the housing, and curvedly extend to a bottom surface of the housing. The LED chips are mounted on the carrying segment. The driver chip is fixed to one of the two functional segments, and is electrically connected to the other functional segment and the LED chips. The light-permeable package body is filled in the cavity so as to embed the LED chips and the driver chip.

Abstract: A package substrate structure includes a first substrate, a second substrate, a plurality of conductive pillars and an adhesive layer. The first substrate includes a plurality of vias and a plurality of pads. The vias and the pads are disposed on the first substrate, and fills the vias. The second substrate is disposed opposite to the first substrate. Each conductive pillar is disposed between the first substrate and the second substrate, where each conductive pillar electrically connects each pad and the second substrate, and the adhesive layer fills the gaps between the conductive pillars. A bonding method of the package substrate structure is also provided.

Abstract: An electronic device includes a casing, a circuit board, an electronic component and a fixing member. The casing includes a fixing pillar and at least one rib. The rib is connected to a periphery of the fixing pillar. The circuit board includes a through hole. The fixing pillar is disposed in the through hole. The circuit board abuts against a second top surface of the rib. A thickness of the circuit board is smaller than a height between a first top surface of the fixing pillar and the second top surface of the rib. The electronic component includes a first metal member. A first ground end of the first metal member is disposed on the first top surface of the fixing pillar. A gap exists between the first ground end and the circuit board. The fixing member fixes the first ground end to the fixing pillar.

Abstract: A method of forming a semiconductor structure is disclosed. A fin structure is formed on a substrate and a trench is formed in the fin structure. The trench has a top corner, an upper portion having an upper sidewall and a lower portion having a lower sidewall. A first dielectric layer is then formed on the substrate and fills the lower portion of the trench. After that, a second dielectric layer is formed on the substrate and covers the top corner and the upper sidewall of the trench. The second dielectric layer also covers an upper surface of the first dielectric layer.

Abstract: A fixing structure for a lighting strip is provided to improve upon the inconvenience in repair of the conventional fixing structure for a light strip. The fixing structure for the lighting strip includes a case provided with a groove, a lighting assembly located in the groove, and a light guiding member received in the groove and covering the lighting assembly.

Abstract: A package structure is provided. The package structure includes a semiconductor die and a protective layer surrounding the semiconductor die. The package structure also includes a conductive structure and a warpage-control element over a same side of the protective layer. A bottom surface of the warpage-control element is higher than a bottom surface of the conductive structure. The bottom surface of the warpage-control element is lower than a top surface of the conductive bump.

Abstract: A portable lighting and warning device includes: a housing; a lighting generator unit; a sensor unit sensing shaking of the housing to generate a sense output; a mode selector unit generating a mode indication signal; a warning generator unit; and a controller unit. In a case where the mode indication signal indicates a lighting mode, the controller unit controls the lighting generator unit to emit light. In a case where the mode indication signal indicates a warning mode, the controller unit waits for a predetermined pause time, and then controls the warning generator unit and the lighting generator unit to output sound and emit light when the sense output corresponds to the shaking of the housing not less than a predetermined level in intensity.

Abstract: A photoresist baking apparatus is provided. The photoresist baking apparatus comprises a baking chamber including an inlet, an outlet and a cover sealed connected thereon. The cover is applied to guide the hot air entering the baking chamber and includes a heating device for maintaining the temperature of the hot air. The heating device is disposed on the cover for heating the hot air flowing to the cover and maintaining the temperature of the hot air to be consistent when the hot air flowing to the outlet, thereby to prevent from the photoresist volatile condensing and dripping due to decreased temperature after the photoresist volatile contacting the cover and affecting the product quality, and to guarantee the temperature homogeneity inside the baking chamber.

Abstract: A method includes providing a black phosphorus (BP) layer over a substrate, forming a dopant source layer over the BP layer, annealing the dopant source layer to drive a dopant from the dopant source layer into the BP layer, and forming a conductive contact over the dopant source layer.

Abstract: A method for cleaning a semiconductor wafer is provided. The method includes placing a semiconductor wafer over a supporter arranged around a central axis of a spin base. The method further includes securing the semiconductor wafer using a clamping member positioned on the supporter. The movement of the semiconductor wafer during the placement of the semiconductor wafer over the supporter is guided by a guiding member located over the clamping member. The method also includes spinning the semiconductor wafer by rotating the spin base about the central axis. In addition, the method includes dispensing a processing liquid over the semiconductor wafer.

Abstract: A channelless basketball includes a bladder body without projection ribs and a bladder body which includes a plurality of cover panels attached on the bladder body in edge to edge manner to completely cover the bladder body. At least some of the cover panels are provided with gripping bands each of which is provided along the peripheral adjoining edge of the respective cover panel for providing good gripping and holding ability for the channelless basketball.

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

Abstract: The present disclosure relates to a flash memory cell that includes a substrate and a floating gate structure over the substrate. The floating gate structure includes a first portion having a first top surface and a first thickness. The floating gate structure also includes a second portion having a second top surface and a second thickness that is different from the first thickness. The floating gate structure further includes a sidewall surface connecting the first and second top surfaces, and an angle between the first top surface and the sidewall surface of the floating gate structure is an obtuse angle. The flash memory cell also includes a control gate structure over the first and second portions of the floating gate structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a lower electrode over the semiconductor substrate. The semiconductor device structure also includes a first oxide layer over the lower electrode, a second oxide layer over the first oxide layer, and a third oxide layer over the second oxide layer. Oxygen ions are bonded more tightly in the second oxide layer than those in the first oxide layer, and oxygen ions are bonded more tightly in the second oxide layer than those in the third oxide layer. The semiconductor device structure further includes an upper electrode over the third oxide layer.

Abstract: A method and system for configuring a network device according to the identity of a plurality of removable wireless communications devices (RWCDs), the method comprising the steps of: determining the identities of the plurality of RWCDs; determining whether the network device is capable of using the plurality RWCDs; retrieving policy settings from an authorized party or a storage medium of the network device according to the identities of the plurality of RWCDs; determining priority of policy settings; and configuring the network device according to the policy settings. The priority of policy settings are based on the positions of the RWCDs when there are conflict among policy settings. The plurality of RWCDs are plugged to the network device and the network device provides wireless wide area network (WAN) connectivity through the plurality of RWCDs.

Abstract: An imaging lens set includes three plastic lens elements, which are a first lens element, a second lens element and a third lens element, and a light blocking sheet. The first lens element includes a first flat abutting portion and a first conical surface. The second lens element includes a second flat abutting portion, a second conical surface, a fourth flat abutting portion and a fourth conical surface. The third lens element includes a third flat abutting portion and a third conical surface. The first flat abutting portion is abutted with the second flat abutting portion, the first conical surface contacts with the second conical surface, and the third conical surface contacts with the fourth conical surface. The light blocking sheet is abutted with the third flat abutting portion and the fourth flat abutting portion, respectively.

Abstract: A semiconductor package structure includes a semiconductor die, at least one wiring structure, an encapsulant and a plurality of conductive elements. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The encapsulant surrounds the semiconductor die. The encapsulant is formed from an encapsulating material, and a Young's Modulus of the encapsulant is from 0.001 GPa to 1 GPa. The conductive elements are embedded in the encapsulant, and are electrically connected to the at least one wiring structure.