Abstract: A concrete and a method for preparing the same are provided. The concrete includes 11 wt % to 20 wt % of sodium, 3 wt % to 6 wt % of magnesium, 7 wt % to 11 wt % of aluminum, 15 wt % to 22 wt % of silicon, 0.4 wt % to 0.7 wt % of potassium, and 49 wt % to 53 wt % of calcium, based on the total weight of sodium, magnesium, aluminum, silicon, potassium, and calcium in the concrete. Additionally, the concrete includes a calcium aluminosilicate compound.

Abstract: A method for calculating heat generation of battery discharging/charging includes the following steps: configuring a battery in a heat insulation component; discharging/charging the battery and measuring the temperature during the discharging/charging of the battery to obtain a measured temperature curve; obtaining an Nth-degree curve fitting equation of temperature-time gradient to temperature by curve fitting a cooling phase of the measured temperature curve; substituting the temperatures of the measured temperature curve into the Nth-degree curve fitting equation to obtain temperature compensation values and forming a compensated temperature curve according to the temperatures and the corresponding temperature compensation values; and, calculating the heat generation value of the battery according to the compensated temperature curve and a thermal conversion model of battery discharging/charging.

Abstract: A porous structure includes 3 wt % to 4.2 wt % of Mg, 14 wt % to 18 wt % of Ca, 12 wt % to 15 wt % of Si, 0.8 wt % to 1.5 wt % of Al, 0.1 wt % to 0.3 wt % of K, 0.4 wt % to 2 wt % of Fe, 7 wt % to 8.5 wt % of Na, 4.8 wt % to 7.6 wt % of B, and 48 wt % to 52 wt % of O.

Abstract: A method of capturing carbon dioxide, including providing a particle containing magnesium oxide, calcium oxide, or a combination thereof; and providing a mixture gas to contact the particle, wherein the mixture gas includes water vapor, carbon dioxide, and nitrogen oxide, and the particle captures the carbon dioxide to form a carbonated particle and a treated gas. The mixture gas has a relative humidity of 25% to 95%, a nitrogen oxide concentration of 20 ppm to 2000 ppm, and a carbon dioxide concentration of 0.05% to 15%.

Abstract: A core-shell particle includes a core and a shell that is wrapped around the core. The core includes aluminum nitride. The shell includes aluminum and a dopant, and the dopant is yttrium, calcium, magnesium, lanthanum, niobium, titanium, copper, or a combination thereof. The aluminum and the dopant in the shell have a weight ratio of 90:10 to 99.9:0.1. The core-shell particle can be sintered to form a ceramic bulk.

Abstract: A porous material including a composite oxide body containing calcium oxide, iron oxide, and silica, and a plurality of inter-connecting microchannel structures is provided. A preparing method of porous material is further provided. With the inter-connecting microchannel structures of the porous material and the advantages of high porosity and large specific surface area, the porous material has a bright prospect in the fields of catalysts, filters, adsorption materials, and fuel carriers.

Abstract: A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

Abstract: A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

Abstract: A porous material including a composite oxide body containing calcium oxide, iron oxide, and silica, and a plurality of inter-connecting microchannel structures is provided. A preparing method of porous material is further provided. With the inter-connecting microchannel structures of the porous material and the advantages of high porosity and large specific surface area, the porous material has a bright prospect in the fields of catalysts, filters, adsorption materials, and fuel carriers.

Abstract: A method of forming a core-shell composite material includes depositing a polysiloxane shell to wrap a ceramic core via chemical vapor deposition for forming a core-shell composite material, wherein the ceramic core is an oxide of metal and silicon, which includes 100 parts by weight of calcium, 50 to 95 parts by weight of iron, 15 to 40 parts by weight of silicon, 2 to 15 parts by weight of magnesium, 2 to 20 parts by weight of aluminum, and 2 to 10 parts by weight of manganese.

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract: An electromagnetic flowmeter with voltage-amplitude conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a voltage-amplitude conductivity-sensing device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrode. The switch is selectively connected to the flow-sensing device or the voltage-amplitude conductivity-sensing device according to the signals sent from the microprocessor. The microprocessor drives the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The microprocessor stops the exciting-current generating device from generating exciting current and computing conductivity of liquid when the switch is electrically connected to the voltage-amplitude conductivity-sensing device.

Abstract: An electromagnetic flowmeter with voltage-amplitude conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a voltage-amplitude conductivity-sensing device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrode. The switch is selectively connected to the flow-sensing device or the voltage-amplitude conductivity-sensing device according to the signals sent from the microprocessor. The microprocessor makes the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The microprocessor makes the exciting-current generating device to stop generating exciting current and computing conductivity of liquid when the switch is electrically connected to the voltage-amplitude conductivity-sensing device.

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract: Provided is a semiconductor device including a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate and an N-type deep well region. The first well region is in the substrate. The second well region is in the substrate proximate to the first well region. The gate is on the substrate and covers a portion of the first well region and a portion of the second well region. The source region is in the first well region at one side of the gate. The drain region is in the second well region at another side of the gate. The dummy gate is on the substrate between the gate and the drain region. The deep well region is in the substrate and surrounds the first and second well regions. An operation method of the semiconductor device is further provided.

Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited to cover the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removed by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate is selectively removed.

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract: A LDMOS includes a gate structure disposed on the surface of a semiconductor substrate, a source region having a first conductivity type, a drain region having the first conductivity type, an isolation region surrounding the source/drain regions, a doped region having a second conductivity type, and a base region having the second conductivity type formed in the doped region. The source/drain regions are respectively disposed on two sides of the gate structure. The doped region surrounds the isolation region, and the bottom of the doped region is deeper than the bottom of the isolation region. The base region is disposed at the surface of the semiconductor substrate.

Abstract: An electromagnetic flowmeter with voltage-amplitude conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a voltage-amplitude conductivity-sensing device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrode. The switch is selectively connected to the flow-sensing device or the voltage-amplitude conductivity-sensing device according to the signals sent from the microprocessor. The microprocessor makes the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The microprocessor makes the exciting-current generating device to stop generating exciting current and computing conductivity of liquid when the switch is electrically connected to the voltage-amplitude conductivity-sensing device.

Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited to cover the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removed by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate is selectively removed.