Patents by Inventor Mingjiao Liu

Mingjiao Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TWO TERMINAL MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR
    Publication number: 20100314660
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical characteristic.
    Type: Application
    Filed: August 20, 2010
    Publication date: December 16, 2010
    Inventors: Ali Salih, Mingjiao Liu
  • TWO TERMINAL MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR
    Publication number: 20100311211
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.
    Type: Application
    Filed: August 17, 2010
    Publication date: December 9, 2010
    Inventors: Ali Salih, Mingjiao Liu, Thomas Keena
  • Low clamp voltage ESD device and method therefor
    Patent number: 7842969
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: November 30, 2010
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, Jr.
  • Two terminal low capacitance multi-channel ESD device
    Patent number: 7812367
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.
    Type: Grant
    Filed: October 15, 2008
    Date of Patent: October 12, 2010
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Ali Salih, Mingjiao Liu, Thomas Keena
  • TWO TERMINAL MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR
    Publication number: 20100090306
    Abstract: In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.
    Type: Application
    Filed: October 15, 2008
    Publication date: April 15, 2010
    Inventors: Ali Salih, Mingjiao Liu, Thomas Keena
  • METHOD OF FORMING AN INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
    Publication number: 20100060349
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Application
    Filed: September 11, 2008
    Publication date: March 11, 2010
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • LOW CLAMP VOLTAGE ESD DEVICE AND METHOD THEREFOR
    Publication number: 20100006889
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Application
    Filed: July 10, 2008
    Publication date: January 14, 2010
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, JR.
  • TRANSIENT VOLTAGE SUPPRESSOR AND METHOD
    Publication number: 20090273876
    Abstract: A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
    Type: Application
    Filed: May 1, 2008
    Publication date: November 5, 2009
    Inventors: Mingjiao Liu, Ali Salih, Emmanuel Saucedo-Flores, Suem Ping Loo
  • TRANSIENT VOLTAGE SUPPRESSOR AND METHOD
    Publication number: 20090273868
    Abstract: A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
    Type: Application
    Filed: May 7, 2008
    Publication date: November 5, 2009
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Mingjiao Liu, Ali Salih, Emmanuel Saucedo-Flores, Suem Ping Loo
  • TRANSIENT VOLTAGE SUPPRESSOR AND METHODS
    Publication number: 20090250720
    Abstract: Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region.
    Type: Application
    Filed: April 4, 2008
    Publication date: October 8, 2009
    Inventors: Emmanuel Saucedo-Flores, Mingjiao Liu, Francine Y. Robb, Ali Salih
  • Multi-channel ESD device and method therefor
    Patent number: 7579632
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: August 25, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Ali Salih, Mingjiao Liu, Sudhama C. Shastri, Thomas Keena, Gordon M. Grivna, John Michael Parsey, Jr., Francine Y. Robb, Ki Chang
  • METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
    Publication number: 20090162988
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Application
    Filed: February 27, 2009
    Publication date: June 25, 2009
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, JR., George Chang
  • Method of forming low capacitance ESD device and structure therefor
    Patent number: 7538395
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: May 26, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, Jr., George Chang
  • MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR
    Publication number: 20090079001
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Inventors: Ali Salih, Mingjiao Liu, Sudhama C. Shastri, Thomas Keena, Gordon M. Grivna, John Michael Parsey, JR., Francine Y. Robb, Ki Chang
  • METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
    Publication number: 20090079022
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, JR., George Chang