Patents by Inventor Minoru Fujita
Minoru Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11946155Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.Type: GrantFiled: December 3, 2019Date of Patent: April 2, 2024Assignee: TDK CORPORATIONInventors: Katsumi Kawasaki, Jun Hirabayashi, Minoru Fujita, Daisuke Inokuchi, Jun Arima, Makio Kondo
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Publication number: 20240106672Abstract: A content generation apparatus capable of easily confirming content data, the information of which is registered in a blockchain, is provided. An image pickup apparatus generates an image file and then immediately calculates a hash value of the image file, and transmits image file information including the hash value to a management system. In response to receipt of a registration completion notification indicating that a process of registering the image file information in a blockchain is completed, the image pickup apparatus stores registration-completed information indicating that the image file information is registered in the blockchain, relating to the image file.Type: ApplicationFiled: November 30, 2023Publication date: March 28, 2024Inventors: DAIYU UENO, KEIICHIRO KUBO, NAOHIKO TSUCHIDA, MINORU SAKAIDA, ATSUSHI FUJITA, KEISUKE TANAKA
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Publication number: 20240070250Abstract: A content generation apparatus capable of guaranteeing that a provider of a content is a generator of the content is provided. The content generation apparatus that generates a content according to an instruction received from a user includes an acquisition unit configured to acquire biometric information of the user, a biometric authentication unit configured to perform biometric authentication of the user based on the biometric information of the user, a hash value generation unit configured to generate a hash value of the content in a case that the biometric authentication of the user has succeeded, and a communication unit configured to transmit the content and information of the content to a management server that registers the hash value and the information of the content in a blockchain. The information of the content includes result information indicating a result of the biometric authentication of the user.Type: ApplicationFiled: August 30, 2023Publication date: February 29, 2024Inventors: NAOHIKO TSUCHIDA, DAIYU UENO, MINORU SAKAIDA, ATSUSHI FUJITA, KEIICHIRO KUBO, KEISUKE TANAKA
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Publication number: 20240072179Abstract: To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A width W1 of an outer peripheral trench formed in the drift layer is larger than a width W2 of a center trench. An outer peripheral wall S1 of the outer peripheral trench is curved so as to approach vertical toward the outside, while an inner peripheral wall S2 thereof is closer to vertical than the outer peripheral wall S1. This relaxes an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.Type: ApplicationFiled: January 28, 2022Publication date: February 29, 2024Inventors: Jun ARIMA, Minoru FUJITA, Katsumi KAWASAKI, Jun HIRABAYASHI
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Publication number: 20240069223Abstract: A radiation imaging device according to one embodiment comprises a radiation detection panel, a base substrate having a support surface configured to support the radiation detection panel, and a housing, wherein: the housing has a top wall and a bottom wall, the base substrate has a protruding portion which protrudes further outward than the radiation detection panel when seen in a direction orthogonal to the support surface, a first extending portion is provided to the support surface of the protruding portion, a second extending portion is provided to a back surface of the protruding portion, the second extending portion being disposed at a position which it faces the first extending portion with the protruding portion interposed therebetween, and the base substrate is supported on the top wall via the first extending portion and is supported on the bottom wall via the second extending portion.Type: ApplicationFiled: November 8, 2023Publication date: February 29, 2024Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Ryuji KYUSHIMA, Kazuki FUJITA, Junichi SAWADA, Takao ARITAKE, Minoru ICHIKAWA, Haruyoshi OKADA, Seiji FUKAMIZU, Shuhei NAMBA
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Patent number: 11908955Abstract: A Schottky barrier diode 1 includes: a semiconductor substrate made of gallium oxide; a drift layer made of gallium oxide; an anode electrode brought into Schottky contact with an upper surface of the drift layer; and a cathode electrode brought into ohmic contact with a lower surface of the semiconductor substrate. A ring-shaped outer peripheral trench is formed in the upper surface of the drift layer, and the anode electrode is partly filled in the outer peripheral trench. A ring-shaped back surface trench is formed in the lower surface of the semiconductor substrate such that the bottom thereof reaches the drift layer. This limits a current path to the area surrounded by the back surface trench, thereby mitigating electric field concentration in the vicinity of the bottom of the outer peripheral trench.Type: GrantFiled: February 4, 2021Date of Patent: February 20, 2024Assignee: TDK CORPORATIONInventors: Jun Arima, Minoru Fujita, Jun Hirabayashi
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Publication number: 20240055536Abstract: To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A part of the anode electrode is embedded in an outer peripheral trench and a center trench through an insulating film. The insulating film is formed such that the thickness thereof in the depth direction of the outer peripheral trench becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode embedded in the outer peripheral trench is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.Type: ApplicationFiled: January 28, 2022Publication date: February 15, 2024Inventors: Jun ARIMA, Minoru FUJITA, Katsumi KAWASAKI, Jun HIRABAYASHI
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Patent number: 11846037Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.Type: GrantFiled: March 23, 2022Date of Patent: December 19, 2023Assignee: TDK CORPORATIONInventors: Katsumi Kawasaki, Jun Arima, Minoru Fujita, Jun Hirabayashi
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Publication number: 20230352601Abstract: A Schottky barrier diode includes an anode electrode which is brought into Schottky contact with a drift layer, a cathode electrode which is brought into ohmic contact with a semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, a metal film covering the inner wall of the trench through the insulating film and electrically connected to the anode electrode, and a field insulating layer. The field insulating layer includes a first part positioned between an upper surface of the drift layer and the anode electrode and a second part covering the inner wall of the trench through the metal film and insulating film. With this configuration, even when misalignment occurs between the trench and the field insulating layer, dielectric breakdown can be prevented.Type: ApplicationFiled: October 5, 2020Publication date: November 2, 2023Inventors: Minoru FUJITA, Jun ARIMA, Katsumi KAWASAKI, Jun HIRABAYASHI
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Patent number: 11699766Abstract: An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.Type: GrantFiled: August 30, 2018Date of Patent: July 11, 2023Assignee: TDK CORPORATIONInventors: Jun Arima, Jun Hirabayashi, Minoru Fujita, Katsumi Kawasaki, Daisuke Inokuchi
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Publication number: 20230113129Abstract: A Schottky barrier diode 1 includes: a semiconductor substrate made of gallium oxide; a drift layer made of gallium oxide; an anode electrode brought into Schottky contact with an upper surface of the drift layer; and a cathode electrode brought into ohmic contact with a lower surface of the semiconductor substrate. A ring-shaped outer peripheral trench is formed in the upper surface of the drift layer, and the anode electrode is partly filled in the outer peripheral trench. A ring-shaped back surface trench is formed in the lower surface of the semiconductor substrate such that the bottom thereof reaches the drift layer. This limits a current path to the area surrounded by the back surface trench, thereby mitigating electric field concentration in the vicinity of the bottom of the outer peripheral trench.Type: ApplicationFiled: February 4, 2021Publication date: April 13, 2023Inventors: Jun ARIMA, Minoru FUJITA, Jun HIRABAYASHI
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Patent number: 11626522Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.Type: GrantFiled: September 26, 2018Date of Patent: April 11, 2023Assignees: TDK CORPORATION, TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Jun Arima, Jun Hirabayashi, Minoru Fujita, Kohei Sasaki
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Patent number: 11621357Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.Type: GrantFiled: October 9, 2019Date of Patent: April 4, 2023Assignees: TDK CORPORATION, TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Jun Arima, Minoru Fujita, Jun Hirabayashi, Kohei Sasaki
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Publication number: 20230039171Abstract: A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and formed on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, and a protective film covering the anode electrode, wherein a part of the protective film is embedded in the trench. The part of the protective film is thus embedded in the trench, so that adhesion performance between the anode electrode and protective film is enhanced. This makes it possible to prevent peeling at the boundary between the anode electrode and the protective film.Type: ApplicationFiled: October 5, 2020Publication date: February 9, 2023Inventors: Jun ARIMA, Minoru FUJITA, Katsumi KAWASAKI, Jun HIRABAYASHI
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Patent number: 11557681Abstract: An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.Type: GrantFiled: October 9, 2019Date of Patent: January 17, 2023Assignees: TDK CORPORATION, TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Jun Arima, Minoru Fujita, Jun Hirabayashi, Kohei Sasaki
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Patent number: 11492724Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.Type: GrantFiled: January 25, 2019Date of Patent: November 8, 2022Assignee: TDK CORPORATIONInventors: Katsumi Kawasaki, Jun Hirabayashi, Minoru Fujita, Daisuke Inokuchi, Jun Arima, Makio Kondo
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Patent number: 11469334Abstract: An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.Type: GrantFiled: March 11, 2019Date of Patent: October 11, 2022Assignees: TDK CORPORATION, TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Jun Arima, Minoru Fujita, Jun Hirabayashi, Kohei Sasaki
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Publication number: 20220307157Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.Type: ApplicationFiled: March 23, 2022Publication date: September 29, 2022Applicant: TDK CORPORATIONInventors: Katsumi KAWASAKI, Jun ARIMA, Minoru FUJITA, Jun HIRABAYASHI
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Patent number: 11456388Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 ?m in a region including the inner surface of the trench.Type: GrantFiled: February 25, 2019Date of Patent: September 27, 2022Assignees: Tamura Corporation, Novel Crystal Technology, Inc., TDK CorporationInventors: Kohei Sasaki, Minoru Fujita, Jun Hirabayashi, Jun Arima
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Publication number: 20220056611Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.Type: ApplicationFiled: December 3, 2019Publication date: February 24, 2022Applicant: TDK CORPORATIONInventors: Katsumi KAWASAKI, Jun HIRABAYASHI, Minoru FUJITA, Daisuke INOKUCHI, Jun ARIMA, Makio KONDO