Abstract: A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field.

Abstract: A unit element of a magnetic device or a ferroelectric device and magnetic particles of a magnetic recording medium are provided. The outline of the unit element and the magnetic particles is arranged so as to have a portion topologically identical to one of a letter-C shape and a letter-S shape that correspond to the magnetization or polarization distribution immediately before the rotation of magnetization or polarization.

Abstract: The present invention relates to a force sensing device, and in particular to a force sensing device for sensing an oscillating force or for application as a filter. In general terms, the invention proposes a force sensing device having a magneto electric material and a magnetic element moveable relative thereto in response to an applied force. The magneto electric material is exposed to the magnetic field of the magnetic element which has a magnetisation direction parallel to the direction of the movement.

Abstract: A magnetic memory device, in which a tunnel magneto resistance element that establishes a connection between a write word line (first interconnection) and a bit line (second interconnection) is provided within a region in which the write word line and the bit line cross in a grade-separated manner. The magnetic memory device comprises a through hole that is provided in such a manner that is insulated from the write word line and also extending through the write word line so as to establish a connection between the tunnel magneto resistance element and a second landing pad (interconnection layer) lower than the write word line, and a contact that is formed in the through hole through a side wall barrier film so as to establish a connection between the tunnel magneto resistance element and the second landing pad.

Abstract: The present invention relates to a force sensing device, and in particular to a force sensing device for sensing an oscillating force or for application as a filter. In general terms, the invention proposes a force sensing device having a magneto electric material and a magnetic element moveable relative thereto in response to an applied force. The magneto electric material is exposed to the magnetic field of the magnetic element which has a magnetisation direction parallel to the direction of the movement.

Abstract: The invention provides a magnetic memory device wherein an imbalance between variation threshold values for different magnetization directions of storage elements thereof such as a displacement of the center of an asteroid curve from the origin can be corrected readily without modifying the storage elements themselves. The magnetic memory device includes a plurality of storage elements of the magnetoresistive type capable of storing information making use of a variation of the magnetization direction thereof, and a magnetic field application element for applying a bias magnetic field to the storage elements.

Abstract: A first ferromagnetic layer is made to show a single magnetic domain to prevent any magnetic walls from appearing. A pair of bias layers 4 are made of a hard magnetic material showing a high resistivity are arranged at opposite ends of a TMR thin film 3. As a result, the sense current flowing through the TMR thin film 3 is prevented from diverting to the bias layers 4. Thus, a sufficiently strong bias magnetic field can be applied to the TMR thin film 3. As a result, the free layer 13 of the TMR thin film 3 is made to show a single magnetic domain to prevent any magnetic walls from appearing.

Abstract: A unit element of a magnetic device or a ferroelectric device and magnetic particles of a magnetic recording medium are provided. The outline of the unit element and the magnetic particles is arranged so as to have a portion topologically identical to one of a letter-C shape and a letter-S shape that correspond to the magnetization or polarization distribution immediately before the rotation of magnetization or polarization.

Abstract: A magnetic recording medium includes an anti-ferromagnetic layer 2 layered on at least one of the opposite major surfaces in a direction along the thickness of a ferromagnetic recording layer 3. It is possible for magnetization in the vicinity of a surface of an anti-ferromagnetic layer 2 facing a ferromagnetic recording layer 3 to be rotated simultaneously with rotation of magnetization of the ferromagnetic recording layer 3. It is also possible for the intensity of exchange coupling between the two layers to be larger than the total magnetic anisotropy of the anti-ferromagnetic layer 2. It is similarly possible for the intensity of the exchange coupling between the two layers to be smaller than the total magnetic anisotropy of the anti-ferromagnetic layer 2 and larger than the magnetic domain energy of the anti-ferromagnetic layer 2.

Abstract: The invention provides a magnetic memory device wherein an imbalance between variation threshold values for different magnetization directions of storage elements thereof such as a displacement of the center of an asteroid curve from the origin can be corrected readily without modifying the storage elements themselves. The magnetic memory device includes a plurality of storage elements of the magnetoresistive type capable of storing information making use of a variation of the magnetization direction thereof, and a magnetic field application element for applying a bias magnetic field to the storage elements.

Abstract: A magnetic recording medium includes an anti-ferromagnetic layer 2 layered on at least one of the opposite major surfaces in a direction along the thickness of a ferromagnetic recording layer 3. It is possible for magnetization in the vicinity of a surface of an anti-ferromagnetic layer 2 facing a ferromagnetic recording layer 3 to be rotated simultaneously with rotation of magnetization of the ferromagnetic recording layer 3. It is also possible for the intensity of exchange coupling between the two layers to be larger than the total magnetic anisotropy of the anti-ferromagnetic layer 2. It is similarly possible for the intensity of the exchange coupling between the two layers to be smaller than the total magnetic anisotropy of the anti-ferromagnetic layer 2 and larger than the magnetic domain energy of the anti-ferromagnetic layer 2.

Abstract: The first ferromagnetic layer is made to show a single magnetic domain to prevent any magnetic wall from appearing. A pair of bias layers 4, 4 made of a hard magnetic material showing a high resistivity are arranged at opposite ends of a TMR thin film 3. As a result, the sense current flowing through the TMR thin film 3 is prevented from diverting to the bias layers 4, 4. Thus, a sufficiently strong bias magnetic field can be applied to the TMR thin film 3. As a result, the free layer 13 of the TMR thin film 3 is made to show a single magnetic domain to prevent any magnetic wall from appearing.