Abstract: A composite crucible 10 is characterized in the use of mullite (3Al2O3.2SiO2) as the basic material of the crucible. The composite crucible 10 has a crucible body 11 made of mullite material whose main component is alumina and silica, and a transparent vitreous silica layer 12 formed on the inner surface of the crucible body 11. The thickness of the transparent vitreous silica layer 12 is smaller than that of the crucible body 11. The crucible body 11 is formed by the slip casting method, and the transparent vitreous silica layer 12 is formed by the thermal spraying method.

Abstract: The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible 10 is characterized in the use of mullite (3Al2O3.2SiO2) as the basic material of the crucible. The composite crucible 10 has the crucible body 11 made of mullite material whose main component is alumina and silica, and a transparent vitreous silica layer 12 formed on the inner surface of the crucible body 11. The thickness of the transparent vitreous silica layer 12 is smaller than that of the crucible body 11. The crucible body 11 can be formed by the slip casting method, and the transparent vitreous silica layer 12 can be formed by the thermal spraying method.

Abstract: The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion.

Abstract: Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 ?m is 10% or more and less than 30%, the content of bubbles having a diameter of 40 ?m or more and less than 90 ?m is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 ?m is 10% or more and less than 30%.

Abstract: To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, an apparatus thereof, and a purified silica powder. A purification method of a silica powder comprises making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of I000° C. or more.

Abstract: Provided is an apparatus for manufacturing a vitreous silica crucible, which is capable of stably manufacturing a high quality vitreous silica crucible by stabilizing heat generation through an arc discharge. The apparatus for manufacturing a vitreous silica crucible includes a mold that defines a shape of a vitreous silica crucible, carbon electrodes that generate an arc discharge for fusing a silica powder molded body formed in the mold, and a power supply device that supplies power to the carbon electrodes. The power supply device includes a saturable reactor that is provided on a supply path of the power to the carbon electrodes and has variable reactance, and a control device that controls the power supplied to the carbon electrodes by changing the reactance of the saturable reactor.

Abstract: Provided is an apparatus for manufacturing a vitreous silica crucible, which is capable of stably manufacturing a high quality vitreous silica crucible by stabilizing heat generation through an arc discharge. The apparatus for manufacturing a vitreous silica crucible includes a mold that defines a shape of a vitreous silica crucible, carbon electrodes that generate an arc discharge for fusing a silica powder molded body formed in the mold, and a power supply device that supplies power to the carbon electrodes. The power supply device includes a saturable reactor that is provided on a supply path of the power to the carbon electrodes and has variable reactance, and a control device that controls the power supplied to the carbon electrodes by changing the reactance of the saturable reactor.

Abstract: A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles.

Abstract: The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion.

Abstract: The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible 10 is characterized in the use of mullite (3Al2O3.2SiO2) as the basic material of the crucible. The composite crucible 10 has the crucible body 11 made of mullite material whose main component is alumina and silica, and a transparent vitreous silica layer 12 formed on the inner surface of the crucible body 11. The thickness of the transparent vitreous silica layer 12 is smaller than that of the crucible body 11. The crucible body 11 can be formed by the slip casting method, and the transparent vitreous silica layer 12 can be formed by the thermal spraying method.

Abstract: In order to provide method and apparatus for manufacturing a vitreous silica crucible with little mixing of foreign matter and stable arc during arc melting, the method and apparatus for manufacturing a vitreous silica crucible have a device which blows off air from the side of arc electrodes toward a melting space of a mold, and air discharge ports which discharge the air within the heating furnace, and perform forced supply of air into the melting space during melting to make the atmospheric pressure of the melting space higher than the surroundings, and preferably, form an air pressure difference of 100 Pa or more between the melting space and the surroundings, thereby performing melting.

Abstract: A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion.

Abstract: Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall 15 is placed above the rotating mold 10. Electrodes 13 for heating and fusing are inserted into through-holes 16 penetrating in a thickness direction, and are directed toward the rotating mold 10. A rocking unit 40 is provided on an upper side of the partition wall 15 and rocks the electrodes 13 around virtual rocking axes P, and the virtual rocking axes P pass through the through-holes 16.

Abstract: A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 ?m/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.

Abstract: A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.

Abstract: The method of producing a vitreous silica crucible, comprises deposition step of depositing silica powder on an inner wall surface of a cylindrical rotation mold having a bottom while rotating the mold; and a fusion step to obtain a vitreous silica crucible by heating and fusing the silica powder deposited on the inner wall surface of the mold and thereby vitrifying the silica powder. In the deposition step, a density of the deposited silica powder layer on the inner wall surface of the mold is controlled within a predetermined range by controlling the electrostatic charging voltage of the silica powder to be in a range of 1.0 kV or less in absolute value, and supplying the thus controlled silica powder to the inner wall surface of the mold. Thus, a wall thickness of the vitreous silica crucible is controlled.

Abstract: [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. [Means for Solving the Problems] A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.

Abstract: [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. [Means for Solving the Problems] A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.

Abstract: To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.

Abstract: A silica glass crucible including an outer surface layer formed of a bubble-containing silica glass layer and an inner surface layer formed of a silica glass layer whose bubbles are invisible to the naked eye, so as to sufficiently disperse heat from the external radiation thereby preventing temperature irregularity in the silicon melt, and at the same time, exhibit excellent heat conductivity thereby giving a uniformly heated state over a wide range in the entire crucible without taking a long time for increasing the temperature to form a silicon melt, wherein an intermediate layer is interposed between the outer surface layer and the inner surface layer while in the intermediate layer, a bubble-containing silica glass layer (bubble-containing layer) including bubbles with a diameter of 100 ?m or smaller by 0.1% or more in the volumetric bubble content and a silica glass layer (transparent glass layer) including the bubbles by 0.05% or less in the volumetric bubble content are laminated.