Patents by Inventor Minoru Kanda
Minoru Kanda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100314400Abstract: Provided is a vitreous silica crucible which can restrain inward collapse deformation at high temperature during pulling even when the crucible has a large opening diameter. The vitreous silica crucible has an outer layer made of natural fused silica and an inner layer made of synthetic fused silica. The straight body section is outwardly-widened upwardly. Preferably, the difference in inner diameter of the lower and upper ends of the outwardly-widened section is 0.1% or more. The inner layer made of synthetic fused silica on the corner section has a layer thickness which is 20% to 80% of the wall thickness of the central portion of the corner section. Preferably, the inner layer made of synthetic fused silica on the straight body section and the bottom section is thinner than that on the corner section.Type: ApplicationFiled: February 4, 2009Publication date: December 16, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventor: Minoru Kanda
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Publication number: 20100251959Abstract: Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 ?m is 10% or more and less than 30%, the content of bubbles having a diameter of 40 ?m or more and less than 90 ?m is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 ?m is 10% or more and less than 30%.Type: ApplicationFiled: April 1, 2010Publication date: October 7, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Makiko KODAMA, Hiroshi KISHI, Minoru KANDA
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Publication number: 20100244311Abstract: A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion.Type: ApplicationFiled: November 28, 2008Publication date: September 30, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi Kishi, Minoru Kanda, Masaki Morikawa
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Publication number: 20100229599Abstract: In order to provide method and apparatus for manufacturing a vitreous silica crucible with little mixing of foreign matter and stable arc during arc melting, the method and apparatus for manufacturing a vitreous silica crucible have a device which blows off air from the side of arc electrodes toward a melting space of a mold, and air discharge ports which discharge the air within the heating furnace, and perform forced supply of air into the melting space during melting to make the atmospheric pressure of the melting space higher than the surroundings, and preferably, form an air pressure difference of 100 Pa or more between the melting space and the surroundings, thereby performing melting.Type: ApplicationFiled: July 25, 2008Publication date: September 16, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Takeshi Fujita, Minoru Kanda
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Publication number: 20100162760Abstract: A method for manufacturing a quartz glass crucible has a deposition step of depositing quartz powder on an inner wall surface of a bottomed cylindrical mold, while rotating the mold, and a melting step of obtaining the quartz glass crucible by vitrifying the quartz powder deposited on the inner wall surface of the mold by heating and melting the quartz powder. In the deposition step, under a state where the quantity of electrostatic charge of the quartz powder is controlled to be within a range of 1.0 kV or below in absolute value, the quartz powder is applied to the inner wall surface of the mold, and the thickness of the quartz glass crucible is controlled by maintaining the density of the quartz powder deposition layer on the inner wall surface of the mold within a fixed range.Type: ApplicationFiled: July 25, 2008Publication date: July 1, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Takeshi Fujita, Minoru Kanda
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Publication number: 20100006022Abstract: A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 ?m/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.Type: ApplicationFiled: July 9, 2008Publication date: January 14, 2010Applicants: JAPAN SUPER QUARTZ CORPORATION, SUMCO CORPORATIONInventors: Hiroshi KISHI, Minoru KANDA
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Publication number: 20100005836Abstract: A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles.Type: ApplicationFiled: July 9, 2008Publication date: January 14, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi KISHI, Minoru KANDA
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Publication number: 20100000465Abstract: A method is provided for producing a vitreous silica crucible having excellent shape formability and fewer internal bubbles without excessively heating the curved portion and the bottom part. The method comprises arc melting a quartz powder molded product loaded in a rotating mold while performing vacuum suction, wherein the electrode is moved sideways with respect to the mold center line upon the initiation of arc melting or during the arc melting, and the arc melting is performed at an eccentric position, and preferably the time for total heating is limited to 60% or less of the total arc melting time. A vitreous silica crucible produced by this method is also provided.Type: ApplicationFiled: July 7, 2008Publication date: January 7, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi KISHI, Minoru KANDA
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Publication number: 20090257939Abstract: [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. [Means for Solving the Problems] A purification method of a silica powder comprises: making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of 1000° C. or more.Type: ApplicationFiled: October 25, 2006Publication date: October 15, 2009Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Minoru Kanda, Yoshiyuki Tsuji
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Publication number: 20090165700Abstract: A vitreous silica crucible for pulling single-crystal silicon, comprising a surface glass layer having a thickness of 100 ?m from an inner surface of the crucible, and a glass layer provided below the surface glass layer in a thickness direction of the crucible and extending to a depth of 1 mm from the inner surface of the crucible. The concentration of OH groups in the surface glass layer is 90 ppm or less, and the concentration of OH groups in the glass layer is equal to or more than 90 ppm and equal to or less than 200 ppm. The bubble content in the glass layer is 0.1% or less.Type: ApplicationFiled: November 28, 2008Publication date: July 2, 2009Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi KISHI, Minoru KANDA
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Publication number: 20090165701Abstract: A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement rangeType: ApplicationFiled: November 28, 2008Publication date: July 2, 2009Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi KISHI, Minoru KANDA
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Publication number: 20090145351Abstract: The present invention relates to a vitreous silica crucible for pulling up silicon single crystals by a pulling-up process having a first stage and a second stage after the first stage. The crucible comprises a transparent inner layer containing inner layer bubbles, and an outer layer containing outer layer bubbles. The second stage expansion coefficient X2 of the inner-layer bubbles during the second stage is set to ? or less of the first stage expansion coefficient X1 of the inner-layer bubbles during the first stage.Type: ApplicationFiled: November 28, 2008Publication date: June 11, 2009Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi KISHI, Minoru KANDA
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Publication number: 20090084308Abstract: A vitreous silica member of the present invention is characterized by being formed of vitreous silica exhibiting the easily crystallizable property in the absence of a crystallization accelerator. The vitreous silica having the easily crystallizable property is obtained preferably by heating and melting crystalline quartz at a temperature in the range of 1,710° C. or more to 1,780° C. or less for vitrification, and controlling the fictive temperature of the glass to be in the range of 1,100° C. or more to 1,400° C. or less. The invention also includes a vitreous silica crucible and a method of pulling single-crystal silicon using this vitreous silica crucible.Type: ApplicationFiled: June 20, 2008Publication date: April 2, 2009Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi KISHI, Minoru KANDA
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Publication number: 20080289568Abstract: A crucible has a structure where a layer containing a crystallization accelerating component such as aluminum or the like (a crystallization accelerating layer) is inserted inside a quartz glass layer of a crucible straight body part excepting a crucible bottom part. The crucible does not deform and fall inwardly at the straight body part since a part containing a crystallization accelerating component advances to crystallize so as to increase strength at a high temperature when the crucible is used in pulling up silicon single crystal. Therefore, a single crystallization rate can be increased. Further, since the crystallization accelerating layer is inserted inside the quartz glass layer, the crystallization accelerating component, such as aluminum or barium, does not contact with silicon melt or a carbon susceptor, contamination by eluting these metals does not occurs.Type: ApplicationFiled: May 29, 2008Publication date: November 27, 2008Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Minoru Kanda, Masaru Sato
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Patent number: 6911080Abstract: A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ? seconds.Type: GrantFiled: October 10, 2003Date of Patent: June 28, 2005Assignee: Japan Super Quartz CorporationInventors: Hiroshi Kishi, Minoru Kanda, Masanori Fukui
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Publication number: 20050023266Abstract: A heat treatment apparatus (1) has a treatment chamber 50, arranged adjacent to a heat treatment vessel (2), in which an internal space can be set to contain a prescribed atmosphere, and a conveyor (10) which acts on a holding unit (3), which holds the object of treatment, to cause the object of treatment to move between the heat treatment vessel (2) and the treatment chamber (50).Type: ApplicationFiled: August 24, 2004Publication date: February 3, 2005Inventors: Hiroto Ueno, Kazuo Miwa, Kenji Komuro, Minoru Kanda, Wataru Kanada
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Publication number: 20040118208Abstract: A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ⅙ seconds.Type: ApplicationFiled: October 10, 2003Publication date: June 24, 2004Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Hiroshi Kishi, Minoru Kanda, Masanori Fukui
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Patent number: 6707253Abstract: The present invention provides a matching circuit which has a wide range in which matching can be achieved and the matched state of which is stabilized with respect to a change in the load state. To an input terminal (31) of a matching circuit (30), one terminal of a first variable reactance element (32) is connected. The other terminal of the first variable reactance element (32) is connected to a point between a first fixed reactance element (33a) and a second fixed reactance element (33b), which are connected in series. The first fixed reactance element (33a) is grounded, and the second fixed reactance element (33b) is connected to one terminal of a second variable reactance element (36) and connected to one terminal of a stripline (37). The other terminal of the second variable reactance element (36) is grounded, and the other terminal of the stripline (37) is connected to an output terminal (38).Type: GrantFiled: December 20, 2002Date of Patent: March 16, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kenji Sumida, Tomohiro Okumura, Yukihiro Maegawa, Ichiro Nakayama, Kibatsu Shinohara, Minoru Kanda, Shiniti Matamura
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Publication number: 20030136519Abstract: The present invention provides a matching circuit which has a wide range in which matching can be achieved and the matched state of which is stabilized with respect to a change in the load state. To an input terminal 31 of a matching circuit 30O, one terminal of a first variable reactance element 32 is connected. The other terminal of the first variable reactance element 32 is connected to a point between a first fixed reactance element 33a and a second fixed reactance element 33b, which are connected in series. The first fixed reactance element 33a is grounded, and the second fixed reactance element 33b is connected to one terminal of a second variable reactance element 36 and connected to one terminal of a stripline 37. The other terminal of the second variable reactance element 36 is grounded, and the other terminal of the stripline 37 is connected to an output terminal 38.Type: ApplicationFiled: December 20, 2002Publication date: July 24, 2003Inventors: Kenji Sumida, Tomohiro Okumura, Yukihiro Maegawa, Ichiro Nakayama, Kibatsu Shinohara, Minoru Kanda, Shiniti Matamura
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Patent number: 6293581Abstract: An air bag of an inflatable curtain device includes a first cell group and a second cell group whose internal spaces are independent from each other. A high-pressure gas discharged from opposite ends of a common inflater disposed between both of the first and second cell groups and is supplied to a high-pressure gas supply port in the first cell group and a high-pressure gas supply port in the second cell group. The first and second cell groups can be expanded simultaneously by the common inflater, whereby the entire air bag can be deployed promptly, but also even when one of the first and second cell groups and is damaged, the deployment of the other cell group can be achieved without hindrance.Type: GrantFiled: April 3, 2000Date of Patent: September 25, 2001Assignee: Honda Giken Kogyo Kabushiki KaishaInventors: Naohiko Saita, Takashi Aoki, Fumiharu Ochiai, Minoru Kanda