Abstract: A voltage regulator comprises a differential amplifier for comparing an output of a reference voltage circuit with an output of a voltage dividing circuit and outputting a first signal and a phase compensating circuit having a resistor and a capacitor connected in series. A MOS transistor is connected between a power supply and the phase compensating circuit and has a gate electrode connected to receive the output of the differential amplifier and a grounded source. A constant current circuit is connected between the MOS transistor and ground, and an output transistor having a gate electrode connected to receive a second signal output from a connection point between the MOS transistor and the phase compensating circuit is connected between the power supply and the voltage dividing circuit.

Abstract: Provided is a voltage regulator which has a high speed response property in a low consumption current and is stably operable in a low output capacitance. The voltage regulator has: a differential amplifier for comparing an output of a reference voltage circuit with an output of a voltage dividing circuit and outputting a first signal; a phase compensating circuit in which a resistor and a capacitor are connected in series; a MOS transistor in which an output of the differential amplifier is inputted to a gate electrode, which is connected between a power supply and the phase compensating circuit, and in which a source is grounded; a constant current circuit connected between the MOS transistor and a ground; and an output transistor in which a second signal output from a connection point between the MOS transistor and the phase compensating circuit is inputted to a gate electrode and which is connected between the power supply and the voltage dividing circuit.

Abstract: To prevent the output voltage of a voltage detecting circuit from becoming inconstant when the voltage of a battery is low.

Abstract: A semiconductor device has a semiconductor element formed on a semiconductor substrate and a first insulating film having contact holes. The semiconductor element has a gate electrode, a source region and a drain region. The semiconductor element also has metal wirings each for connecting a respective one of the contact holes to the gate electrode, the source region and the drain region of the semiconductor element. A second insulating film is formed on the first insulating film and the metal wirings. The second insulating film has a chemical-mechanical polished portion defining a flattened upper surface of the second insulating film. Resistors are formed on and are disposed directly in contact with the flattened upper surface of the second insulating film and are connected in series to form a bleeder resistor circuit or a ladder circuit.

Abstract: There is provided a booster type SW regulator in which an inrush current at a time of power application is suppressed. A MOS transistor is inserted between a power supply and a coil of the booster type SW regulator, and an ON resistance of the MOS transistor is made large at a time of power application.

Abstract: To provide a miniaturized and integrated semiconductor device with a resistor structuring a ladder circuit or the like. An insulating film is formed on a semiconductor substrate formed with a semiconductor element, and leveling of the top surface is performed by CMP or the like. Then, a resistor is formed not only on a field region through the leveled insulating film, but also on an active region where the semiconductor element is formed. Further, an insulating film is further formed on the resistor, and electrodes are formed in the resistor through contact holes.