Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Abstract: An object of the present disclosure is to provide a chamber with which inspection conditions of a leak test performed on workpieces of different sizes can easily be managed. The chamber according to an aspect of the present disclosure is a chamber used in a leak tester, and includes: a main chamber for housing a workpiece; a sub-chamber that communicates with the main chamber; and a volume changing mechanism for changing the volume of the sub-chamber, wherein the volume changing mechanism changes the volume of the sub-chamber such that a total volume of a space on the outside of the workpiece in the main chamber and the sub-chamber remains constant with respect to workpieces of different sizes.

Abstract: An object of the present invention is to provide a chamber in which workpieces of different sizes can be positioned. A chamber according to an aspect of the present invention is a chamber for a leak tester, the chamber housing in the interior thereof a workpiece having an opening, the chamber including: a first member having a recess that forms a housing space for the workpiece; a second member adapted to close an open end of the recess; and a positioning mechanism for positioning the workpiece within the housing space such that the opening is in a predetermined position, wherein the positioning mechanism holds the workpiece apart from the first member and the second member.

Abstract: A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.

Abstract: A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

Abstract: Provided is a method for producing an organic tellurium compound that enables the production of an organic tellurium compound in high yield using metallic tellurium as a source material and produces less amount of side products. A method for producing an organic tellurium compound includes the steps of: (A) reacting metallic tellurium with a compound represented by a general formula (1) below; and (B) reacting a compound obtained by the step (A) with an organic halogen compound, the metallic tellurium having a copper content of less than 100 ppm, M(R1)m ??Formula (1) where R1 represents an alkyl group having 1 to 8 carbon atoms, an aryl group or an aromatic heterocyclic group, M represents an alkali metal or an alkaline earth metal, m represents 1 when M is an alkali metal, and m represents 2 when M is an alkaline earth metal.

Abstract: A method for manufacturing a light-emitting element includes preparing a wafer; a laser beam irradiation process; and a separation process. The laser beam irradiation process includes a first irradiation process of forming a plurality of first modified portions, and a second irradiation process of forming a plurality of second modified portions. The second modified portions are formed in the second irradiation process so that a length in a thickness direction of the sapphire substrate of the second modified portions is greater than a length in the thickness direction of the first modified portions.

Abstract: This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

Abstract: Provided is a method for producing an organic tellurium compound that enables the production of an organic tellurium compound in high yield using metallic tellurium as a source material and produces less amount of side products. A method for producing an organic tellurium compound includes the steps of: (A) reacting metallic tellurium with a compound represented by a general formula (1) below; and (B) reacting a compound obtained by the step (A) with an organic halogen compound, the metallic tellurium having a copper content of less than 100 ppm, M(R1)m ??Formula (1) where R1 represents an alkyl group having 1 to 8 carbon atoms, an aryl group or an aromatic heterocyclic group, M represents an alkali metal or an alkaline earth metal, m represents 1 when M is an alkali metal, and m represents 2 when M is an alkaline earth metal.

Abstract: The 6H-thieno[2,3-e][1,2,4]triazolo[3,4-c][1,2,4]triazepine derivatives or salts thereof of the present invention have BRD4 inhibitory activity, and thus, they are useful as medicaments, in particular, as prophylaxis and/or therapeutic agents for diseases associated with BRD4.

Abstract: The 6H-thieno[2,3-e][1,2,4]triazolo[3,4-c][1,2,4]triazepine derivatives or salts thereof of the present invention have BRD4 inhibitory activity, and thus, they are useful as medicaments, in particular, as prophylaxis and/or therapeutic agents for diseases associated with BRD4.

Abstract: A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

Abstract: According to one embodiment, an electronic device includes an interface, a setting unit, and a controller. The interface is operable to perform communication in accordance with a protocol. The setting unit is configured to set one of a plurality of items indicating a state of the electronic device. The controller is configured to, when a command is received via the interface, obtain the state of the item set in the setting unit, and when a response to the command is transmitted, include state information indicating the state of the set item in a header portion of the response defined in a communication standard of the protocol.

Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

Abstract: Provided are a method for producing a multibranched polymer that can produce a multibranched polymer having a narrow molecular weight distribution in a one-pot procedure and the multibranched polymer. A method for producing a multibranched polymer includes the step of polymerizing a first vinyl monomer having a polymerization-initiating group in an ?-position of a vinyl bond and a second vinyl monomer free of polymerization-initiating group in an ?-position of a vinyl bond by a living radical polymerization.