Abstract: A battery pack includes a plurality of battery modules, each battery module including: a cell stack that includes a plurality of battery cells arranged in a first direction; and a side cover disposed on at least one side of the cell stack; and a pack housing structured to accommodate the plurality of battery modules, wherein the side cover includes a body disposed at a side of the cell stack in the first direction; a first extension portion extending from the body in the first direction; and a second extension portion connected to the body and the first extension portion.

Abstract: Provided is a method for manufacturing a polarizing plate, comprising a step of irradiating an optical laminate with ultraviolet rays having an emission wavelength band of 380 nm to 410 nm. The optical laminate sequentially comprises a first base film, a first adhesive layer, a linear polarizer, a second adhesive layer, a second base film and a reverse dispersion liquid crystal layer. The first adhesive layer and the second adhesive layer each comprise a photosensitizer for initiating a curing reaction in a wavelength band of 350 nm to 410 nm, and the ultraviolet rays are irradiated on the first base film side of the optical laminate.

Abstract: A button-type secondary battery includes a lower can having a bottom surface; an upper can having a top, the upper can and the lower can being coupled to define a space therein; an electrolyte in the space; an electrode assembly in the space and including a negative electrode, a separator, and a positive electrode wound together; a gasket between the upper can and the lower can to electrically insulate the upper and lower cans; a top insulator that is electrically insulating and covering a top surface of the electrode assembly; and a bottom insulator that is electrically insulating and covering a bottom surface of the electrode assembly. The top and bottom insulators are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one of the top insulator and the bottom insulator are coated with a protective layer to prevent thermal shrinkage from occurring.

Abstract: According to the present disclosure, after a load operation is performed by satisfying a start condition of the load operation, the load operation is terminated when a compartment temperature of a storage compartment satisfies a termination condition when a door is opened or when a temperature change in the storage compartment satisfies the termination condition. Accordingly, excessive power consumption during the load operation may be prevented, and thus power consumption may be improved.

Abstract: A button type secondary battery includes a wound electrode assembly; a lower can with the electrode assembly and an electrolyte in the lower can; a top plate to close the lower can; a positive electrode terminal coupled to the top plate through a gasket to be electrically insulated from the top plate with a portion of the positive electrode terminal passing through a hole in the top plate to be bonded to a positive electrode tab; a top insulator covering a top surface of the electrode assembly; and a bottom insulator covering a bottom surface of the electrode assembly. The top insulator and the bottom insulator are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one or more of the top insulator and the bottom insulator are coated with a protective layer configured to prevent thermal shrinkage from occurring.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: A method of a first terminal may include: identifying first RB set(s) to be used for SL communication among consecutive RB sets through an LBT procedure; identifying a first subchannel group included in the first RB set(s) and a second subchannel group including a first PRB in the first RB set(s), the first PRB being not included in the first subchannel group; configuring the first PRB within the second subchannel group as an SL communication resource; and transmitting, to a second terminal, control information indicating that the first PRB is configured as the SL communication resource.

Abstract: Disclosed is a case for a battery module including a body having an internal space; and an end plate disposed on an end of the body, wherein the body includes a bottom plate on which a coolant flow path through which a coolant flows is formed, and wherein the end plate includes a coolant flow tube through which the coolant flows and a connection portion extending from the coolant flow tube and coupled to the coolant flow path.

Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: A memory may include multiple rows each coupled to multiple memory cells; a target row classification circuit suitable for classifying, as a target row, a row, among the multiple rows, that is susceptible to data loss as a result of activity of an adjacent row; and a target row signal generation circuit suitable for sequentially activating a target row active signal for activating the target row and a target row precharge signal for precharging the target row in response to a precharge command.

Abstract: The present invention relates to a thiobenzimidazole derivative or a pharmaceutically acceptable salt thereof, and a composition for preventing or treating cancer, comprising the derivative as an active ingredient. The thiobenzimidazole derivative of the present invention exhibits cell toxicity by blocking the cell cycle of a cancer cell and inducing apoptosis when administered to an individual, as the derivative inhibits tubulin polymerization by being activated in the cancer cell, and, thus, the derivative can be used for prevention or treatment of cancer, desirably for prevention or treatment of triple-negative breast cancer.

Abstract: A semiconductor device includes an alignment data generation circuit aligning first and second latch data generated from a first group of input data in synchronization with a first internal strobe signal, outputting the aligned first and second latch data as first alignment data, aligning a first and second latch data generated from a second group of the input data in synchronization with a second internal strobe signal, and outputting the aligned first and second latch data as second alignment data. The semiconductor device includes a write data generation circuit generating first and second write data from the first and second alignment data in synchronization with a latch clock after the start of a first operation mode and generating the first and second write data from the first alignment data in synchronization with the latch clock after the start of a second operation mode.

Abstract: A memory device includes a memory cell array and a peripheral circuit. The memory cell array includes a plurality of memory regions each identified by a row address and a column address. The peripheral circuit accesses the memory cell array by performing, based on an address, a burst length and a burst address gap provided from a memory controller, a burst operation supporting a variable burst address gap. The burst address gap is a numerical difference between adjacent column addresses, on which the burst operation is to be performed.

Abstract: A memory device includes a memory cell array and a peripheral circuit. The memory cell array includes a plurality of memory regions each identified by a row address and a column address. The peripheral circuit accesses the memory cell array by performing, based on an address, a burst length and a burst address gap provided from a memory controller, a burst operation supporting a variable burst address gap. The burst address gap is a numerical difference between adjacent column addresses, on which the burst operation is to be performed.

Abstract: A memory may include multiple rows each coupled to multiple memory cells; a target row classification circuit suitable for classifying, as a target row, a row, among the multiple rows, that is susceptible to data loss as a result of activity of an adjacent row; and a target row signal generation circuit suitable for sequentially activating a target row active signal for activating the target row and a target row precharge signal for precharging the target row in response to a precharge command.

Abstract: Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

Abstract: A memory may include multiple rows each coupled to multiple memory cells; a target row classification circuit suitable for classifying, as a target row, a row, among the multiple rows, that is susceptible to data loss as a result of activity of an adjacent row; and a target row signal generation circuit suitable for sequentially activating a target row active signal for activating the target row and a target row precharge signal for precharging the target row in response to a precharge command.