Patents by Inventor Minxian Max Zhang
Minxian Max Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10147762Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.Type: GrantFiled: June 26, 2014Date of Patent: December 4, 2018Assignee: Hewlett Packard Enterprise Development LPInventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
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Patent number: 10096651Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.Type: GrantFiled: January 29, 2015Date of Patent: October 9, 2018Assignee: Hewlett Packard Enterprise Development LPInventors: Jianhua Yang, Ning Ge, Katy Samuels, Minxian Max Zhang
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Patent number: 9885937Abstract: A dynamic optical crossbar array includes a first set of parallel transparent electrode lines, a bottom set of parallel electrode lines that cross said transparent electrode lines, and an optically variable material disposed between said first set of transparent electrode lines and said bottom set of electrode lines.Type: GrantFiled: January 7, 2011Date of Patent: February 6, 2018Assignee: Hewlett Packard Enerprise Development LPInventors: Jianhua Yang, Alexandre M. Bratkovski, David A. Fattal, Minxian Max Zhang
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Patent number: 9793473Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.Type: GrantFiled: September 5, 2013Date of Patent: October 17, 2017Assignee: Hewlett Packard Enterprise Development LPInventors: Shih-Yuan Wang, Jianhua Yang, Minxian Max Zhang, Alexandre M. Bratkovski, R. Stanley Williams
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Publication number: 20170271589Abstract: A resistive memory array includes a plurality of resistive memory devices. A sneak path current in the resistive memory array is reduced when a negative temperature coefficient of resistance material is incorporated in series with a negative differential resistance selector that is in series with a memristor switching material at a junction formed at a cross-point between two conductors of one of the plurality of resistive memory devices.Type: ApplicationFiled: January 26, 2015Publication date: September 21, 2017Inventors: Minxian Max Zhang, Jianhua Yang, Zhiyong Li, R. Stanley Williams
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Publication number: 20170271409Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.Type: ApplicationFiled: January 29, 2015Publication date: September 21, 2017Inventors: Jianhua Yang, Ning Ge, Katy Samuels, Minxian Max Zhang
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Publication number: 20170271410Abstract: Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.Type: ApplicationFiled: February 11, 2015Publication date: September 21, 2017Inventors: Minxian Max Zhang, Kathryn Samuels, Jianhua Joshua Yang, R. Stanley Williams, Zhiyong Li
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Publication number: 20170141160Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.Type: ApplicationFiled: June 26, 2014Publication date: May 18, 2017Inventors: Minxian Max ZHANG, Jianhua YANG, R. Stanley WILLIAMS
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Patent number: 9558869Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.Type: GrantFiled: September 4, 2015Date of Patent: January 31, 2017Assignee: Hewlett Packard Enterprise Development LPInventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
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Publication number: 20160218285Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.Type: ApplicationFiled: September 5, 2013Publication date: July 28, 2016Inventors: Shih-Yuan Wang, Jianhua Yang, Minxian Max Zhang, Alexandre M. Bratkovski, R. Stanley Williams
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Patent number: 9331278Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.Type: GrantFiled: January 31, 2014Date of Patent: May 3, 2016Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Ning Ge, Zhiyong Li, Minxian Max Zhang
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Publication number: 20160043312Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.Type: ApplicationFiled: March 13, 2013Publication date: February 11, 2016Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
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Patent number: 9257645Abstract: A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.Type: GrantFiled: July 14, 2011Date of Patent: February 9, 2016Assignee: Hewlett Packard Enterprise Development LPInventors: Jianhua Yang, Minxian Max Zhang, Feng Miao
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Publication number: 20160028005Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.Type: ApplicationFiled: September 30, 2015Publication date: January 28, 2016Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
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Publication number: 20150380133Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.Type: ApplicationFiled: September 4, 2015Publication date: December 31, 2015Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
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Patent number: 9224821Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.Type: GrantFiled: April 26, 2012Date of Patent: December 29, 2015Assignee: Hewlett Packard Enterprise Development LPInventors: Minxian Max Zhang, Jianhua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams
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Patent number: 9224949Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.Type: GrantFiled: February 28, 2011Date of Patent: December 29, 2015Assignee: Hewlett Packard Enterprise Development LPInventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
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Patent number: 9178153Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.Type: GrantFiled: July 20, 2011Date of Patent: November 3, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
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Patent number: 9159476Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.Type: GrantFiled: February 1, 2011Date of Patent: October 13, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Minxian Max Zhang, R Stanley Williams
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Patent number: 9082533Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.Type: GrantFiled: October 21, 2011Date of Patent: July 14, 2015Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams