Patents by Inventor Minxian Max Zhang

Minxian Max Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120249252
    Abstract: Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
    Type: Application
    Filed: April 1, 2011
    Publication date: October 4, 2012
    Inventors: Julien Borghetti, Matthew D. Pickett, Gilberto Medelros Ribeiro, Wei Yi, Jianhua Yang, Minxian Max Zhang
  • Publication number: 20120085985
    Abstract: An electrically actuated device includes a reactive metal layer, a first electrode established in contact with the reactive metal layer, an insulating material layer established in contact with the first electrode or the reactive metal layer, an active region established on the insulating material layer, and a second electrode established on the active region. A conductive nano-channel is formed through a thickness of the insulating material layer.
    Type: Application
    Filed: October 6, 2010
    Publication date: April 12, 2012
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro
  • Publication number: 20120026776
    Abstract: Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
    Type: Application
    Filed: July 30, 2010
    Publication date: February 2, 2012
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams