Abstract: A photoresist composition including an organometallic compound, which includes at least one metal-ligand bond, a metal core, and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a sulfonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device that includes forming a photoresist film on a substrate by use of the photoresist composition and forming a modified organometallic compound by binding an organic ligand including a sulfonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including step of removing edge beads using the same and the composition includes an organic solvent and a compound having an AMW of 7 g/mol·ea or more.

Abstract: A semiconductor memory device include first and second active patterns extending in a first direction and spaced apart from each other in a second direction crossing the first direction. The first and second active patterns include a first and second edge portions spaced apart from each other in the first direction, and a center portion therebetween. Bit line node contacts are on the center portions. Bit lines are on the bit line node contacts and extend in a third direction crossing the first and second directions. The center portions of the first and second active patterns are sequentially disposed in the second direction. Each of the bit line node contacts has a first width at a level of a top surface, a second width at a level of a bottom surface, and a third width between the top and bottom surfaces less than the first and second widths.

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the same and the composition includes an organic solvent and a compound having an A log P3 of greater than or equal to 30 ?2.

Abstract: A semiconductor device includes a substrate, a word line extending on the substrate in a first horizontal direction, a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, and a spacer structure on one sidewall of the bit line, wherein the bit line includes a lower conductive layer, an intermediate conductive layer, and an upper conductive layer stacked in a vertical direction on the substrate, and the spacer structure includes a depletion stopping layer on one sidewall of the lower conductive layer, extending in the vertical direction and including a material layer having an interfacial trap density less than an interfacial trap density of a silicon nitride layer, and an inner spacer extending in the vertical direction and on one sidewall of the depletion stopping layer.

Abstract: Provided is a method of forming patterns that includes coating a metal-containing resist composition on a substrate; coating a composition for removing edge beads along the edge of the substrate; drying and heating the coated resultant to form a metal-containing resist film on the substrate; and exposing and developing the dried and heated resultant to form a resist pattern, wherein the composition for removing edge beads may include at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound and a hydroxamic acid-based compound, and an organic solvent.

Abstract: Transistors structures comprising a semiconductor features and dielectric material comprising silicon and oxygen in gaps or spaces between the features. The dielectric material may fill the gaps from bottom-up with an atomic layer deposition (ALD) process that includes a silicon deposition phase, and an oxidation phase augmented by N2:NH3 plasma activated nitrogen species. Being plasma activated, the nitrogen species have short mean free paths, and therefore preferentially passivate surfaces with low aspect ratios. This aspect-ratio dependent passivation may increase an energy barrier to surface reactions with a silicon precursor, resulting in a concomitant differential in deposition rate. With N2:NH3 plasma passivation, deposited dielectric material may have a nitrogen concentration that varies by at least order of magnitude as a function of the aspect ratio of the filled gaps.

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including step of removing edge beads using the same and the composition includes an organic solvent and a cyclic compound substituted with at least one hydroxy group (—OH), wherein the cyclic compound has a carbon number of 5 to 30, and the cyclic compound has at least one double bond in the ring.

Abstract: An electronic device including: a housing configured to be worn on a user's body and including a rear surface and a front surface, with the rear surface configured to contact the user's body; at least one sensor module provided in the housing and configured to receive light incident into the housing through the rear surface; and an electrophoretic element provided at least partially between the rear surface and the at least one sensor module, where the electrophoretic element is configured to receive an electrical signal and transmit or block at least a portion of the light incident into the housing.

Abstract: Provided is a method of producing a composite solid electrolyte. The method includes step S10 of producing an oxide-based solid electrolyte membrane by electrospinning a mixture including an oxide-based solid electrolyte precursor and a polymer, step S20 of producing an oxide-based solid electrolyte support by removing the polymer inside the oxide-based solid electrolyte membrane, and step S30 of causing the oxide-based solid electrolyte support to be impregnated with a sulfide-based solid electrolyte using a sulfide-based solid electrolyte precursor solution including a sulfide-based solid electrolyte precursor and a solvent.

Abstract: The present disclosure provides methods and apparatuses for biomaterial detection sensors. In some embodiments, a biomaterial detection sensor includes a membrane including a plurality of wells. Each of the plurality of wells is configured to encapsulate a biomaterial contained in a sample solution. A surface of the membrane is selectively modified into at least one of a hydrophilic surface and a hydrophobic surface. In some embodiments, a method of manufacturing a biomaterial detection sensor includes depositing a first membrane and a second membrane on respective surfaces of a wafer, forming a window by etching the first membrane and the first surface of the wafer, forming a plurality of wells on the second membrane, modifying a surface of the second membrane into at least one of a hydrophilic surface and a hydrophobic surface; and transferring a two-dimensional graphene oxide material onto a bottom of each of the plurality of wells.

Abstract: A method performed by a near-real time (RT) radio access network intelligent controller (RIC), may comprise: receiving, from an E2 node, an indication message including information on a slice associated with a cell; identifying a size of a resource allocated for the slice based on the information on the slice; and transmitting, to the E2 node, a control message including information on the size of the resource, wherein the information on the slice may comprise collection duration, a sum of data volume during the collection duration, and information on a terminal associated with the slice.

Abstract: A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1 and a solvent. A method for forming patterns uses the semiconductor photoresist composition.

Abstract: A semiconductor photoresist composition including an organometallic compound, an additive represented by Chemical Formula 1, and a solvent, and a method of forming uses the semiconductor photoresist composition. Details of Chemical Formula 1 are as defined in the specification.

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.

Abstract: A semiconductor device may include a bit line structure, a first spacer, and a second spacer on a substrate. The bit line structure may include a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate. The first spacer and the second spacer may be stacked in a horizontal direction on a sidewall of the bit line structure. The horizontal direction may be substantially parallel to the upper surface of the substrate. The conductive structure may include a nitrogen-containing conductive portion at a lateral portion thereof. The first spacer may contact the nitrogen-containing conductive portion.

Abstract: A semiconductor photoresist composition includes a first organometallic compound, a second organometallic compound, and a solvent. A method of forming patterns utilizing the same is provided.

Abstract: The present invention relates to a novel compound having inhibitory activity against O-GlcNAcase and a use thereof.