Abstract: Provided are a resist composition and a pattern formation method using the same. The resist composition may include an organometallic compound represented by one of Formulae 1-1 to 1-4, and an additive represented by Formula 2: wherein M11, L11 to L14, a11 to a14, R11 to R14, b11 to b14, Y11 to Y13, X11 to X13, Y21, Y22, L21, and a21 in Formulae 1-1 to 1-4 and 2 are described in the specification.

Abstract: According to certain embodiments, an electronic device comprises: a display configured to perform a scanning operation in a scanning operation frequency range; a battery; a wireless charging antenna configured to induce a current when proximate to wireless charging signal in a frequency range adjacent to the scanning operation frequency range, and wherein the induced current charges the battery; a first flexible printed circuit board disposed between the wireless charging antenna and the battery and connected to the display; a second flexible printed circuit board disposed in parallel with the first flexible printed circuit board; and at least one shielding sheet disposed between the wireless charging antenna and the first printed circuit board.

Abstract: Aspects of a storage device are provided for handling detection and operations associated with an erase block type of the block. The storage device includes one or more non-volatile memories each including a block, and one or more controllers operable to cause the storage device to perform erase type detection and associated operations for single blocks or metablocks. For instance, the controller(s) may erase the block prior to a power loss event, perform at least one read of the block following the power loss event, identify the erase block type of the block in response to the at least one read, and program the block based on the identified erase block type without performing a subsequent erase prior to the program. The controller(s) may also perform metablock operations associated with the identified erase block type. Thus, unnecessary erase operations during recovery from an ungraceful shutdown (UGSD) may be mitigated.

Abstract: A TV according to an embodiment of the present disclosure comprises: a screen which displays a content; a cover at least a part of which overlaps the screen and to which one or more illuminators are attached; a sensor which senses an object located behind the screen; and a controller which controls the one or more illuminators according to the sensing result of the sensor.

Abstract: The present invention relates to a silver nanocluster catalyst for electrochemically treated carbon dioxide conversion, water reduction reactions, or syngas synthesis involving a mixture of hydrogen and carbon monoxide; a gas diffusion electrode comprising the same; a zero-gap reactor comprising the same; and a method for converting carbon dioxide using the same, which exhibits excellent conversion efficiency and high selectivity.

Abstract: Disclosed herein is a sensor assembly capable of detecting moisture introduced into a rack housing. The sensor assembly includes a housing, an angle sensor provided in the housing, and a moisture sensor provided in the housing. The moisture sensor includes a ground electrode, a first input electrode, a second input electrode, and a control unit electrically connected to the ground electrode, the first input electrode, and the second input electrode to detect moisture. The ground electrode, the first input electrode, and the second input electrode extend downward from the housing. A lower end of the ground electrode, a lower end of the first input electrode, and a lower end of the second input electrode are exposed to the outside of the housing. Further, the first input electrode extends downward to a different level compared to the second input electrode.

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound; a vinyl group-containing acid compound; and a solvent, and a method of forming a pattern using the same.

Abstract: Provided are an organometallic compound represented by one of Formulae 1-1 to 1-4, a resist composition including the same, and a pattern formation method using the resist composition: M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X14 in Formulae 1-1 to 1-4 are as described in the specification.

Abstract: The present invention relates to an extracorporeal shock wave device for loading a target substance into a delivery vehicle. According to the present invention, the time taken to load the target substance into the delivery vehicle can be significantly reduced, and the loading rate can also be greatly improved.

Abstract: Provided is a genome editing composition for prime editing including a prime editor protein and a prime editing guide RNA, for editing a Z-type mutation of alpha-1 antitrypsin deficiency. The composition according to an aspect includes both a pegRNA sequence capable of effectively editing the SERPINA1 gene and prime editor 2 (PE 2), and thus, may effectively deliver the prime editor to a cell, and act specifically for a target sequence of the SERPINA1 gene, enabling genome editing with high accuracy, and therefore, may be useful as a SERPINA1 gene editing platform. In addition, the composition is capable of correcting the Z-type mutation of the SERPINA1 gene, and may be used for treatment or prevention of alpha-1 antitrypsin deficiency.

Abstract: A semiconductor device may include first and second bit lines that each include a line portion, a connection portion extending from the line portion into a first extension region, and a pad portion extending from the connection portion in the first extension region; and a third bit line between the line portions of the first and second bit lines in a memory cell array region and the first extension region. A first end portion of the third bit line may be in the first extension region. The pad portions of the first and second bit lines each may be wider than the line portions of the first and second bit lines. A minimum distance between the pad portions of the first and second bit lines may be less than a minimum distance between the line portion of the first bit line and the third bit line.

Abstract: With respect to an electronic device and an operating method for the electronic device, according to various embodiments, the electronic device comprises: a rotatable vision sensor configured to detect an external object in a space in which the electronic device is arranged; a rotatable projector configured to output a picture in the space in which the electronic device is arranged; a memory storing spatial information about the space in which the electronic device is arranged; and a processor, wherein the processor can be configured to: control the vision sensor so that the vision sensor tracks the external object while rotating, determine the position of the picture to be output by the projector based on the spatial information and external object information generated based on the tracking of the external object, and control the projector to output the picture at the determined position.

Abstract: A TV according to an embodiment of the present disclosure comprises: a screen which displays a content; a cover at least a part of which overlaps the screen and to which one or more illuminators are attached; a sensor which senses an object located behind the screen; and a controller which controls the one or more illuminators according to the sensing result of the sensor.

Abstract: Disclosed is a method of forming patterns including coating a metal-containing resist composition on a substrate; a heat treatment including drying and heating to form a metal-containing resist layer on the substrate; exposing a metal-containing resist layer using a patterned mask; and developing including coating a developer composition to remove unexposed regions to form a resist pattern, wherein the coating the metal-containing resist composition is performed by coating the metal-containing resist composition with a spin coater at a speed of about 100 to about 1,500 rpm for about 60 to about 120 seconds, the heating is performed at a temperature of about 90 to about 200° C. for about 30 to about 120 seconds, the exposing the metal-containing resist layer is performed by irradiating extreme ultraviolet light, light having a wavelength of about 5 nm to about 50 nm, or a combination thereof.

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent. A method of forming (or providing) patterns utilizing the same is provided.

Abstract: A semiconductor device may include a device isolation layer on a side of the active region, a gate trench intersecting the active region, a gate structure in the gate trench, a bit line electrically connected to a first region of the active region, and a pad pattern electrically connected to a second region of the active region. An upper surface of the second region may be higher than an upper surface of the first region and lower than an upper surface of the bit line. A width of the bit line may be greater in an upper region than a lower region thereof. The pad pattern may contact upper and side surfaces of the second region. An upper surface of the pad pattern may be higher than an upper surface of the bit line. The gate trench may be between the first and second regions of the active region.

Abstract: A photoresist composition including an organometallic compound, which includes at least one metal-ligand bond, a metal core, and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a sulfonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device that includes forming a photoresist film on a substrate by use of the photoresist composition and forming a modified organometallic compound by binding an organic ligand including a sulfonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including step of removing edge beads using the same and the composition includes an organic solvent and a compound having an AMW of 7 g/mol·ea or more.

Abstract: A semiconductor memory device include first and second active patterns extending in a first direction and spaced apart from each other in a second direction crossing the first direction. The first and second active patterns include a first and second edge portions spaced apart from each other in the first direction, and a center portion therebetween. Bit line node contacts are on the center portions. Bit lines are on the bit line node contacts and extend in a third direction crossing the first and second directions. The center portions of the first and second active patterns are sequentially disposed in the second direction. Each of the bit line node contacts has a first width at a level of a top surface, a second width at a level of a bottom surface, and a third width between the top and bottom surfaces less than the first and second widths.

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the same and the composition includes an organic solvent and a compound having an A log P3 of greater than or equal to 30 ?2.