Abstract: A semiconductor photoresist composition includes an organometallic compound; a linear carboxylic acid compound including at least one carboxyl group; a cyclic carboxylic acid compound represented by Chemical Formula 1; and a solvent. The details of Chemical Formula 1 are as described in the specification. A method of forming patterns utilizes the semiconductor photoresist composition.

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming or providing patterns using the same, the semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1; and a solvent. The descriptions of Chemical Formula 1 are as described in the specification.

Abstract: The present disclosure provides methods and apparatuses for biomaterial detection sensors. In some embodiments, a biomaterial detection sensor includes a membrane including a plurality of wells. Each of the plurality of wells is configured to encapsulate a biomaterial contained in a sample solution. A surface of the membrane is selectively modified into at least one of a hydrophilic surface and a hydrophobic surface. In some embodiments, a method of manufacturing a biomaterial detection sensor includes depositing a first membrane and a second membrane on respective surfaces of a wafer, forming a window by etching the first membrane and the first surface of the wafer, forming a plurality of wells on the second membrane, modifying a surface of the second membrane into at least one of a hydrophilic surface and a hydrophobic surface; and transferring a two-dimensional graphene oxide material onto a bottom of each of the plurality of wells.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an organometallic compound, a compound including at least one nitro group and at least one hydroxyl group, and a solvent.

Abstract: A semiconductor package includes a redistribution structure including a redistribution layer, chip structures each having a first surface facing the redistribution structure, an interconnection structure between the chip structures and including a connection layer, at least one post configured to electrically connect the connection layer and the redistribution layer, and at least one connecting bump below the redistribution structure. Each chip structure includes semiconductor chips including a front end and a back end opposite to each other in a first direction, side ends opposite to each other in a second direction, and at least one connection pad configured to electrically connect to the connection layer and the redistribution layer, a gap-fill layer covering the semiconductor chips and defining the first surface of the chip structure, and at least one pillar in the gap-fill layer, extending from the at least one connection pad to the first surface.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming or providing patterns using the same, the semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1; and a solvent. The descriptions of Chemical Formula 1 are as described in the specification.

Abstract: A semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition are provided. The semiconductor photoresist composition includes an organometallic compound; a diketone compound; an alcohol including two or more hydroxyl groups; and a solvent.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an organometallic compound; a cyclic diketone compound; and a solvent.

Abstract: A semiconductor photoresist composition includes an organometallic compound; an organic solvent including a ketone-based solvent; and an organic acid compound. A method of forming patterns using the same is disclosed.

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include an organometallic compound; a compound represented by Chemical Formula 1; and a solvent. The description of Chemical Formula 1 is as provided in more detail in the present disclosure.

Abstract: A semiconductor photoresist composition and a method of forming or providing patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a tin (Sn)-containing organometallic compound; at least one selected from a sulfonic acid compound including one or more halogen elements and a sulfonamide-based compound including one or more halogen elements; and a solvent.

Abstract: A semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a tin (Sn)-containing organometallic compound, deuterium oxide (D2O), and a solvent.

Abstract: A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition may include an organic tin (Sn) compound that may include a hydrolyzable ligand substituted with at least one deuterium and a solvent.

Abstract: A manipulator and a method for controlling the manipulator are disclosed.

Abstract: A pretreatment system and method is used for testing a metal component. The pretreatment system includes a robot, a plurality of arms having relative rotation with respect to each other, and a foremost arm movable within an operating radius. A gripper device mounted at the foremost arm includes a first gripper unit and a second gripper unit. A sample input device includes a sample input unit lifting device that includes a dosing head mounted thereon movable. A tube holder cup is disposed below the sample input lifting device and configured to input the sample into the tube. An acid injection device is configured to inject acid into the tube or inject distilled water into the tube containing the acid in which the sample is dissolved. A vision device acquires an image of a set portion of a tube containing a sample solution in which the sample is dissolved in acid.

Abstract: A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are provided. The semiconductor photoresist composition includes a Sn-containing organometallic compound, a carboxylic acid compound substituted with an O-containing heterocycle, and a solvent.

Abstract: A semiconductor photoresist composition and a method of forming patterns using the composition are disclosed. The semiconductor photoresist composition may include a tin (Sn)-containing organometallic compound, a compound represented by Chemical Formula 1, and a solvent.

Abstract: In a contactless location information acquisition apparatus and a location information acquisition method using the acquisition apparatus, the acquisition apparatus includes an imaging part, a modulation part and a controller. The imaging part is spaced apart from a moving object, and is configured to take picture of the object in a predetermined exposure time. The modulation part is configured to generate a motion blur to the pictured image, and is configured to move the imaging part to a predetermined first pattern, so as for the motion blurred image to have a second pattern. The controller is configured to obtain a location of the object from the motion blurred image for the exposure time.

Abstract: Disclosed is a method of forming patterns and a photoresist film, the method of forming patterns including coating a semiconductor photoresist composition including an organic tin compound on a substrate; drying and heating to form a photoresist film; and exposing and developing the photoresist film, wherein the organic tin compound has at least one organic ligand including a Sn-C bond and at least one organic carbonyloxy group, and the photoresist film includes a compound represented by (R1Sn)xOy(OAR2)z before or after exposure, and the photoresist film including a compound represented by (R1Sn)xOy(OAR2)z.