Abstract: A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity adjacent to the main surface. A portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure. The method comprises arranging an emitting element at the support structure, the emitting element being configured to emit a thermal radiation of the emitter, wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate.

Abstract: An apparatus and a method for producing the apparatus are described, wherein the apparatus includes a substrate with a photodetector and a dielectric arranged on the substrate. Further, the apparatus includes a microlens arranged on a first side of the dielectric. The microlens is configured to steer incident radiation onto the photodetector. Moreover, the apparatus includes a carrier-free optical interference filter. The microlens is arranged between the photodetector and the interference filter, and the interference filter has a plane surface on a side facing away from the photodetector.

Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.

Abstract: A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.

Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

Abstract: A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity adjacent to the main surface. A portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure. The method comprises arranging an emitting element at the support structure, the emitting element being configured to emit a thermal radiation of the emitter, wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate.

Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.

Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

Abstract: A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity adjacent to the main surface. A portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure. The method comprises arranging an emitting element at the support structure, the emitting element being configured to emit a thermal radiation of the emitter, wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate.

Abstract: A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.

Abstract: A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.

Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual cylindrical points or feet-like elements with straight or concave sidewalls, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

Abstract: Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.

Abstract: A method of forming a resonator by providing a first layer; forming a sacrificial layer on the first layer; forming a capping layer on the sacrificial layer; forming at least one etching aperture in the capping layer; forming at least one additional aperture having a different size than the at least one etching aperture; forming a cavity and releasing a resonator structure within the cavity by removing the sacrificial layer by etching via the at least one etching aperture; sealing the at least one etching aperture; and forming a lining in the at least one additional aperture.

Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

Abstract: The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.