Patents by Inventor Mirng-ji Lii

Mirng-ji Lii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210057293
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a testing region and multiple first conductive lines over the testing region. The first conductive lines are electrically connected in series. The semiconductor device structure also includes multiple second conductive lines over the testing region. The second conductive lines are electrically connected in series, and the second conductive lines are physically separated from the first conductive lines. The semiconductor device structure further includes multiple magnetic structures wrapping around portions of the first conductive lines and wrapping around portions of the second conductive lines. The magnetic structures are arranged in a column.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 25, 2021
    Inventors: Mill-Jer WANG, Tang-Jung CHIU, Chi-Chang LAI, Chia-Heng TSAI, Mirng-Ji LII, Weii LIAO
  • Publication number: 20210050332
    Abstract: A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.
    Type: Application
    Filed: November 2, 2020
    Publication date: February 18, 2021
    Inventors: Chien-Hsun Lee, Tsung-Ding Wang, Mirng-Ji Lii, Chen-Hua Yu
  • Patent number: 10910466
    Abstract: A method of forming an integrated circuit structure includes forming a first magnetic layer, forming a first conductive line over the first magnetic layer, and coating a photo-sensitive coating on the first magnetic layer. The photo-sensitive coating includes a first portion directly over the first conductive line, and a second portion offset from the first conductive line. The first portion is joined to the second portion. The method further includes performing a first light-exposure on the first portion of the photo-sensitive coating, performing a second light-exposure on both the first portion and the second portion of the photo-sensitive coating, developing the photo-sensitive coating, and forming a second magnetic layer over the photo-sensitive coating.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: February 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun Kai Tzeng, Cheng Jen Lin, Yung-Ching Chao, Ming-Da Cheng, Mirng-Ji Lii
  • Publication number: 20210028266
    Abstract: A display device includes a semiconductor substrate, an isolation layer, a light-emitting layer and a second electrode. The semiconductor substrate has a pixel region and a peripheral region located around the pixel region. The semiconductor substrate includes first electrodes and a driving element layer. The first electrodes are disposed in the pixel region and the first electrodes are electrically connected to the driving element layer. The isolation layer is disposed on the semiconductor substrate. The isolation layer includes a first isolation pattern disposed in the peripheral region, and the first isolation pattern has a first side surface and a second side surface opposite to the first side surface. The light-emitting layer is disposed on the isolation layer and the first electrodes, and covers the first side surface and the second side surface of the first isolation pattern. The second electrode is disposed on the light-emitting layer.
    Type: Application
    Filed: May 4, 2020
    Publication date: January 28, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Yu Wu, Mirng-Ji Lii, Shang-Yun Tu, Ching-Hui Chen
  • Patent number: 10867949
    Abstract: A device includes a first die, a second die, one or more redistribution layers (RDLs) electrically connected to the first die, a plurality of connectors on a surface of the one or more RDLs and a package substrate electrically connected to the first die and the second die. The package substrate is electrically connected to the first die through the one or more RDLs and the plurality of connectors. The package substrate comprises a cavity, and the second die is at least partially disposed in the cavity.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung Wei Cheng, Tsung-Ding Wang, Mirng-Ji Lii, Chien-Hsun Lee, Chen-Hua Yu
  • Patent number: 10861811
    Abstract: Connector structures and methods of forming the same are provided. A method includes forming a first patterned passivation layer on a workpiece, the first patterned passivation layer having a first opening exposing a conductive feature of the workpiece. A seed layer is formed over the first patterned passivation layer and in the first opening. A patterned mask layer is formed over the seed layer, the patterned mask layer having a second opening exposing the seed layer, the second opening overlapping with the first opening. A connector is formed in the second opening. The patterned mask layer is partially removed, an unremoved portion of the patterned mask layer remaining in the first opening. The seed layer is patterned using the unremoved portion of the patterned mask layer as a mask.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Chen-Shien Chen, Sheng-Yu Wu, Mirng-Ji Lii, Chita Chuang
  • Publication number: 20200357760
    Abstract: A semiconductor package includes a semiconductor substrate, an interconnect structure disposed over the substrate, a first passivation layer disposed over an interconnect structure, a contact pad disposed over the first passivation layer, a dummy disposed around the contact pad and over the first passivation layer, and a second passivation layer overlaying the dummy and the contact pad.
    Type: Application
    Filed: May 6, 2020
    Publication date: November 12, 2020
    Inventors: Yao-Chun CHUANG, Hong-Seng SHUE, Chen-Nan CHIU, Li-Huan CHU, Mirng-Ji LII
  • Patent number: 10825798
    Abstract: A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: November 3, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Hsun Lee, Tsung-Ding Wang, Mirng-Ji Lii, Chen-Hua Yu
  • Publication number: 20200328169
    Abstract: A method embodiment includes forming a sacrificial film layer over a top surface of a die, the die having a contact pad at the top surface. The die is attached to a carrier, and a molding compound is formed over the die and the sacrificial film layer. The molding compound extends along sidewalls of the die. The sacrificial film layer is exposed. The contact pad is exposed by removing at least a portion of the sacrificial film layer. A first polymer layer is formed over the die, and a redistribution layer (RDL) is formed over the die and electrically connects to the contact pad.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Inventors: Chen-Hua Yu, Yen-Chang Hu, Ching-Wen Hsiao, Mirng-Ji Lii, Chung-Shi Liu, Chien Ling Hwang, Chih-Wei Lin, Chen-Shien Chen
  • Publication number: 20200328153
    Abstract: A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Inventors: Mirng-Ji Lii, Chung-Shi Liu, Chin-Yu Ku, Hung-Jui Kuo, Alexander Kalnitsky, Ming-Che Ho, Yi-Wen Wu, Ching-Hui Chen, Kuo-Chio Liu
  • Publication number: 20200266074
    Abstract: A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Inventors: Wei Sen Chang, Yu-Feng Chen, Chen-Shien Chen, Mirng-Ji Lii
  • Patent number: 10714359
    Abstract: A device includes a first die, a second die, one or more redistribution layers (RDLs) electrically connected to the first die, a plurality of connectors on a surface of the one or more RDLs and a package substrate electrically connected to the first die and the second die. The package substrate is electrically connected to the first die through the one or more RDLs and the plurality of connectors. The package substrate comprises a cavity, and the second die is at least partially disposed in the cavity.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung Wei Cheng, Tsung-Ding Wang, Mirng-Ji Lii, Chien-Hsun Lee, Chen-Hua Yu
  • Patent number: 10700025
    Abstract: A method embodiment includes forming a sacrificial film layer over a top surface of a die, the die having a contact pad at the top surface. The die is attached to a carrier, and a molding compound is formed over the die and the sacrificial film layer. The molding compound extends along sidewalls of the die. The sacrificial film layer is exposed. The contact pad is exposed by removing at least a portion of the sacrificial film layer. A first polymer layer is formed over the die, and a redistribution layer (RDL) is formed over the die and electrically connects to the contact pad.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Yen-Chang Hu, Ching-Wen Hsiao, Mirng-Ji Lii, Chung-Shi Liu, Chien Ling Hwang, Chih-Wei Lin, Chen-Shien Chen
  • Patent number: 10700001
    Abstract: A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mirng-Ji Lii, Chung-Shi Liu, Chin-Yu Ku, Hung-Jui Kuo, Alexander Kalnitsky, Ming-Che Ho, Yi-Wen Wu, Ching-Hui Chen, Kuo-Chio Liu
  • Publication number: 20200176254
    Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.
    Type: Application
    Filed: November 25, 2019
    Publication date: June 4, 2020
    Inventors: Chang-Jung Hsueh, Chen-En Yen, Kang Chin Wei, Kai Jun Zhan, Wei-Hung Lin, Cheng Jen Lin, Ming-Da Cheng, Ching-Hui Chen, Mirng-Ji Lii
  • Publication number: 20200152587
    Abstract: Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.
    Type: Application
    Filed: January 3, 2020
    Publication date: May 14, 2020
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Ming-Da Cheng, Mirng-Ji Lii, Meng-Tse Chen, Wei-Hung Lin
  • Patent number: 10643861
    Abstract: A method is provided. The method includes attaching a bridge layer to a first substrate. The method also includes forming a first connector, the first connector electrically connecting the bridge layer to the first substrate. The method also includes coupling a first die to the bridge layer and the first substrate, and coupling a second die to the bridge layer.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: May 5, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei Sen Chang, Yu-Feng Chen, Chen-Shien Chen, Mirng-Ji Lii
  • Publication number: 20200135664
    Abstract: A semiconductor package includes a first die having a first substrate, an interconnect structure overlying the first substrate and having multiple metal layers with vias connecting the multiple metal layers, a seal ring structure overlying the first substrate and along a periphery of the first substrate, the seal ring structure having multiple metal layers with vias connecting the multiple metal layers, the seal ring structure having a topmost metal layer, the topmost metal layer being the metal layer of the seal ring structure that is furthest from the first substrate, the topmost metal layer of the seal ring structure having an inner metal structure and an outer metal structure, and a polymer layer over the seal ring structure, the polymer layer having an outermost edge that is over and aligned with a top surface of the outer metal structure of the seal ring structure.
    Type: Application
    Filed: October 10, 2019
    Publication date: April 30, 2020
    Inventors: Chih-Hsiang Tseng, Yu-Feng Chen, Cheng Jen Lin, Wen-Hsiung Lu, Ming-Da Cheng, Kuo-Ching Hsu, Hong-Seng Shue, Ming-Hong Cha, Chao-Yi Wang, Mirng-Ji Lii
  • Publication number: 20200135659
    Abstract: A semiconductor device includes a semiconductor substrate, a passivation layer overlying the semiconductor substrate, and an interconnect structure overlying the passivation layer. The interconnect structure includes a landing pad region and a dummy region electrically separated from each other. A protective layer is formed on the interconnect structure and has a first opening exposing a portion of the landing pad region and a second opening exposing a portion of the dummy region. A metal layer is formed on the exposed portion of landing pad region and the exposed portion of the dummy region. A bump is formed on the metal layer overlying the landing pad region.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 30, 2020
    Inventors: Hsien-Wei CHEN, Hao-Yi TSAI, Mirng-Ji LII, Chen-Hua YU
  • Publication number: 20200127078
    Abstract: A method of forming an integrated circuit structure includes forming a first magnetic layer, forming a first conductive line over the first magnetic layer, and coating a photo-sensitive coating on the first magnetic layer. The photo-sensitive coating includes a first portion directly over the first conductive line, and a second portion offset from the first conductive line. The first portion is joined to the second portion. The method further includes performing a first light-exposure on the first portion of the photo-sensitive coating, performing a second light-exposure on both the first portion and the second portion of the photo-sensitive coating, developing the photo-sensitive coating, and forming a second magnetic layer over the photo-sensitive coating.
    Type: Application
    Filed: March 1, 2019
    Publication date: April 23, 2020
    Inventors: Chun Kai Tzeng, Lin Cheng Jen, Yung-Ching Chao, Ming-Da Cheng, Mirng-Ji Lii