Patents by Inventor Mirng-ji Lii
Mirng-ji Lii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145379Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.Type: ApplicationFiled: February 23, 2023Publication date: May 2, 2024Inventors: Yen-Kun Lai, Wei-Hsiang Tu, Ching-Ho Cheng, Cheng-Nan Lin, Chiang-Jui Chu, Chien Hao Hsu, Kuo-Chin Chang, Mirng-Ji Lii
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Patent number: 11967579Abstract: A method for forming a package structure is provided. The method includes etching a top surface of a substrate to form a cavity. The substrate includes thermal vias directly under a bottom surface of the cavity. The method also includes forming at least one first electronic device in the cavity of the substrate. The first electronic device is thermally coupled to the thermal vias. The method further includes forming an encapsulating material in the cavity, so that the encapsulating material extends along sidewalls of the first electronic device and covers a surface of the first electronic device opposite the bottom surface of the cavity. In Addition, the method includes forming an insulating layer having an RDL structure over the encapsulating material. The RDL structure is electrically connected to the first electronic device.Type: GrantFiled: September 30, 2022Date of Patent: April 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Po-Hao Tsai, Ming-Da Cheng, Mirng-Ji Lii
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Publication number: 20240128231Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.Type: ApplicationFiled: January 4, 2023Publication date: April 18, 2024Inventors: Fu Wei Liu, Pei-Wei Lee, Yun-Chung Wu, Bo-Yu Chiu, Szu-Hsien Lee, Mirng-Ji Lii
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Publication number: 20240125713Abstract: A method includes directing light at a first side of a semiconductor structure; detecting a first light intensity at a second side of the semiconductor structure, wherein the first light intensity corresponds to the light that penetrated the semiconductor structure from the first side to the second side; and comparing the first light intensity to a second light intensity, wherein the second light intensity corresponds to an expected intensity of light.Type: ApplicationFiled: January 10, 2023Publication date: April 18, 2024Inventors: Hao Chun Yang, Ming-Da Cheng, Pei-Wei Lee, Mirng-Ji Lii
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Patent number: 11961944Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.Type: GrantFiled: January 31, 2023Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En Yen, Ming-Da Cheng, Mirng-Ji Lii, Wen-Hsiung Lu, Cheng-Jen Lin, Chin-Wei Kang, Chang-Jung Hsueh
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Publication number: 20240120277Abstract: A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.Type: ApplicationFiled: December 18, 2023Publication date: April 11, 2024Inventors: Hong-Seng SHUE, Sheng-Han TSAI, Kuo-Chin CHANG, Mirng-Ji LII, Kuo-Ching HSU
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Patent number: 11942445Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.Type: GrantFiled: August 23, 2021Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-En Yen, Chin-Wei Kang, Kai-Jun Zhan, Wen-Hsiung Lu, Cheng-Jen Lin, Ming-Da Cheng, Mirng-Ji Lii
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Publication number: 20240096647Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Publication number: 20240088119Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Hung Lin, Hui-Min Huang, Chang-Jung Hsueh, Wan-Yu Chiang, Ming-Da Cheng, Mirng-Ji Lii
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Patent number: 11908818Abstract: A semiconductor device includes a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductive bump, a conductive cap over the conductive bump, and a passivation layer. The conductive pad is over the semiconductor substrate. The conductive bump is over the conductive pad, wherein the conductive bump has a stepped sidewall structure including a lower sidewall, an upper sidewall laterally offset from the lower sidewall, and an intermediary surface laterally extending from a bottom edge of the upper sidewall to a top edge of the lower sidewall. The conductive cap is over the conductive bump. The passivation layer is over the semiconductor substrate and laterally surrounds the conductive bump, wherein the passivation layer has a top surface higher than the intermediary surface of the stepped sidewall structure of the conductive bump and lower than a top surface of conductive cap.Type: GrantFiled: November 12, 2021Date of Patent: February 20, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Yu Wu, Ching-Hui Chen, Mirng-Ji Lii, Kai-Di Wu, Chien-Hung Kuo, Chao-Yi Wang, Hon-Lin Huang, Zi-Zhong Wang, Chun-Mao Chiu
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Patent number: 11901266Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.Type: GrantFiled: August 30, 2021Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Li Yang, Wen-Hsiung Lu, Lung-Kai Mao, Fu-Wei Liu, Mirng-Ji Lii
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Patent number: 11894241Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: GrantFiled: April 1, 2021Date of Patent: February 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Publication number: 20240038752Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.Type: ApplicationFiled: October 5, 2023Publication date: February 1, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Hung Lin, Hui-Min Huang, Chang-Jung Hsueh, Wan-Yu Chiang, Ming-Da Cheng, Mirng-Ji Lii
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Patent number: 11855058Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.Type: GrantFiled: August 30, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Hung Lin, Hui-Min Huang, Chang-Jung Hsueh, Wan-Yu Chiang, Ming-Da Cheng, Mirng-Ji Lii
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Patent number: 11854835Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.Type: GrantFiled: August 10, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mirng-Ji Lii, Chen-Shien Chen, Lung-Kai Mao, Ming-Da Cheng, Wen-Hsiung Lu
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Patent number: 11848270Abstract: A chip structure is provided. The chip structure includes a substrate. The chip structure includes a redistribution layer over the substrate. The chip structure includes a bonding pad over the redistribution layer. The chip structure includes a shielding pad over the redistribution layer and surrounding the bonding pad. The chip structure includes an insulating layer over the redistribution layer and the shielding pad. The chip structure includes a bump over the bonding pad and the insulating layer. A sidewall of the bump is over the shielding pad.Type: GrantFiled: May 25, 2019Date of Patent: December 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hong-Seng Shue, Sheng-Han Tsai, Kuo-Chin Chang, Mirng-Ji Lii, Kuo-Ching Hsu
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Patent number: 11842935Abstract: A method includes forming a reconstructed package substrate, which includes placing a plurality of substrate blocks over a carrier, encapsulating the plurality of substrate blocks in an encapsulant, planarizing the encapsulant and the plurality of substrate blocks to reveal redistribution lines in the plurality of substrate blocks, and forming a redistribution structure overlapping both of the plurality of substrate blocks and encapsulant. A package component is bonded over the reconstructed package substrate.Type: GrantFiled: May 12, 2021Date of Patent: December 12, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen-Shien Chen, Kuo-Ching Hsu, Wei-Hung Lin, Hui-Min Huang, Ming-Da Cheng, Mirng-Ji Lii
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Patent number: 11824026Abstract: Connector structures and methods of forming the same are provided. A method includes forming a first patterned passivation layer on a workpiece, the first patterned passivation layer having a first opening exposing a conductive feature of the workpiece. A seed layer is formed over the first patterned passivation layer and in the first opening. A patterned mask layer is formed over the seed layer, the patterned mask layer having a second opening exposing the seed layer, the second opening overlapping with the first opening. A connector is formed in the second opening. The patterned mask layer is partially removed, an unremoved portion of the patterned mask layer remaining in the first opening. The seed layer is patterned using the unremoved portion of the patterned mask layer as a mask.Type: GrantFiled: December 7, 2020Date of Patent: November 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chen-Shien Chen, Sheng-Yu Wu, Mirng-Ji Lii, Chita Chuang
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Publication number: 20230369049Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.Type: ApplicationFiled: July 11, 2023Publication date: November 16, 2023Inventors: Chang-Jung Hsueh, Chen-En Yen, Chin Wei Kang, Kai Jun Zhan, Wei-Hung Lin, Cheng Jen Lin, Ming-Da Cheng, Ching-Hui Chen, Mirng-Ji Lii
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Publication number: 20230368972Abstract: A system and method for providing and programming a programmable inductor is provided. The structure of the programmable inductor includes multiple turns, with programmable interconnects incorporated at various points around the turns to provide a desired isolation of the turns during programming. In an embodiment the programming may be controlled using the size of the vias, the number of vias, or the shapes of the interconnects.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Chen-Hua Yu, Mirng-Ji Lii, Hao-Yi Tsai, Hsien-Wei Chen, Hung-Yi Kuo, Nien-Fang Wu