Abstract: A method of forming a heat spreader on a printed circuit board (PCB), having a power dissipating component operably coupled thereto, includes attaching a thermally and electrically conductive structure, to a first side of the PCB to define a first PCB region that includes the component and a second PCB region without. The underside of the component is underfilled to electrically insulate its solder contacts. A first protective layer is applied to the second region of the PCB. A conductive plating membrane is deposited to the first region, the second region, and to the structure. A second protective layer is applied over a portion of the conductive plating membrane that overlays the second region, leaving exposed the rest of the conductive plating membrane. An electrically and thermally conductive layer is electroplated over the exposed areas of the conductive plating membrane, to form a heat exchanger within the first region.

Abstract: A method of forming a heat spreader on a printed circuit board (PCB), having a power dissipating component operably coupled thereto, includes attaching a thermally and electrically conductive structure, to a first side of the PCB to define a first PCB region that includes the component and a second PCB region without. The underside of the component is underfilled to electrically insulate its solder contacts. A first protective layer is applied to the second region of the PCB. A conductive plating membrane is deposited to the first region, the second region, and to the structure. A second protective layer is applied over a portion of the conductive plating membrane that overlays the second region, leaving exposed the rest of the conductive plating membrane. An electrically and thermally conductive layer is electroplated over the exposed areas of the conductive plating membrane, to form a heat exchanger within the first region.

Abstract: An Array Core Block for an AESA includes a stack of 2*M alternating N-channel RFIC and MMIC Power Amplifier wafers bonded together by a wafer-scale direct bond hybrid (DBH) interconnect process. This process forms both metal-to-metal and dielectric hydrogen bonds between bonding surfaces to seal the wafer stack. Each array core block includes an array of through substrate metal vias to distribute DC bias, LO and information signals. Each array core block also includes a cooling system including micro-channels formed on a backside of at least one of the chips in each bonded pair and through substrate via holes formed through the stack that operatively couple the micro-channels for all of the bonded pairs to receive and circulate a fluid through the micro-channels and through substrate via holes to cool the RFIC and MMIC Power Amplifier chips and to extract the heated fluid.

Abstract: A dual-band MMIC power amplifier and method of operation to amplify frequencies in different RF bands while only requiring input drive signals at frequencies f1 and f2 in a narrow RF input band. This allows for the use of a conventional narrowband RF IC to drive the MMIC and does not require additional circuitry (e.g., a LO) on the MMIC power amplifier. The matching network of the last amplification stage is modified to pass f1 (or a harmonic thereof), reflect f2, pass a Pth harmonic of f2 where P is 2 or 3 and to reflect any unused 1st, 2nd or 3rd order harmonics of f1 or f2 back into the MMIC. In response to an input signal at f1, the MMIC power amplifier amplifies and outputs a signal at f1 (or a harmonic thereof). In response to an input signal at f2 at sufficient RF power, the last amplification stage operates in compression such that the MMIC power amplifier generates the harmonics, selects the Pth harmonic and outputs an amplified RF signal at P*f2.

Abstract: Methods and apparatus to provide a rectangular N×M antenna element subarray block having opposed first and second major surfaces and first and second ends at opposite ends of the block, wherein the antenna elements are located at the first end of the block. A coldplate between the first inlet connector and the first outlet connector enables flow of the liquid coolant from the first inlet connector to the first outlet connector. The first inlet connector is configured to enable flow of the liquid coolant into the system in a direction that is normal to the first major surface of the block.

Abstract: Methods and apparatus to provide a rectangular N×M antenna element subarray block having opposed first and second major surfaces and first and second ends at opposite ends of the block, wherein the antenna elements are located at the first end of the block. A coldplate between the first inlet connector and the first outlet connector enables flow of the liquid coolant from the first inlet connector to the first outlet connector. The first inlet connector is configured to enable flow of the liquid coolant into the system in a direction that is normal to the first major surface of the block.

Abstract: A recursive metal-embedded chip assembly (R-MECA) process and method is described for heterogeneous integration of multiple die from diverse device technologies. The recursive aspect of this integration technology enables integration of increasingly-complex subsystems while bridging different scales for devices, interconnects and components. Additionally, the proposed concepts include high thermal management performance that is maintained through the multiple recursive levels of R-MECA, which is a key requirement for high-performance heterogeneous integration of digital, analog mixed signal and RF subsystems. At the wafer-scale, chips from diverse technologies and different thicknesses are initially embedded in a metal heat spreader surrounded by a mesh wafer host. An embodiment uses metal embedding on the backside of the chips as a key differentiator for high-density integration, and built-in thermal management.

Abstract: A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate.

Abstract: Methods using chemical vapor deposition (CVD) of diamond deposited on a sacrificial material provide CVD diamond microchannel structures and 3-D interconnection structures of CVD diamond microfluidic channels. The sacrificial material is patterned to define locations and dimensions of the microchannels. The patterned sacrificial material is selectively removed from underneath the chemical vapor deposited (CVD) diamond to form the CVD diamond microchannels. The CVD diamond microchannels are integrated with electronic structures to provide an integral microfluidic cooling system to electronic devices.

Abstract: Semiconductor devices, such as transistors, FETs and HEMTs having a non-linear gate foot region and non-linear channel width are disclosed as well as methods of making and using such devices and the operational benefits of the devices.

Abstract: A method of mounting one or more semiconductor or microelectronic chips, which includes providing a carrier; temporarily adhering the one or more semiconductor or microelectronic chips to the carrier with active faces of the one or more chips facing towards the carrier; providing a package body with at least one chip-receiving opening therein and with at least one contact opening therein; temporarily adhering the package body to the carrier with the at least one opening in the package body accommodating at least a portion of the one or more chips; covering backsides of the one or more chips and filling empty spaces between the one or more chips and walls of the at least one opening in the package body with a metallic material; filling the at least one contact opening with the aforementioned metallic material; wirebonding contacts on the active faces of the one or more chips with contact surfaces in electrical communication with the metallic material in the at least one contact opening; and releasing package b

Abstract: A recursive metal-embedded chip assembly (R-MECA) process and method is described for heterogeneous integration of multiple die from diverse device technologies. The recursive aspect of this integration technology enables integration of increasingly-complex subsystems while bridging different scales for devices, interconnects and components. Additionally, the proposed concepts include high thermal management performance that is maintained through the multiple recursive levels of R-MECA, which is a key requirement for high-performance heterogeneous integration of digital, analog mixed signal and RF subsystems. At the wafer-scale, chips from diverse technologies and different thicknesses are initially embedded in a metal heat spreader surrounded by a mesh wafer host. An embodiment uses metal embedding on the backside of the chips as a key differentiator for high-density integration, and built-in thermal management.

Abstract: A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate.

Abstract: A method of making a stepped field gate for an FET including forming a first passivation layer on a barrier layer, defining a first field plate by using electron beam (EB) lithography and by depositing a first negative EB resist, forming a second passivation layer over first negative EB resist and the first passivation layer, planarizing the first negative EB resist and the second passivation layer, defining a second field plate by using EB lithography and by depositing a second negative EB resist connected to the first negative EB resist, forming a third passivation layer over second negative EB resist and the second passivation layer, planarizing the second negative EB resist and the third passivation layer, removing the first and second negative EB resist, and forming a stepped field gate by using lithography and plating in a void left by the removed first and second negative EB resist.

Abstract: There is provided an integrated RF subsystem including a chip substrate, a circuit patterned on a first surface of the chip substrate, a probe electrically integrated with the circuit on a first side of the chip substrate, a frame at a second side of the chip substrate defining a first cavity underneath the circuit.

Abstract: An interconnect for electrically coupling pads formed on adjacent chips or on packaging material adjacent the chips, with an electrically conductive heat sink being disposed between the pads, the interconnect comprising a metallic membrane layer disposed between two adjacent pads and disposed or bridging over the electrically conductive heat sink so as to avoid making electrical contact with the electrically conductive heat sink. An electroplated metallic layer is disposed on the metallic membrane layer. Fabrication of interconnect permits multiple interconnects to be formed in parallel using fabrication techniques compatible with wafer level fabrication of the interconnects. The interconnects preferably follow a smooth curve to electrically connect adjacent pads and following that smooth curve they bridge over the intervening electrically conductive heat sink material in a predictable fashion.

Abstract: A method of mounting a plurality of semiconductor or microelectronic chips or dies, the method including providing a carrier, temporarily adhering the plurality of semiconductor or microelectronic chips or dies to the carrier with active faces of the chips or dies facing towards the carrier, covering backsides of the chips and filling empty spaces between the chips or dies with a metallic material to thereby define an assembly of the chips or dies and the metallic material, and releasing the assembly from the carrier, wherein each chip or die comprises at least one bonding ring higher than a height of the active face of the respective chip or die or any connections on the active face of the respective chip or die.

Abstract: A method of forming an E-plane probe includes forming a plurality of monolithically integrated circuits (MICs) on a wafer, each MIC including a monolithic microwave integrated circuit (MMIC), and an E-plane probe coupled to the MMIC, mounting the wafer on an ultra-violet (UV) tape, cutting the wafer with a laser at a first power and a first linear cutting speed along vertical streets and then along horizontal streets to form separate substrates, cutting with the laser at a second power and a second linear cutting speed a rectangle or a portion of a rectangle from the separate substrates to form narrow substrate extensions on the substrates, and repeating this step for each rectangle or portion of a rectangle to be cut to form substrate extensions, and curing the UV tape, wherein the E-plane probes are on the narrow substrate extensions.

Abstract: A device and a method of making said wherein the device wherein the device has a group III-nitride buffer deposited on a substrate; and a group III-nitride heterostructure disposed on a surface of the group III-nitride buffer, wherein the group III-nitride heterostructure has a group III-nitride channel and a group III-nitride barrier layer disposed on a surface of the group III-nitride channel, the group III-nitride barrier layer including Al as one of its constituent group III elements, the Al having a mole fraction which varies at least throughout a portion of said group III-nitride barrier layer.

Abstract: Apparatus and methods are provided for heat removal and spreading from a field effect transistor (FET) including a substrate, a first source, a first gate, and a drain on the substrate, and a poly-diamond dielectric thermally coupled to the first gate wherein the poly-diamond dielectric facilitates heat removal from a top of the FET.