Abstract: Provided is a semiconductor device including transistor regions and diode regions each extending from a given one edge of an active region to a different edge of the active region, a first-conductivity-type pad well region in contact with a gate runner region shaped like a rectangular ring and provided within the gate runner region, and first-conductivity-type collector regions provided in the transistor regions in a one-to-one correspondence and second-conductivity-type cathode regions provided in the diode regions in a one-to-one correspondence. Here, an edge of the pad well region at which the pad well region ends in an arranging direction extends in an extending direction, and the arranging direction is orthogonal to the extending direction in which the transistor regions and the diode regions extend, and any one or more of the collector regions are positioned below the edge of the pad well region.

Abstract: A semiconductor device is provided, including a semiconductor substrate, wherein the semiconductor substrate has: a diode region; a transistor region; and a boundary region that is positioned between the diode region and the transistor region, the boundary region includes a defect region that is provided: at a predetermined depth position on a front surface-side of the semiconductor substrate; and to extend from an end portion of the boundary region adjacent to the diode region toward the transistor region, at least part of the boundary region does not include a first conductivity-type emitter region exposed on a front surface of the semiconductor substrate, and the transistor region does not have the defect region below a mesa portion that is sandwiched by two adjacent trench portions, and closest to the boundary region among the mesa portions having the emitter region.

Abstract: To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion. The semiconductor device having a transistor portion and a diode portion, the semiconductor device includes: a drift region of a first conductivity type provided on a semiconductor substrate, a first well region of a second conductivity type provided on an upper surface side of the semiconductor substrate, an anode region of the second conductivity provided on the upper surface side of the semiconductor substrate, in the diode portion, and a first high concentration region of a second conductivity type which is provided in contact with a first well region between the anode region and the first well region, and has a higher doping concentration than the anode region.

Abstract: Provided is a semiconductor device including transistor regions and diode regions each extending from a given one edge of an active region to a different edge of the active region, a first-conductivity-type pad well region in contact with a gate runner region shaped like a rectangular ring and provided within the gate runner region, and first-conductivity-type collector regions provided in the transistor regions in a one-to-one correspondence and second-conductivity-type cathode regions provided in the diode regions in a one-to-one correspondence. Here, an edge of the pad well region at which the pad well region ends in an arranging direction extends in an extending direction, and the arranging direction is orthogonal to the extending direction in which the transistor regions and the diode regions extend, and any one or more of the collector regions are positioned below the edge of the pad well region.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of first trench portions formed at a front surface side of the semiconductor substrate and extending in a predetermined extending direction in a planar view; an emitter region of a first conductivity type formed between adjacent trenches of the plurality of first trench portions at the front surface side of the semiconductor substrate; a first contact region of a second conductivity type formed between the adjacent trenches of the plurality of first trench portions, the first contact region and the emitter region being arranged alternately in the extending direction; and a second contact region of a second conductivity type formed above the first contact region to be apart from the emitter region and having a higher doping concentration than the first contact region.

Abstract: A semiconductor device including a semiconductor substrate and a plurality of trench structures formed on the semiconductor substrate. The semiconductor substrate includes a first element region for forming an insulated gate bipolar transistor therein, and a second element region for forming a diode therein, the semiconductor substrate constituting a drift layer. The plurality of trench structures includes a plurality of gate trench structures provided on a front surface side of the first element region, each gate trench structure having an electrode provided therein that is based on a gate potential, and a plurality of floating trench structures provided on a front surface side of the second element region, each floating trench structure having an electrode provided therein that has a floating potential.

Abstract: A semiconductor device includes an IGBT region and a FWD region. The IGBT region includes a plurality of trench structures, p-type base regions provided between the trench structures, n+ emitter regions provided on the p-type base regions, an interlayer insulating film provided on the n+ emitter regions and containing contact holes therein, and an emitter electrode connected to the n+ emitter regions through the contact holes. In a portion of the IGBT region that abuts the FWD region, the interlayer insulating film covers and insulates the trench structures without having the contact holes.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.

Abstract: To improve withstand capability of a semiconductor device during reverse recovery, provided is a semiconductor device including a semiconductor substrate having a first conduction type; a first region having a second conduction type that is formed in a front surface of the semiconductor substrate; a second region having a second conduction type that is formed adjacent to the first region in the front surface of the semiconductor substrate and has a higher concentration than the first region; a third region having a second conduction type that is formed adjacent to the second region in the front surface of the semiconductor substrate and has a higher concentration than the second region; an insulating film that covers a portion of the second region and the third region; and an electrode connected to the second region and the first region that are not covered by the insulating film.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of first trench portions formed at a front surface side of the semiconductor substrate and extending in a predetermined extending direction in a planar view; an emitter region of a first conductivity type formed between adjacent trenches of the plurality of first trench portions at the front surface side of the semiconductor substrate; a first contact region of a second conductivity type formed between the adjacent trenches of the plurality of first trench portions, the first contact region and the emitter region being arranged alternately in the extending direction; and a second contact region of a second conductivity type formed above the first contact region to be apart from the emitter region and having a higher doping concentration than the first contact region.

Abstract: To improve withstand capability of a semiconductor device during reverse recovery, provided is a semiconductor device including a semiconductor substrate having a first conduction type; a first region having a second conduction type that is formed in a front surface of the semiconductor substrate; a second region having a second conduction type that is formed adjacent to the first region in the front surface of the semiconductor substrate and has a higher concentration than the first region; a third region having a second conduction type that is formed adjacent to the second region in the front surface of the semiconductor substrate and has a higher concentration than the second region; an insulating film that covers a portion of the second region and the third region; and an electrode connected to the second region and the first region that are not covered by the insulating film.

Abstract: A display-screen-data editing apparatus including: a storing unit that stores therein a variable table in which a device and a comment for the device are associated with each other; a table generating unit that generates a history table by analyzing screen data and furthermore generating a history-inclusive variable table by combining the variable table and the history table; and a search processing unit that performs a search process on a device and a comment in the history-inclusive variable table on a basis of a character string input to one of a device input field and a comment input field and displays extracted device or comment as a list, wherein a device or a comment that is selected from the displayed list is input to the device input field and the comment input field.

Abstract: A display-screen-data editing apparatus including: a storing unit that stores therein a variable table in which a device and a comment for the device are associated with each other; a table generating unit that generates a history table by analyzing screen data and furthermore generating a history-inclusive variable table by combining the variable table and the history table; and a search processing unit that performs a search process on a device and a comment in the history-inclusive variable table on a basis of a character string input to one of a device input field and a comment input field and displays extracted device or comment as a list, wherein a device or a comment that is selected from the displayed list is input to the device input field and the comment input field.