Abstract: A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

Abstract: An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

Abstract: An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

Abstract: There is provided an electrolytic processing device including: a processing electrode brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of the spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section for supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.

Abstract: There is provided an electrolytic processing device including: a processing electrode brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of the spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section or supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.

Abstract: A semiconductor substrate cleaning apparatus and method are capable of efficiently removing contamination from both the obverse and reverse sides of a semiconductor substrate. A single cleaning liquid supply nozzle for supplying a cleaning liquid to both the obverse and reverse sides of a semiconductor substrate to be cleaned is placed at a distance from the outer peripheral edge of the substrate. An ultrasonic vibrator applies ultrasonic waves to both the obverse and reverse sides of the substrate. Four driving rollers are disposed in contact with the outer peripheral edge of the substrate. The driving rollers are adapte to rotate while being engaged with the outer peripheral edge of the substrate thereby drivingly rotating the substrate.

Abstract: A substrate processing apparatus comprises roll chucks for holding and rotating a substrate, a closable chamber housing the roll chucks therein, and a gas introduction pipe for introducing a gas into the chamber. The substrate processing apparatus further comprises an etching unit for etching and cleaning a peripheral portion of the substrate while the substrate is being rotated by the roll chucks, and a first supply passage for supplying a first liquid to the etching unit.

Abstract: A cleaning apparatus comprises a holder for holding a substrate such as a semiconductor wafer horizontally and rotating the substrate about its central axis, while conducting a cleaning operation of the substrate by supplying a cleaning liquid thereto. The apparatus further comprises a cleaning vessel including a side wall encircling the substrate rotated by the holder to intercept the cleaning liquid supplied to and scattered from the rotating substrate and then finally drain the cleaning liquid. There is provided a vent duct for carrying gas from the inside of the cleaning vessel to the outside of the same. The vent duct includes an inlet provided at substantially the same level as that of the substrate for introducing the gas into the vent duct.

Abstract: An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

Abstract: An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

Abstract: An electrochemical machining apparatus comprises a machining chamber for holding ultrapure water, a cathode/anode immersed in the ultrapure water held in the machining chamber, and a workpiece holding portion for holding a workpiece at a predetermined distance from the cathode/anode so that a surface, to be machined, of the workpiece is brought into contact with the ultrapure waters The electrochemical machining apparatus further comprises an anode/cathode contact brought into contact with the workpiece held by the workpiece holding portion so that the workpiece serves as an anode/cathode, a catalyst having a strongly basic anion exchange function or a strongly acidic cation exchange function, a power source for applying a voltage between the cathode/anode and the workpiece, and a moving mechanism for relatively moving the workpiece and the catalyst. The catalyst is disposed between the cathode/anode and the workpiece held by the workpiece holding portion.

Abstract: To realize a substrate cleaning method which enables effective cleaning of a wafer having a recess thereon without causing any increase in cleaning cost. Ozone gas and ammonia water are supplied right above a wafer 7 having a recess thereon, a gas-dissolving liquid is produced by dissolving the ozone gas in the ammonia water, and the gas-dissolving liquid is used to carry out contact and non-contact types physical cleaning on the wafer.

Abstract: A cleaning apparatus is suitable for cleaning workpieces that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The cleaning apparatus has a holding device for holding the substrate and a cleaning unit capable of slidably contacting the surface of the substrate. The cleaning unit has a nozzle for ejecting high-pressure cleaning liquid onto the substrate, and a cleaning member surrounding the nozzle.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the workpiece and pressing the workpiece against the polishing surface of the polishing table to thereby polish a surface of the workpiece, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the workpiece.

Abstract: The present invention relates to a substrate cleaning apparatus, and more particularly to a substrate cleaning apparatus suitable for cleaning a substrate which requires a high level of cleanliness, such as a semiconductor wafer, a glass substrate, a liquid crystal panel, etc.