Abstract: The present invention provides a photoresist composition comprising a resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.

Abstract: A photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1 represents a C2-C12 alkyl group which can have one or more hydroxyl groups, etc., R2 and R3 each independently represent a hydrogen atom, etc., R4, R5 and R6 each independently represent a hydrogen atom, etc., A1 represents a single bond or a C1-C2 alkylene group in which one or more —CH2— can be replaced by —O—.

Abstract: The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): wherein Rc1 represents an aromatic group which can have one or more substituents, Rc2 and Rc3 independently each represent a hydrogen atom, an aliphatic hydrocarbon group which can have one or more substituents or an aromatic group which can have one or more substituents, Rc4 and Rc6 independently each represent a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc4 and Rc6 are bonded each other to form an alkanediyl group, Rc5 represents an aliphatic hydrocarbon group which can have one or more substituents or an amino group which can have one or two substituents, Rc7 represents a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc5 and Rc7 are bonded each other to form an alkanediyl group.

Abstract: A compounds represented by the Formula (I) or the Formula (I?). wherein Z1 and Z2 independently represent a hydrogen atom, a C1 to C12 alkyl group or a C3 to C12 cyclic saturated hydrocarbon group, provided that at least one of Z1 and Z2 represent a C1 to C12 alkyl group or a C3 to C12 cyclic saturated hydrocarbon group; rings Y1 and Y2 independently represents an optionally substituted C3 to C20 alicyclic hydrocarbon group; Q1 to Q4 and Q?1 to Q?4 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group; and m and n independently represent an integer of 0 to 5.

Abstract: The present invention provides a compound represented by the formula (C1): wherein Rc2 represents a C6-C10 aromatic hydrocarbon group having at least one nitro group and Rc1 represents a group represented by the formula (1): wherein Rc4 represents a hydrogen atom etc., Rc5 represents a C1-C30 divalent hydrocarbon group, and Rc3 represents a group represented by the formula (3-1), (3-2) or (3-3): wherein Rc6, Rc7, Rc8, Rc9, Rc10, Rc11, Rc12, Rc13 and Rc14 each independently represent a C1-C30 hydrocarbon group, and a photoresist composition comprising a resin, an acid generator and the compound represented by the formula (C1).

Abstract: The present invention provides a photoresist composition comprising a resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.

Abstract: A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). wherein X1 represents a hydrogen atom, a C1 to C4 alkyl group, etc., Y in each occurrence independently represent a hydrogen atom or an alkyl group, and n is an integer of 1 to 14, R1 to R4 independently represent a hydrogen atom, an alkyl group, etc., and A+ represents an organic counterion, E? represents CF3SO3—, C2F5SO3—, C4F9SO3—, etc., Y1 and Y2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group.

Abstract: A polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., n? represents an integer of 0 to 12, Z2 represents a single bond etc., k? represents an integer of 1 to 4, R21 and R22 each independently represents a hydrogen atom etc.

Abstract: A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.

Abstract: A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.

Abstract: Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Abstract: The present invention provides a polymer containing a structural unit represented by the formula (Ia) or (Ib): wherein R1, R2, R3, n, Z1, R4, R5 and m are defined in the specification, a structural unit represented by the formula (II): wherein R6, R7, R8, R9, Z2, n? and Z? are defined in the specification, and a structural unit represented by the formula (III): wherein R10, R11, 1? and Z3 are defined in the specification.

Abstract: A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a secon

Abstract: Process for producing a photoresist pattern containing the steps: (A) applying a first photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain, an acid generator and a cross-linking agent on a substrate to form a first photoresist film, exposing the film to radiation followed by developing the film, to form a first photoresist pattern; (B) making the first photoresist pattern inactive to radiation, insoluble in an alkaline developer or insoluble in a second photoresist composition in step (C); (C) applying a second photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain and at least one acid generator of formula (I) or (II) defined in the specification, on the first photoresist pattern, to form a second photoresist film, exposing the film to radiation; and (D) developing the exposed film, to form a second photoresist pattern.

Abstract: The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): wherein Rc1 represents an aromatic group which can have one or more substituents, Rc2 and Rc3 independently each represent a hydrogen atom, an aliphatic hydrocarbon group which can have one or more substituents or an aromatic group which can have one or more substituents, Rc4 and RC6 independently each represent a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc4 and Rc6 are bonded each other to form an alkanediyl group, Rc5 represents an aliphatic hydrocarbon group which can have one or more substituents or an amino group which can have one or two substituents, Rc7 represents a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc5 and Rc7 are bonded each other to form an alkanediyl group.

Abstract: The present invention provides a process for producing a photoresist pattern comprising the following steps (1) to (11): (1) a step of applying the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, and an acid generator, on a substrate followed by conducting drying, thereby forming the first photoresist film, (2) a step of prebaking the first photoresist film, (3) a step of exposing the prebaked first photoresist film to radiation, (4) a step of baking the exposed first photoresist film, (5) a step of developing the baked first photoresist film with the first alkaline developer, thereby forming the first photoresist pattern, (6) a step of forming a coating layer on the first photoresist pattern, (7) a step of applying the second photoresist composition on the coating layer followed by

Abstract: A resist processing method has: (1) a step of applying a first resist composition comprising a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through an action of an acid, a photo acid generator (B) and a cross-linking agent (C) to obtain a first resist film; (2) a step of prebaking the first resist film; (3) a step of exposure processing the first resist film; (4) a step of post-exposure baking the first resist film; (5) a step of developing with a first alkali developer to obtain a first resist pattern; (6) a step of hard-baking by maintaining the first resist pattern at a temperature which is lower than a glass transition temperature of the above-mentioned first resist composition for a predetermined period of time, and then maintaining the first resist pattern at a temperature which is the glass transition temperature of the first resist composition or higher for a predetermined period of time; (7)

Abstract: The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1, R2 and R3 each independently represent a hydrogen atom or a C1-C4 alkyl group, A1 represents a single bond or a C1-C2 alkylene group, R4 and R5 each independently represent a hydrogen atom or a C1-C2 alkyl group, R6 and R7 each independently represent a hydrogen atom etc.

Abstract: The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1 represents a C2-C12 alkyl group which can have one or more hydroxyl groups, etc., R2 and R3 each independently represent a hydrogen atom, etc., R4, R5 and R6 each independently represent a hydrogen atom, etc., A1 represents a single bond or a C1-C2 alkylene group in which one or more —CH2— can be replaced by —O—.

Abstract: The present invention provides a compound represented by the formula (C1): wherein Rc2 represents a C6-C10 aromatic hydrocarbon group having at least one nitro group and Rc1 represents a group represented by the formula (1): wherein Rc4 represents a hydrogen atom etc., Rc5 represents a C1-C30 divalent hydrocarbon group, and Rc3 represents a group represented by the formula (3-1), (3-2) or (3-3): wherein Rc6, Rc7, Rc8, Rc9, Rc10, Rc11, Rc12, Rc13 and Rc14 each independently represent a C1-C30 hydrocarbon group, and a photoresist composition comprising a resin, an acid generator and the compound represented by the formula (C1).